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30 Apr 2001

Volume 78, Issue 18, pp. 2617-2804

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Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development

Shazia Yasin, D. G. Hasko, and H. Ahmed

Appl. Phys. Lett. 78, 2760 (2001); http://dx.doi.org/10.1063/1.1369615 (3 pages) | Cited 66 times

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We report on the fabrication of 3–4 nm wide continuous lines in a positive tone electron beam resist poly(methylmethacrylate) on a solid substrate. This narrow linewidth was made possible through the use of a nonsolvent-based developer system, water:isopropyl alcohol, together with ultrasonically-assisted development, which reduced the effective development time thus limiting the swelling of the unexposed resist. This combination of solvent system and development technique results in a smaller radius of gyration in the developing polymer molecules and in a wider exposure dose latitude compared to conventional processing and so allows ultrasmall features to be reproduced. © 2001 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography

Scanning tunneling microscope-induced modification of Ag films and nanowire arrays on Cu(100) surfaces

S. M. York and F. M. Leibsle

Appl. Phys. Lett. 78, 2763 (2001); http://dx.doi.org/10.1063/1.1369618 (3 pages) | Cited 3 times

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We demonstrate the ability to use scanning tunneling microscopy to create nanometer-scale pits on Ag films grown on Cu(100) substrates. Atomic resolution images show that the Ag structures are intact within these pits. We also demonstrate how we can selectively modify segments of Ag nanowire arrays grown on atomic nitrogen modified Cu(100) surfaces. © 2001 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.16.Ta Atom manipulation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Self-organized molecular-sized, hexagonally ordered SnOx nanodot superlattices on Pt(111)

Matthias Batzill, David E. Beck, and Bruce E. Koel

Appl. Phys. Lett. 78, 2766 (2001); http://dx.doi.org/10.1063/1.1369613 (3 pages) | Cited 13 times

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Complete oxidation of the (√3×√3)R30° Sn/Pt(111) surface alloy or submonolayer amounts of Sn adatoms on Pt(111) under ultrahigh vacuum conditions, forms a highly ordered, lateral superlattice of SnOx islands on the Pt(111) substrate. The island superstructure exhibits a sharp (5×5) low energy electron diffraction pattern. Scanning tunneling microscopy images show islands arranged in a hexagonal lattice, uniformly distributed over the whole sample. This island array is thermally stable up to 1050 K. The coincidence of the island periodicity with a multiple of the supporting substrate, and the same hexagonal symmetry of islands and substrate, suggests a strong island–substrate interaction. We propose that the island formation results from the breakup of a strained SnOx adlayer. © 2001 American Institute of Physics.
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68.65.Cd Superlattices
81.07.Ta Quantum dots
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation

Pyrolytically grown arrays of highly aligned BxCyNz nanotubes

Wei-Qiang Han, John Cumings, and Alex Zettl

Appl. Phys. Lett. 78, 2769 (2001); http://dx.doi.org/10.1063/1.1369620 (3 pages) | Cited 12 times

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A pyrolysis route has been used to synthesize arrays of highly aligned BxCyNz nanotubes in bulk. The structure and composition of the product were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, and electron energy-loss spectroscopy. The length and diameter of the nanotubes are quite uniform in a large area of the reaction zone. The sizes of the aligned BxCyNz nanotubes from the whole reaction zone are 10–30 μm in length and 20–140 nm in diameter. The x/z ratio of BxCyNz nanotubes for most nanotubes is about 1:1. The x/y ratio of BxCyNz nanotubes is up to 0.6. Within one nanotube, the x/y ratio is usually heterogeneous. The growth mechanism is also discussed. © 2001 American Institute of Physics.
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81.07.De Nanotubes
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
61.46.-w Structure of nanoscale materials
81.16.Be Chemical synthesis methods
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
61.66.Bi Elemental solids
61.66.Dk Alloys
79.20.Uv Electron energy loss spectroscopy

Structure of boron nitride nanotubules

B. G. Demczyk, J. Cumings, A. Zettl, and R. O. Ritchie

Appl. Phys. Lett. 78, 2772 (2001); http://dx.doi.org/10.1063/1.1367906 (3 pages) | Cited 36 times

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We have used high-resolution transmission electron microscopy to resolve the [0001] projected basal plane structure and chirality relationships in boron nitride nanotubes. Evidence for tube growth along both 〈10math0〉 and 〈11math0〉 is found. Our results suggest that the 〈11math0〉 (armchair) tubes form first. Subsequent growth can take the form of a 〈10math0〉 (zig-zag) tube or additional armchair tubes. In both cases, the additional walls can be accommodated without the need for defect formation for circumferential tube closure. These results suggest that real boron nitride tubes may, in practice, realize their inherently high modulus and display less variation of mechanical properties than tubes comprised of carbon. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
81.07.De Nanotubes
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Field emission from cylindrical carbon nanotube cathodes: Possibilities for luminescent tubes

Jean-Marc Bonard, Thomas Stöckli, Olivier Noury, and André Châtelain

Appl. Phys. Lett. 78, 2775 (2001); http://dx.doi.org/10.1063/1.1367903 (3 pages) | Cited 81 times

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We show that the field of application of cold electron film emitters can be extended to nonplanar geometries by demonstrating a cylindrical field emission diode. The cathode is a metallic wire on which multiwall carbon nanotubes are grown by the catalytic decomposition of acetylene over a Fe catalyst. The emitter shows excellent performances and can be used to realize a luminescent, mercury-free, tube. © 2001 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes
85.35.Kt Nanotube devices
85.45.Db Field emitters and arrays, cold electron emitters
85.60.Ha Photomultipliers; phototubes and photocathodes
85.45.Bz Vacuum microelectronic device characterization, design, and modeling

Ballistic photoconductivity in nanostructures

H. Ruda and A. Shik

Appl. Phys. Lett. 78, 2778 (2001); http://dx.doi.org/10.1063/1.1368372 (3 pages)

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A model for photoconductivity of nanostructures, in which carriers move collisionlessly between electrodes or regions of intensive recombination, is presented. Detailed analysis was performed for two particular cases: a thin film between two bulk contacts and low-temperature grown GaAs containing As clusters. The photocurrent dependence on the applied voltage V was found to be essentially nonlinear for small V and tend to saturation for large V. The spectrum of photoconductivity differs drastically from that of optical absorption and is characterized by a maximum near the absorption edge, with peak position depending on V. © 2001 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
73.63.Bd Nanocrystalline materials
72.80.Ey III-V and II-VI semiconductors
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