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16 Apr 2001

Volume 78, Issue 16, pp. 2267-2404

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Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Myoung Hee Lee, Kwang Joo Kim, and Eunsoon Oh

Appl. Phys. Lett. 78, 2366 (2001); http://dx.doi.org/10.1063/1.1355987 (3 pages) | Cited 5 times

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The evolution of the optical absorption and emission properties of strained Ga1−xInxN/GaN double quantum wells grown on (0001)-oriented sapphire substrates with varying well width has been investigated by spectroscopic ellipsometry (SE) and photoluminescence (PL). The SE result shows that the band-gap absorption energy of the wells shifts to higher energies as the well width decreases, indicating a quantum-confinement effect. The decreasing trend agrees with the result of one-dimensional square-well potential calculations. The PL result shows a Stokes shift of the emission edge from the corresponding absorption edge, attributable to the combined effects of the strain-induced piezoelectric potential and the In-fluctuation potential in the well. The blueshift of the emission edge with increasing PL excitation density further supports the existence of a strong piezoelectric field in the well. © 2001 American Institute of Physics.
Show PACS
78.67.De Quantum wells
78.55.Cr III-V semiconductors
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.40.Fy Semiconductors
81.07.St Quantum wells
81.05.Ea III-V semiconductors
77.65.Ly Strain-induced piezoelectric fields

Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

Takeyoshi Sugaya, Mutsuo Ogura, Yoshinobu Sugiyama, Kazuyuki Matsumoto, Kenji Yonei, and Kee-Youn Jang

Appl. Phys. Lett. 78, 2369 (2001); http://dx.doi.org/10.1063/1.1365947 (3 pages) | Cited 7 times

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A trench-type narrow InGaAs quantum-wire field-effect transistor (QWR–FET) with a cross section of 8×25 nm has been fabricated on a (311)A InP V-grooved substrate by molecular-beam epitaxy. The trench-type InGaAs QWR–FET has normal static characteristics at room temperature, and demonstrates clear negative differential resistance characteristics at 40 K with a high peak-to-valley current ratio (PVR=4.3) and a low onset voltage of 0.12 V. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Fq High-field and nonlinear effects
73.63.Nm Quantum wires
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Tv Field effect devices

Excellent electric properties of free-standing InAs membranes

Hiroshi Yamaguchi, Remi Dreyfus, Yoshiro Hirayama, and Sen Miyashita

Appl. Phys. Lett. 78, 2372 (2001); http://dx.doi.org/10.1063/1.1365946 (3 pages) | Cited 17 times

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We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Growth and control of nanoprotrusions on iridium field emitters

Babu R. Chalamala, Robert H. Reuss, and Kenneth A. Dean

Appl. Phys. Lett. 78, 2375 (2001); http://dx.doi.org/10.1063/1.1364662 (3 pages) | Cited 6 times

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We report on the direct observation of the growth of nanoprotrusions on iridium field-emission tips. For clean, protrusion-free field emitters, the field emission originated from crystal planes with low-work-function values. However, with continuous operation, we observed the growth of nanoprotrusions on crystalline planes where there was initially no detectable emission. The protrusions were estimated to be approximately 2–3 nm in diameter and 5–15 nm in height. Protrusion growth led to an increase in field-emission current by several orders of magnitude. However, the tips were destroyed when operated with sustained emission current values greater than 10 μA. We found that stable operation and control of protrusion growth can be achieved by either progressively reducing the anode voltage or by adding a series resistor. © 2001 American Institute of Physics.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
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