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30 Apr 2001

Volume 78, Issue 18, pp. 2617-2804

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Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, G. Simin, M. S. Shur, and R. Gaska

Appl. Phys. Lett. 78, 2781 (2001); http://dx.doi.org/10.1063/1.1353813 (3 pages) | Cited 19 times

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We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to p GaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag, Au, and p GaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffraction analysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
68.35.Fx Diffusion; interface formation
79.60.-i Photoemission and photoelectron spectra
85.60.Jb Light-emitting devices

High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Shih-Yen Lin, Yau-Ren Tsai, and Si-Chen Lee

Appl. Phys. Lett. 78, 2784 (2001); http://dx.doi.org/10.1063/1.1365950 (3 pages) | Cited 33 times

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Ten-stacked InAs/GaAs quantum-dot infrared photodetectors with single Al0.3Ga0.7As blocking layers at either side of the stacked dots are investigated. With peak responsivity 214 mA/W and specific detectivity 1.17×1010 cm Hz1/2/W at 6 μm, quantum-dot infrared photodetectors with single-sided blocking layers are superior in responsivity with compatible detectivity as compared to those without blocking layers. Enhancement of the photoelectron avalanche process and the absence of negative differential conductance are observed. The devices exhibit two different infrared absorption regions at 2–6 and 6–10 μm, which indicates a wide detection window of the device. © 2001 American Institute of Physics.
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78.67.Hc Quantum dots
85.60.Gz Photodetectors (including infrared and CCD detectors)

Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen

Appl. Phys. Lett. 78, 2787 (2001); http://dx.doi.org/10.1063/1.1368378 (3 pages) | Cited 85 times

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We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Dz II-VI semiconductors
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition
73.40.Sx Metal-semiconductor-metal structures
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects

Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors

Alejandro Avellan, Wolfgang Krautschneider, and Stefan Schwantes

Appl. Phys. Lett. 78, 2790 (2001); http://dx.doi.org/10.1063/1.1360779 (3 pages) | Cited 8 times

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Parallel measurements of random telegraph signals (RTS) in the gate and drain currents of n-metal–oxide–semiconductor field-effect transistors with 1.3-nm-thin gate oxides are presented. RTS appear simultaneously in both currents. Contrary to what could be expected, the signals have opposite signs in the gate and drain currents. A model is proposed to explain this phenomenon by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current. Therefore, the gate current is a much more sensitive indicator for RTS than the drain current. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Td Noise processes and phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Self-organized (553)BIn0.15Ga0.85As/GaAs quantum-wire field-effect transistors

Fa-Wang Yan, Xian-Jie Li, Wen-Jun Zhang, Rong-Gui Zhang, Wei-Ji Liu, Jin-Ping Ao, Chun-Guang Liang, and Shi-Young Liu

Appl. Phys. Lett. 78, 2793 (2001); http://dx.doi.org/10.1063/1.1365949 (3 pages)

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Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105 cm−1. The strong photoluminescence peak at λ = 868 nm from the (553)B QWRs shows a large polarization anisotropy [p = (I∥−I⊥)/(I∥+I⊥) = 0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, self-organized QWR field-effect transistors were fabricated (the channel along the QWRs’ direction). The devices demonstrate very good saturation characteristics and pinch-off behavior at room temperature. A maximum transconductance (gm) of 135 mS/mm is measured for 2 μm gate-length devices. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
81.05.Ea III-V semiconductors
78.67.Lt Quantum wires
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
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