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23 Apr 2001

Volume 78, Issue 17, pp. 2417-2603

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Dielectric properties of strained (Ba, Sr)TiO3 thin films epitaxially grown on Si with thin yttria-stabilized zirconia buffer layer

Sungjin Jun, Young Sung Kim, Jaichan Lee, and Young Woon Kim

Appl. Phys. Lett. 78, 2542 (2001); http://dx.doi.org/10.1063/1.1367309 (3 pages) | Cited 27 times

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We have grown epitaxial (Ba0.5, Sr0.5)TiO3 (BST) thin films on Si with very thin yttria-stabilized zirconia (YSZ) buffer layer. The thin YSZ buffer layer affects the stress state of the epitaxial BST layer as well as the growth behavior of the BST layer, i.e., the degree of epitaxy. The epitaxial BST films grown on Si are in two-dimensional tensile stress. We have found that the dielectric constant of the BST films increased with decreasing the lattice distortion in the state of tensile stress. The dielectric constant of the BST films reaches 1300 when the lattice distortion (surface normal lattice constant/in-plane lattice constant) is 0.993. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology

Dielectric properties of La3Ga5SiO14 at microwave frequencies between 10 and 400 K

Vincent Giordano, Yann Kersalé, and Jean-Jacques Boy

Appl. Phys. Lett. 78, 2545 (2001); http://dx.doi.org/10.1063/1.1365415 (3 pages) | Cited 2 times

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We report measurements of dielectric permittivity and dielectric losses at microwave frequencies of lanthanum gallium silicate as a function of temperature. The dielectric rod resonator method was used to evaluate the two relative permittivity tensor components ϵt and ϵz of this uniaxial dielectric crystal. Between 10 and 400 K, ϵt varies from 18.92 to 19.65 whereas ϵz ranges from 60.81 to 46.66. Around 300 K, the temperature coefficients of ϵt and ϵz have opposite signs and are equal to 130 and −720 ppm/K, respectively. This characteristic enables one to design a self-compensated microwave resonator presenting a low frequency temperature sensitivity. For the measured dielectric sample the dielectric losses range from 1×10−4 to 5×10−6 between 300 and 20 K and are actually limited by the crystal quality. © 2001 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
84.30.Ng Oscillators, pulse generators, and function generators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors

X. J. Meng, J. L. Sun, J. Yu, L. X. Bo, C. P. Jiang, Q. Sun, S. L. Guo, and J. H. Chu

Appl. Phys. Lett. 78, 2548 (2001); http://dx.doi.org/10.1063/1.1367301 (3 pages) | Cited 7 times

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From the capacitance–voltage dependence of Pt/PbZr0.5Ti0.5O3/Pt capacitors, we mathematically separated the capacitance into two parts corresponding to two regions of the samples, the uniform electric-field region and the nonuniform region. They are correlated with the bulk ferroelectric film region and the Pt/PbZr0.5Ti0.5O3 Schottky barrier interface region, respectively. The calculations based on the in-series capacitor model show a slight decrease of dielectric permitivity for the fatigued bulk films. By assuming a much smaller dielectric permitivity of the interface region than that of bulk films, it was found that the interface capacitance decreased remarkably compared with that of the bulk ferroelectric film after fatigue. This decrease was attributed to the lowering of ferroelectricity in the interface layer, which suggests that the fatigue is mainly an interface state controlled process. The asymmetricity in the interface capacitance–voltage curve is attributed to the different defect concentration levels in the top and bottom interface regions. © 2001 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)

Piezoelectric properties of 〈001〉 textured Pb(Mg1/3Nb2/3)O3–PbTiO3 ceramics

E. M. Sabolsky, A. R. James, S. Kwon, S. Trolier-McKinstry, and G. L. Messing

Appl. Phys. Lett. 78, 2551 (2001); http://dx.doi.org/10.1063/1.1367291 (3 pages) | Cited 79 times

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The piezoelectric properties of (1−x) Pb(Mg1/3Nb2/3)O3–xPbTiO3 (x = 0.3–0.35), ceramics with a high degree of 〈001〉 fiber texture were investigated for possible actuator applications. Piezoelectric coefficients (d33) in excess of 1200 pC/N associated with strain levels up to >0.3% were observed in samples prepared by a reactive templated grain growth process. No excess PbO was used in the starting composition. A high degree of fiber texture was achieved using 〈001〉 oriented BaTiO3 template particles in a fine-grained precursor for the PMN–32PT matrix. High densities together with texture resulted in a significant increase in strain levels and d33 values compared to their polycrystalline counterparts. Peak dielectric constants on the order of 22 000 with losses of ∼2% and well-saturated hysteresis loops with a Pr ∼ 27 μC/cm2 were recorded on the textured samples. These domain engineered, textured ceramics have tremendous potential for high-performance actuators. © 2001 American Institute of Physics.
Show PACS
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Liquid-crystal display of stress fields in ferroelectrics

Doru C. Lupascu, Sergio L. dos Santos e Lucato, Jürgen Rödel, Markus Kreuzer, and Christopher S. Lynch

Appl. Phys. Lett. 78, 2554 (2001); http://dx.doi.org/10.1063/1.1365417 (3 pages) | Cited 4 times

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Direct optical images of local surface potentials generated by the process zone of a crack are shown for a thickness-poled ferroelectric ceramic using liquid crystals. The observed potentials can be mapped to stresses within the material revealing the complex shape and time development of the process zone so far not accessible using other techniques. © 2001 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
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