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30 Apr 2001

Volume 78, Issue 18, pp. 2617-2804

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Energy distributions of electrons emitted from GaAs(Cs, O)

D. A. Orlov, M. Hoppe, U. Weigel, D. Schwalm, A. S. Terekhov, and A. Wolf

Appl. Phys. Lett. 78, 2721 (2001); http://dx.doi.org/10.1063/1.1368376 (3 pages) | Cited 19 times

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A method to map out the energy distribution N(E∥,E⊥) of an electron beam as a function of the longitudinal (E∥) and transverse (E⊥) energy has been developed and applied to study the photoemission process from GaAs(Cs, O) at 90 K. The method proceeds by “marking” electrons with fixed longitudinal energy E∥b and a subsequent measurement of the associated differential transverse energy distribution N⊥(E∥b,E⊥), applying an adiabatic magnetic compression technique. The complete energy distribution N(E∥,E⊥) of electrons from a GaAs(Cs, O) photocathode obtained by a stepwise variation of E∥b provides details about the transfer of electrons through the GaAs(Cs, O)–vacuum interface and demonstrates that not only electron energy loss, but also elastic electron scattering is of crucial importance in the escape process. © 2001 American Institute of Physics.
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79.60.Dp Adsorbed layers and thin films
68.43.Mn Adsorption kinetics
81.05.Ea III-V semiconductors

Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states

Chi-Kuang Sun, Jian-Chin Liang, Xiang-Yang Yu, Stacia Keller, Umesh K. Mishra, and Steven P. DenBaars

Appl. Phys. Lett. 78, 2724 (2001); http://dx.doi.org/10.1063/1.1366650 (3 pages) | Cited 7 times

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Ultrafast carrier dynamics of bandtail states in an unintentionally doped gallium nitride sample was investigated using femtosecond transient transmission measurements. The transient responses of shallow bandtail states resemble those of above band gap extended states. The transient responses of the deep bandtail states are, on the other hand dominated by carrier transfer into the lower energy states through phonon assisted tunneling suggesting that the deep bandtail states are localized states. © 2001 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.55.Eq III-V semiconductors

Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

M. M. Mitan, D. P. Pivin, T. L. Alford, and J. W. Mayer

Appl. Phys. Lett. 78, 2727 (2001); http://dx.doi.org/10.1063/1.1369608 (3 pages) | Cited 3 times

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CoSi2 structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As++ through a cobalt (34 nm)/oxide ( ∼ 2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3×1015 cm−2 was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm. © 2001 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
73.40.Ns Metal-nonmetal contacts
81.07.Bc Nanocrystalline materials
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
64.75.-g Phase equilibria
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
73.40.Cg Contact resistance, contact potential

Structure and formation mechanism of the Eα′ center in amorphous SiO2

T. Uchino, M. Takahashi, and T. Yoko

Appl. Phys. Lett. 78, 2730 (2001); http://dx.doi.org/10.1063/1.1369147 (3 pages) | Cited 5 times

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We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Eα′, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two different types of paramagnetic centers that are consistent with the experimental spectral features for Eα′. The highly anisotropic symmetry and the isotropic hyperfine coupling constants observed for one of the Eα′- center variants are reproduced by the present model. © 2001 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Jv Disordered structures; amorphous and glassy solids
76.30.Mi Color centers and other defects
61.43.Er Other amorphous solids

Output-coupling semiconductor saturable absorber mirror

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller

Appl. Phys. Lett. 78, 2733 (2001); http://dx.doi.org/10.1063/1.1370122 (3 pages) | Cited 21 times

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We present a semiconductor saturable absorber mirror (SESAM), which also acts as an output coupler at the same time. The influence of the output coupler transmission onto the absorber parameters is investigated theoretically, as well as experimentally. A passively Q-switched Nd:YVO4 microchip laser is built using such a nonlinear output coupler, yielding clean pulses of 143 ps duration, 48 nJ energy, and 572 W peak power. This result is compared with the traditional approach, where the SESAM is not used as an output coupler. © 2001 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Gn Optical waveguides and couplers
42.79.Bh Lenses, prisms and mirrors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
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