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30 Apr 2001

Volume 78, Issue 18, pp. 2617-2804

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Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy

A. Gruverman, A. Kholkin, A. Kingon, and H. Tokumoto

Appl. Phys. Lett. 78, 2751 (2001); http://dx.doi.org/10.1063/1.1366644 (3 pages) | Cited 69 times

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Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior of Pb(Zr, Ti)O3 thin films via the direct observation of their domain structures. The study revealed a significant asymmetry of a switching pattern which is a function of the voltage polarity and original domain structure of individual grains. The phenomenon of asymmetric switching is attributed (1) to the presence of an internal built-in electric field at the bottom interface and (2) to the mechanical stress exerted by the SFM tip. The former effect results in incomplete 180° switching, while the latter effect leads to a 90° rotation of the polarization vector. The resulting shear stress deformation of the grain underneath the tip combined with the applied field effect propels polarization reversal in the adjacent grains. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Dielectric loss and defect mode of SrTiO3 thin films under direct-current bias

Chen Ang, L. E. Cross, Zhi Yu, Ruyan Guo, A. S. Bhalla, and Jian Hua Hao

Appl. Phys. Lett. 78, 2754 (2001); http://dx.doi.org/10.1063/1.1367299 (3 pages) | Cited 24 times

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The dielectric behavior of SrTiO3 thin films prepared by the pulsed-laser deposition technique on SrTiO3 single-crystal substrates is studied under dc electric field. A high dielectric constant maximum εmax( ∼ 2280) and a low-loss tan δ ( ∼ 0.001) are obtained. Compared with the observation in SrTiO3 single crystals, an additional dielectric loss peak with frequency dispersion is observed around 150 K (at 1 kHz). With increasing dc bias, the peak is suppressed and finally disappears at ∼350 kV/cm; however, the temperature at which the peak occurs is independent of electric field. The possible physical mechanism of the peak is briefly discussed. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Charge dynamics in silicon nitride/silicon oxide double layers

Xiaoqing Zhang and Gerhard M. Sessler

Appl. Phys. Lett. 78, 2757 (2001); http://dx.doi.org/10.1063/1.1369387 (3 pages) | Cited 9 times

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Transport of positive charge deposited by a corona discharge on the open nitride surface of a silicon nitride (150 nm)/silicon oxide (300 nm) double layer on silicon substrate is studied by determining the location of the charge centroid with a capacitance–voltage method used in conjunction with surface-potential measurements. At temperatures of about 400 °C, the charge is mobile in the nitride and a large part of it is eventually trapped at the nitride/oxide interface while some of the charge reaches the substrate through the oxide. Indications are that at this temperature the mean free path of positive charges in the nitride and oxide layers is comparable to the layer thicknesses, but much shorter in the nitride at lower temperatures. © 2001 American Institute of Physics.
Show PACS
73.61.Ng Insulators
52.77.Dq Plasma-based ion implantation and deposition
73.40.Cg Contact resistance, contact potential
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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