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1 Jan 2001

Volume 78, Issue 1, pp. 1-137

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Quaternary Znx′Cdy′Mg1−x′−y′Se/ZnxCdyMg1−x−ySe quantum wells grown on InP substrates for blue emission

S. P. Guo, L. Zeng, and M. C. Tamargo

Appl. Phys. Lett. 78, 1 (2001); http://dx.doi.org/10.1063/1.1337631 (3 pages) | Cited 26 times

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Quaternary Znx′Cdy′Mg1−x′−y′Se/ZnxCdyMg1−x−ySe quantum well (QW) structures in which both the well and the barrier layers are composed of quaternary alloys lattice matched to InP and having various well thicknesses have been grown and investigated. A blue emission with narrow linewidth was achieved by using a relatively thick well thickness (40–60 Å). The quaternary QW emission exhibits excitonic recombination behavior and it has higher quantum efficiency than the ternary ZnxCd1−xSe/ZnxCdyMg1−x−ySe QW of comparable thickness. The temperature dependence of the photoluminescence measurements shows a high activation energy of 68 meV, indicating a strong quantum confinement by introduction of Mg in the QW region. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.67.De Quantum wells
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena

Zinc oxide doping effects in polarization switching of lithium niobate

L.-H. Peng, Y.-C. Zhang, and Y.-C. Lin

Appl. Phys. Lett. 78, 4 (2001); http://dx.doi.org/10.1063/1.1336815 (3 pages) | Cited 30 times

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We report a pulsed-field analysis on the 180° domain reversal process in Z-cut congruent grown lithium niobate (LiNbO3) doped with zinc oxide at concentration CZnO>5 mol %. The polarization switching field is found to decrease with the ZnO doping with a threshold (Eth) and internal (Eint) field as low as 2.5 and 0.5 kV/mm, respectively, resultant on 8 mol % ZnO doped LiNbO3. The substantial decrease of Eth and Eint is ascribed to the suppression of nonstoichiometric point defects by the substitution of Zn2+ ions in the lattice site. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
42.70.Mp Nonlinear optical crystals
77.80.Dj Domain structure; hysteresis
61.72.Yx Interaction between different crystal defects; gettering effect

Temporal and spatial evolution of the electronic density and temperature of the plasma produced by laser ablation of LiNbO3

F. J. Gordillo-Vázquez, A. Perea, J. A. Chaos, J. Gonzalo, and C. N. Afonso

Appl. Phys. Lett. 78, 7 (2001); http://dx.doi.org/10.1063/1.1335853 (3 pages) | Cited 36 times

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Emission spectroscopy is used to determine the spatial and temporal evolution of the electronic temperature (Te) and density (Ne) of the plasma generated by laser ablation in vacuum of a LiNbO3 target. It is found that whereas Ne (in the range of 1016 cm−3) decreases by a factor of 2 as the distance to the target surface increases 10 mm, Te (in the range 0.7–0.8 eV) only decreases 10% between 2 and 4 mm from the target to remain nearly constant for longer distances. While Te is almost constant in time at the studied distances, Ne presents a maximum at a time delay that increases when increasing the distance to the target surface. The space–time constancy of Te is related to a collisional decoupling of the heavy species in the plasma for distances longer than 2–4 mm. © 2001 American Institute of Physics.
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52.38.Mf Laser ablation
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.-b Plasma properties
81.15.Fg Pulsed laser ablation deposition

Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation

L. Fu, H. H. Tan, C. Jagadish, Na Li, Ning Li, Xingquan Liu, Wei Lu, and S. C. Shen

Appl. Phys. Lett. 78, 10 (2001); http://dx.doi.org/10.1063/1.1332984 (3 pages) | Cited 10 times

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Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs’ response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors. © 2001 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Refractive-index patterning using near-field scanning optical microscopy

Satoshi Takahashi, Katsutoshi Samata, Hirokazu Muta, Shinjiro Machida, and Kazuyuki Horie

Appl. Phys. Lett. 78, 13 (2001); http://dx.doi.org/10.1063/1.1336164 (3 pages) | Cited 19 times

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By using near-field scanning optical microscopy (NSOM), patterning of pure refractive-index contrast on a transparent polymer film has been demonstrated. A thin film of poly(methyl methacrylate) doped with 3-phenyl-2,5-norbornadiene-2-carboxylic acid is irradiated with 325 nm UV light from an NSOM probe, resulting in a refractive-index decrease without changes in complete transparency in the visible region and surface flatness. The transmission NSOM image was obtained by the same probe at an incident wavelength of 442 nm. The relative change of the transmission signal is in agreement with the value deduced from a simple model based on the Rayleigh scattering theory of dielectric media. © 2001 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.41.+e Polymers, elastomers, and plastics
42.70.Jk Polymers and organics
68.37.Uv Near-field scanning microscopy and spectroscopy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Pv Polymers, organic compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.70.Gi Light-sensitive materials

Electromagnetic energy transport along arrays of closely spaced metal rods as an analogue to plasmonic devices

Stefan A. Maier, Mark L. Brongersma, and Harry A. Atwater

Appl. Phys. Lett. 78, 16 (2001); http://dx.doi.org/10.1063/1.1337637 (3 pages) | Cited 51 times

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The transport of electromagnetic energy along structures consisting of arrays of closely spaced metal rods (spacing = 0.2 cm) was investigated in the microwave regime at 8.0 GHz (λ = 3.7 cm). The dispersion relation shows that information transport occurs at a group velocity of 0.6c. The electromagnetic energy is highly confined to the arrays (90% within a distance of 0.05λ from the array). The propagation loss in a straight array is 3 dB/8 cm. Routing of energy around 90° corners is possible with a power loss of 3–4 dB. Analogies to plasmon wires consisting of arrays of nm-size metal clusters are discussed. © 2001 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.Ba Antennas: theory, components and accessories
07.05.Tp Computer modeling and simulation
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