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Applied Physics Letters / Volume 78 / Issue 19 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 78, 2922 (2001); http://dx.doi.org/10.1063/1.1370984 (3 pages)

Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)

Ho Nyung Lee, Stephan Senz, Alain Pignolet, and Dietrich Hesse

Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany

(Received 10 October 2000; accepted 12 March 2001)

Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ–2θ and ϕ scans revealed well-defined orientation relationships, viz. SBT(103)∥SRO(111)∥MgO(111)∥YSZ(100)∥Si(100); SBT[010]∥SRO[0math1]∥MgO[0math1]∥YSZ〈001〉∥Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (Ec) of 76 kV/cm for a maximum applied electric field of 440 kV/cm. © 2001 American Institute of Physics.

© 2001 American Institute of Physics

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KEYWORDS and PACS

Keywords

strontium compounds, bismuth compounds, ferroelectric materials, ferroelectric thin films, pulsed laser deposition, vapour phase epitaxial growth, X-ray diffraction

PACS

  • 77.55.-g

    Dielectric thin films

  • 81.15.Fg

    Pulsed laser ablation deposition

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 77.80.-e

    Ferroelectricity and antiferroelectricity

  • 77.84.Ek

    Niobates and tantalates

  • 77.84.Cg

    PZT ceramics and other titanates

  • 68.55.-a

    Thin film structure and morphology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1370984

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. N. Lee, A. Visinoiu, S. Senz, C. Harnagea, A. Pignolet, D. Hesse, and U. Gösele, J. Appl. Phys. 88, 6658 (2000)JAPIAU000088000011006658000001.

    J. Lettieri, Y. Jia, M. Urbanik, C. I. Weber, J.-P. Maria, D. G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, Appl. Phys. Lett. 73, 2923 (1998)APPLAB000073000020002923000001;, J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, 76, 2937 (2000)APPLAB000076000020002937000001.

    S. E. Moon, T. K. Song, S. B. Back, S.-I. Kwun, J.-G. Yoon, and J. S. Lee, Appl. Phys. Lett. 75, 2827 (1999)APPLAB000075000018002827000001.

    H. N. Lee, S. Senz, N. D. Zakharov, C. Harnagea, A. Pignolet, D. Hesse, and U. Gösele, Appl. Phys. Lett. 77, 3260 (2000)APPLAB000077000020003260000001.

    D. K. Fork, D. B. Fenner, G. A. N. Connell, J. M. Phillips, and T. H. Geballe, Appl. Phys. Lett. 57, 1137 (1990)APPLAB000057000011001137000001.

    X. D. Wu, L. Luo, R. E. Muenchausen, K. N. Springer, and S. Foltyn, Appl. Phys. Lett. 60, 1381 (1992)APPLAB000060000011001381000001.


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