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23 Apr 2001

Volume 78, Issue 17, pp. 2417-2603

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Local plasmon photonic transistor

J. Tominaga, C. Mihalcea, D. Büchel, H. Fukuda, T. Nakano, N. Atoda, H. Fuji, and T. Kikukawa

Appl. Phys. Lett. 78, 2417 (2001); http://dx.doi.org/10.1063/1.1367905 (3 pages) | Cited 30 times

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A proposal for a photonic transistor is made and some basic proving experiments are described. These experiments show that by focusing two laser beams (405 and 635 nm) in one small spot on a high-speed rotating optical disk, a large signal enhancement is observed. It was found that a plasmon interaction generated between a silver light-scattering center and recorded small marks in the optical disk with a super-resolution near-field structure produced the large signal amplification in the spot (<1 μm). A modulated signal of the blue laser was enhanced by 60 times by controlling the red laser power from 1.5 to 3.5 mW. It has been shown that the system has the potential to realize all-thin-films photonic transistors by using local plasmon amplification. © 2001 American Institute of Physics.
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71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
72.30.+q High-frequency effects; plasma effects
42.82.Bq Design and performance testing of integrated-optical systems
73.50.Mx High-frequency effects; plasma effects

3.5 W frequency-doubled fiber-based laser source at 772 nm

P. A. Champert, S. V. Popov, and J. R. Taylor

Appl. Phys. Lett. 78, 2420 (2001); http://dx.doi.org/10.1063/1.1368181 (2 pages) | Cited 14 times

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A 3.5 W fiber-based laser source at 772 nm is demonstrated by using quasiphase-matched second-harmonic generation of a 40 dBm seeded ytterbium–erbium fiber amplifier in PPKTP. A 40% conversion efficiency is achieved across the entire output power range of the EDFA. No optical damage has been observed in the PPKTP over long-term high-power exposure. © 2001 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Asymmetric switching of antiferroelectric liquid-crystal cells

J. M. Otón, J. M. S. Pena, X. Quintana, J. L. Gayo, and V. Urruchi

Appl. Phys. Lett. 78, 2422 (2001); http://dx.doi.org/10.1063/1.1365945 (3 pages) | Cited 6 times

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Antiferroelectric liquid-crystal cells usually show symmetric electro-optic switching response from the antiferroelectric state to two opposite ferroelectric states. Intermediate transmission levels (analog gray scale) can be stabilized, applying a constant dc bias voltage after switching. Modifying the manufacturing process and using narrow dynamic-range antiferroelectric materials, a fully asymmetric response has been achieved. This asymmetric switching allows the antiferroelectric cell to be driven as a ferroelectric cell, reducing or eliminating the bias voltage, and ultimately leading to analog optical multistability, i.e., devices whose optical transmission may be arbitrarily set and maintained without power supply. © 2001 American Institute of Physics.
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42.70.Df Liquid crystals
78.20.Jq Electro-optical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals

Quasioptic dielectric tetrahertz cavity: Coupled through optical tunneling

Weili Zhang, Jiangquan Zhang, and D. Grischkowsky

Appl. Phys. Lett. 78, 2425 (2001); http://dx.doi.org/10.1063/1.1367901 (3 pages) | Cited 2 times

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We report the observation of the well defined oscillation of a picosecond tetrahertz (ps THz) pulse within a dielectric concentric cylindrical cavity, which is coupled to an incoming focused beam of ps THz pulses by the optical tunneling effect of frustrated total internal reflection. The tunneling barrier is an 18-μm-thick air slab, situated between the plane surfaces of a hyperhemicylindrical focusing lens and the cavity. The output of the quasioptic cavity consists of a train of ps THz pulses with a frequency spectrum from 0.1 to 1.0 THz. Good agreement between experiment and theory is obtained in both the time and frequency domains. © 2001 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
84.30.Ng Oscillators, pulse generators, and function generators
84.40.-x Radiowave and microwave (including millimeter wave) technology
73.40.Gk Tunneling
85.60.Bt Optoelectronic device characterization, design, and modeling

Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Shiang-Feng Tang, Shih-Yen Lin, and Si-Chen Lee

Appl. Phys. Lett. 78, 2428 (2001); http://dx.doi.org/10.1063/1.1362201 (3 pages) | Cited 64 times

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A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5–7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (⩾250 K) was demonstrated. The specific peak detectivity D∗ is 2.4×108 cm Hz1/2/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
73.63.Kv Quantum dots
78.67.Hc Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Optimization of elastomeric phase masks for near-field photolithography

Zhi-Yuan Li, Yadong Yin, and Younan Xia

Appl. Phys. Lett. 78, 2431 (2001); http://dx.doi.org/10.1063/1.1367898 (3 pages) | Cited 12 times

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Rigorous electromagnetic theory has been used to optimize elastomeric phase masks for generating sub-100-nm parallel lines by means of near-field photolithography J. A. Rogers et al., Appl. Phys. Lett. 70, 2658 (1997). In the near-field region, the scattering effect is so strong that the scalar theory is no longer adequate: A bright line was found adjacent to the dark line previously predicted by the scalar theory, and the widths of both lines were found to be insensitive to the refractive index of the photoresist. The simulation results are in good agreement with experimental studies, which showed that the bright and dark lines could be used to generate trenches and lines in a positive-tone photoresist by controlling the exposure time. Our simulations also indicate that parallel lines as small as 50 nm can be generated by adjusting the parameters of the phase mask. © 2001 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
02.60.Pn Numerical optimization
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Polymer photonic crystal slab waveguides

C. Liguda, G. Böttger, A. Kuligk, R. Blum, M. Eich, H. Roth, J. Kunert, W. Morgenroth, H. Elsner, and H. G. Meyer

Appl. Phys. Lett. 78, 2434 (2001); http://dx.doi.org/10.1063/1.1366364 (3 pages) | Cited 41 times

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We present details of the fabrication, calculations, and transmission measurements for finite two-dimensional (2D) polymer photonic crystal (PC) slab waveguides, which were fabricated from a benzocyclobutene polymer on a low refractive index substrate from Teflon. A square air hole lattice (500 nm lattice constant, 300 nm hole diameter) was realized by electron beam lithography and reactive ion etching. Polarization and wavelength dependent transmission results show TE-like and TM-like stop gaps at 1.3 μm excitation wavelengths and are in good agreement with the calculated data obtained by 2D and three-dimensional finite difference time domain methods. Transmission was suppressed by 15 dB in the center of the TE-like stop gap for a PC length of ten lattice constants. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
42.25.Bs Wave propagation, transmission and absorption
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.65.Cf Surface cleaning, etching, patterning
42.86.+b Optical workshop techniques
02.70.Bf Finite-difference methods

Diamond-like carbon films as electron-injection layer in organic light emitting diodes

K. Lmimouni, C. Legrand, C. Dufour, A. Chapoton, and C. Belouet

Appl. Phys. Lett. 78, 2437 (2001); http://dx.doi.org/10.1063/1.1367900 (3 pages) | Cited 15 times

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In this letter a thin film of diamond-like carbon (DLC) deposited by pulse laser deposition (PLD) is used as an electron injection layer in organic light emitting diodes. The heterojunction structures of these devices consist of: indium tin oxide (ITO)/conducting polymer/DLC/nickel, or ITO/DLC/P3OT/Pt. Poly(3-octylthiophene) conjugated polymer (P3OT) is used as the emission layer. In all the realized diodes, the current is two orders of magnitude larger than in the conventional ITO/P3OT/aluminum structure, and the driving voltage is drastically reduced. However, the light emission is observed only in the ITO/DLC/P3OT/Pt structure. These results can be interpreted in terms of a highly efficient electron injection from the DLC into the conducting polymer and a DLC/P3OT interface. © 2001 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
85.60.Jb Light-emitting devices
73.61.Jc Amorphous semiconductors; glasses
81.15.Fg Pulsed laser ablation deposition
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