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23 Apr 2001

Volume 78, Issue 17, pp. 2417-2603

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Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes

R. Magno, B. D. Weaver, A. S. Bracker, and B. R. Bennett

Appl. Phys. Lett. 78, 2581 (2001); http://dx.doi.org/10.1063/1.1363697 (3 pages) | Cited 3 times

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Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. Ip increased <50% while a large increase in the valley current decreased the P/V ratios to about 2. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes

F. Pschenitzka and J. C. Sturm

Appl. Phys. Lett. 78, 2584 (2001); http://dx.doi.org/10.1063/1.1366368 (3 pages) | Cited 6 times

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A method of solvent-enhanced dye diffusion in polymer films for organic light-emitting diode (OLED) application is introduced. After an initial dye transfer from a dye source substrate into the top of the device polymer film, the device substrate is then exposed to solvent vapor. Due to solvent absorption by the polymer film, the glass transition temperature of the polymer is significantly decreased which leads to enhanced diffusion of the dye in the polymer film. Secondary ion mass spectroscopy and depth dependent photoluminescence show that the temperature for dye diffusion can be decreased by at least 100 °C, to room temperature. OLEDs with 0.6% external quantum efficiency have been demonstrated with this method using the polymer poly(9-vinylcarbazole) combined with electron transport molecules and the dyes coumarin 47 and coumarin 6. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.55.Kz Solid organic materials
66.30.J- Diffusion of impurities

Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias

Jian-Qiang Lü and Michael S. Shur

Appl. Phys. Lett. 78, 2587 (2001); http://dx.doi.org/10.1063/1.1367289 (2 pages) | Cited 30 times

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We report on a regime of operation of high-electron-mobility-transistor (HEMT) terahertz detectors, in which we apply a constant drain bias. The drain bias dependence of the gate-to-source and gate-to-drain capacitances results in a much greater asymmetry in the boundary conditions for plasma waves and greatly enhances the HEMT detector responsivity. The measured responsivity increases with the drain current by more than an order of magnitude and saturates at a saturation drain current for a given gate bias. These results confirm our model linking the responsivity increase to the drain bias dependence of the HEMT capacitances. © 2001 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.Tv Field effect devices
85.60.Gz Photodetectors (including infrared and CCD detectors)
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