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8 Jan 2001

Volume 78, Issue 2, pp. 139-257

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Theoretical investigation of high temperature IV–VI compound continuous wave midinfrared vertical cavity surface emitting lasers

S. Khosravani and Z. Shi

Appl. Phys. Lett. 78, 139 (2001); http://dx.doi.org/10.1063/1.1337626 (3 pages) | Cited 13 times

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Theoretical investigations on the optically pumped IV-VI mid-infrared vertical-cavity surface emitting lasers were made. Key parameters such as Auger recombination and heat dissipation were identified and maximum operating temperature, peak output power, and threshold pumping power were simulated. Unlike other band-to-band mid-IR laser materials, Auger recombination does not limit IV-VI diode lasers to operate at room temperature in continuous wave (cw) mode. However, insufficient heat dissipation is the dominant factor in preventing laser operation at room temperature. The calculated maximum cw operation temperature for a simple active layer design was 282 K and could be further improved for more advanced structures such as quantum well lasers. These results indicate that such lasers are promising for thermoelectrically cooled spectroscopic systems. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Pk Continuous operation

100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

Y. Kanamori, K. Hane, H. Sai, and H. Yugami

Appl. Phys. Lett. 78, 142 (2001); http://dx.doi.org/10.1063/1.1339845 (2 pages) | Cited 107 times

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An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis. © 2001 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
78.40.Fy Semiconductors
81.65.Cf Surface cleaning, etching, patterning

Simultaneous generation of red, green, and blue continuous-wave laser radiation in Nd3+-doped aperiodically poled lithium niobate

J. Capmany

Appl. Phys. Lett. 78, 144 (2001); http://dx.doi.org/10.1063/1.1338495 (3 pages) | Cited 35 times

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Simultaneous generation of red, green, and blue continuous-wave laser radiation in a Nd3+-doped aperiodically poled lithium-niobate crystal is reported. Red (686 nm) and green (542 nm) are obtained by self-frequency-doubling fundamental infrared laser lines at 1084 and 1372 nm oscillating simultaneously. Blue (441 nm) is obtained by self-sum-frequency mixing of end-pump laser radiation at 744 nm and the fundamental laser line at 1084 nm. Other laser lines at 605 nm (orange) and 482 nm (blue) are simultaneously obtained by self-sum-frequency mixing of both infrared fundamentals and by self-sum-frequency mixing of pump laser radiation with the remaining fundamental line at 1372 nm, respectively. A weaker violet (372 nm) laser emission results from frequency doubling of the pump radiation. © 2001 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.60.Pk Continuous operation

Quantum-cascade lasers based on a bound-to-continuum transition

Jérôme Faist, Mattias Beck, Thierry Aellen, and Emilio Gini

Appl. Phys. Lett. 78, 147 (2001); http://dx.doi.org/10.1063/1.1339843 (3 pages) | Cited 89 times

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A quantum-cascade structure combining the advantages of the three-quantum well and superlattice active regions is demonstrated. In these devices, the emission occurs between a state localized close to the injection barrier and a miniband. A low threshold current density (3.6 kA/cm2), large slope efficiency (200 mW/A for 35 periods), and peak power (700 mW) are achieved at 30 °C while a peak power of 90 mW is obtained at temperatures as high as 150 °C. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
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Magnetic-field-dependent plasma composition of a pulsed aluminum arc in an oxygen ambient

Jochen M. Schneider, André Anders, and George Yu. Yushkov

Appl. Phys. Lett. 78, 150 (2001); http://dx.doi.org/10.1063/1.1339847 (3 pages) | Cited 10 times

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A variety of plasma-based deposition techniques utilize magnetic fields to affect the degree of ionization as well as for focusing and guiding of plasma beams. Here we use time-of-flight charge-to-mass spectrometry to describe the effect of a magnetic field on the plasma composition of a pulsed Al plasma stream in an ambient containing intentionally introduced oxygen as well as for high vacuum conditions typical residual gas. The plasma composition evolution was found to be strongly dependent on the magnetic field strength and can be understood by invoking two electron impact ionization routes: ionization of the intentionally introduced gas as well as ionization of the residual gas. These results are characteristic of plasma-based techniques where magnetic fields are employed in a high-vacuum ambient. In effect, the impurity incorporation during reactive thin-film growth pertains to the present findings. © 2001 American Institute of Physics.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.77.Dq Plasma-based ion implantation and deposition
52.70.Nc Particle measurements
52.30.Cv Magnetohydrodynamics (including electron magnetohydrodynamics)
82.80.Rt Time of flight mass spectrometry
34.80.Gs Molecular excitation and ionization

On the surface condition of Langmuir probes in reactive plasmas

E. Stamate and K. Ohe

Appl. Phys. Lett. 78, 153 (2001); http://dx.doi.org/10.1063/1.1338489 (3 pages) | Cited 18 times

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The edge effect of a planar probe induces an elliptic-like sheath structure that acts as an electrostatic lens, which then focuses the charged particles on distinct regions of the probe surface. Positive-ion sputtering, chemical adsorption, and/or plasma deposition divide the probe surface into distinct regions with different work functions, which cause a double-hump structure (DHS) in the second derivative of the probe current. Thus, the DHS cannot be correlated with a distinct group of charged particles. © 2001 American Institute of Physics.
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52.70.Ds Electric and magnetic measurements
52.40.Kh Plasma sheaths
34.35.+a Interactions of atoms and molecules with surfaces
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Deformation behavior of ion-beam-modified GaN

S. O. Kucheyev, J. E. Bradby, J. S. Williams, C. Jagadish, M. V. Swain, and G. Li

Appl. Phys. Lett. 78, 156 (2001); http://dx.doi.org/10.1063/1.1335552 (3 pages) | Cited 22 times

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The deformation behavior of wurtzite GaN films modified by ion bombardment is studied by nanoindentation with a spherical indenter. Results show that implantation disorder significantly changes the mechanical properties of GaN. In particular, GaN amorphized by ion bombardment exhibits plastic deformation even for very low loads with dramatically reduced values of hardness and Young’s modulus compared to the values of as-grown GaN. Implantation-produced defects in crystalline GaN suppress the plastic component of deformation and significantly change the values of hardness and Young’s modulus. In addition, implantation disorder in crystalline GaN suppresses both “pop-in” events during loading and the appearance of slip traces on the sample surface as a result of indentation. This strongly suggests that slip nucleation (rather than a phase transformation) is the physical mechanism responsible for the pop-in events observed during loading of as-grown crystalline GaN. © 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.20.F- Deformation and plasticity
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
62.20.Qp Friction, tribology, and hardness

Dynamic visualization of subangstrom high-frequency surface vibrations

J. E. Graebner, B. P. Barber, P. L. Gammel, D. S. Greywall, and S. Gopani

Appl. Phys. Lett. 78, 159 (2001); http://dx.doi.org/10.1063/1.1338954 (3 pages) | Cited 20 times

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An optical scanning interferometer for accurate imaging of high-frequency surface vibrations is described. Vertical-displacement (out-of-plane) resolution of the interferometer is ∼0.003 Å, while lateral resolution is diffraction limited, typically ∼0.5 μm. The high-frequency response is limited by the detector to ∼6 GHz. Both the magnitude and phase are recorded at each point of the scan, so that an accurate measurement of the instantaneous surface shape is obtained. Furthermore, the phase information allows one to make a slow-motion movie of the vibrating surface. Data are presented for three examples in the frequency range 4 MHz–2 GHz. © 2001 American Institute of Physics.
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68.35.Ja Surface and interface dynamics and vibrations
07.60.Ly Interferometers

Monocrystalline silicon carbide nanoelectromechanical systems

Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, M. L. Roukes, C. A. Zorman, and M. Mehregany

Appl. Phys. Lett. 78, 162 (2001); http://dx.doi.org/10.1063/1.1338959 (3 pages) | Cited 102 times

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SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. © 2001 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.65.Cf Surface cleaning, etching, patterning
07.10.Cm Micromechanical devices and systems

Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers

Soon-Ku Hong, Elisabeth Kurtz, Ji-Ho Chang, Takashi Hanada, Masaoki Oku, and Takafumi Yao

Appl. Phys. Lett. 78, 165 (2001); http://dx.doi.org/10.1063/1.1339262 (3 pages) | Cited 28 times

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We report a remarkably low stacking-fault density in ZnSe epilayers directly grown on commercial epi-ready GaAs (001) substrates without GaAs buffer layer growth. It is found that proper pregrowth treatments on epi-ready GaAs (001) substrates to obtain clean surfaces are crucial for two-dimensional layer-by-layer growth and suppression of stacking fault generation. Chemical etching using a NH4OH-based solution is found to reduce not only the thickness of the oxide layers but also the ratio of Ga2O3 to As2O3 to about half of that before etching. A clean GaAs (001) surface characterized by a (4×1) reconstruction in the present case is obtained after thermal cleaning followed by Zn pre-exposure. Reflection high-energy electron diffraction intensity oscillations with more than 50 periods are observed even from the very beginning of ZnSe growth on GaAs substrates cleaned as such. The stacking fault density in such a ZnSe layer is in the low-105 cm−2 range. © 2001 American Institute of Physics.
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61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Nano-oxidation of H-terminated p-Si(100): Influence of the humidity on growth and surface properties of oxide islands

H. Jungblut, D. Wille, and H. J. Lewerenz

Appl. Phys. Lett. 78, 168 (2001); http://dx.doi.org/10.1063/1.1338501 (3 pages) | Cited 19 times

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Nanometer-scale oxide islands were formed on p-Si(100) by use of an atomic-force microscope in ambient air. The islands were investigated using contact and friction mode. Volumes were determined from cross-sectional measurements before and after HF etching. A pronounced influence of the relative humidity (hr) of the ambient air on the size and on the friction behavior of the islands was found. A distinct peak of the size distribution was observed at hr ≈ 85%. The friction images showed a clear contrast inversion at this humidity value. At lower humidities, the friction between tip and oxide was larger than on H-terminated silicon, at higher humidities, it was lower. A condensation mechanism occurring at the meniscus between the tip and H-terminated silicon surface is suggested, which explains the results. © 2001 American Institute of Physics.
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81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation
68.35.Gy Mechanical properties; surface strains
68.37.Ps Atomic force microscopy (AFM)
81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth

Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions?

Y. Yan, D. Albin, and M. M. Al-Jassim

Appl. Phys. Lett. 78, 171 (2001); http://dx.doi.org/10.1063/1.1338969 (3 pages) | Cited 18 times

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We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd–O bonds at the grain boundaries, which are resistance to the S diffusion. © 2001 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Bs Mechanical and acoustical properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.Mm Grain and twin boundaries
81.05.Ea III-V semiconductors

Ultraviolet photoluminescence from nonbridging oxygen hole centers in porous silica

Baodian Yao, Huazhong Shi, Xinyi Zhang, and Lide Zhang

Appl. Phys. Lett. 78, 174 (2001); http://dx.doi.org/10.1063/1.1339844 (3 pages) | Cited 30 times

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In this letter, we report the observation of an ultraviolet (UV) photoluminescence (PL) emission at around 330 nm in porous silica prepared by the sol–gel process. Upon a posttreatment which leads to OH adsorption, the intensity of the observed UV PL emission increases significantly. It is shown that this behavior is associated with the increase of OH groups adsorbed on the surface of porous silica. We suggest that the observed UV PL emission originates from the nonbridging oxygen hole centers generated from surface hydroxyls. The mechanism of the UV PL emission is expressed tentatively by combining the nonbridging oxygen centers charge modification model and the vibrative absorption of a SiO2 network containing water. © 2001 American Institute of Physics.
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78.55.Mb Porous materials
61.43.Gt Powders, porous materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.43.Mn Adsorption kinetics
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy

M. A. Reshchikov, P. Visconti, and H. Morkoç

Appl. Phys. Lett. 78, 177 (2001); http://dx.doi.org/10.1063/1.1338496 (3 pages) | Cited 13 times

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We have studied the broad blue band, which emerges in the photoluminescence (PL) spectrum of c-plane GaN layers after etching in hot H3PO4 and subsequent exposure to air. This band exhibited a 100 meV blueshift with increasing excitation intensity and a thermal quenching with activation energies of 12 and 100 meV. These observations led us to suggest that surface states may be formed on etched surfaces and cause bandbending, which leads to a shift in transition energy with excitation. The blue PL is related to transitions from the shallow donors filled with nonequilibrium electrons to the surface states, which capture the photogenerated holes. The observed irreversible bleaching of the blue luminescence may be attributed to the metastable nature of the surface states or to the oxygen desorption. © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.Cf Surface cleaning, etching, patterning

Enhanced oxygen precipitation in silicon due to grown-in spatial inhomogeneities in the oxygen distribution

Zhihong Wang, Talid Sinno, and Robert A. Brown

Appl. Phys. Lett. 78, 180 (2001); http://dx.doi.org/10.1063/1.1339851 (3 pages) | Cited 1 time

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Fine control of oxygen precipitation during annealing of silicon wafers is required for modern microelectronics processing. We show that the presence of microscopic spatial inhomogeneities in the oxygen concentration caused by fluctuations during crystal growth, can lead to significantly enhanced effective nucleation rates. This effect is demonstrated for a simple nonlinear reaction-diffusion model and then confirmed by simulations of oxide precipitation. © 2001 American Institute of Physics.
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81.30.Mh Solid-phase precipitation
61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors

Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence

Masashi Ishii, Yoshihito Tanaka, Tetsuya Ishikawa, Shuji Komuro, Takitaro Morikawa, and Yoshinobu Aoyagi

Appl. Phys. Lett. 78, 183 (2001); http://dx.doi.org/10.1063/1.1336546 (3 pages) | Cited 19 times

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In order to discuss the local structure of an optically active center in Er-doped Si thin film, site-selective x-ray absorption fine structure (XAFS) analysis using x-ray-excited optical luminescence was performed. The XAFS spectrum at the Er LIII edge was obtained from the x-ray photon energy dependence of the peak intensity of infrared luminescence due to Erintra-4f transition. Although conventional XAFS measurement analyzes the average structure of all of the Er, this method intrinsically provides structural information for only optically active Er. A broad 2p–5d resonant peak in the site-selective XAFS spectrum is reproduced by a density-of-state calculation of a distorted ErO6 cluster, assuming an Er transformation from an octahedral center of 0.25 Å. © 2001 American Institute of Physics.
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78.70.Dm X-ray absorption spectra
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators

Super sequential lateral growth of Nd:YAG laser crystallized hydrogenated amorphous silicon

Y. F. Tang, S. R. P. Silva, and M. J. Rose

Appl. Phys. Lett. 78, 186 (2001); http://dx.doi.org/10.1063/1.1337627 (3 pages) | Cited 9 times

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Lateral growth crystallization of hydrogenated amorphous silicon with single and multiple pulse excitation using a Nd:YAG laser at a wavelength of 532 nm and a 3 ns pulse width at a repetition of 10 Hz is shown. With single pulse crystallization, large grain sizes of the order of 1 μm were obtained with an energy density >400 mJ/cm2, and these have been studied using transmission electron microscopy (TEM) and atomic force microscopy. We show that, by using extremely short (3 ns) multiple pulse excitation of significantly lower powers (<150 mJ/cm2), than that used to crystallize amorphous silicon with single pulse excitation, a uniform growth of crystalline grains is observed. TEM gives evidence for lateral grain growth with multiple pulse crystallization at low energies. We suggest that a “super sequential lateral growth” mechanism is occurring. © 2001 American Institute of Physics.
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81.05.Gc Amorphous semiconductors
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
81.05.Cy Elemental semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys

Effects of biaxial strain and chemical ordering on the band gap of InGaN

A. F. Wright, K. Leung, and M. van Schilfgaarde

Appl. Phys. Lett. 78, 189 (2001); http://dx.doi.org/10.1063/1.1338490 (3 pages) | Cited 13 times

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We have performed first-principles calculations to examine the effects of biaxial strain and chemical ordering on the band gap of wurtzite InxGa1−xN in the range 0 ⩽ x ⩽ 0.5. Our results for random unstrained alloys are in good agreement with theoretical estimates and measurements on unstrained zinc-blende alloys, but are in poor agreement with recent measurements on strained wurtzite alloys which display significantly lower band gaps. Biaxial strain is found to have a nonlinear effect on alloy band gaps, increasing them for x<0.25 and decreasing them for x>0.25. However, the overall agreement with measurements on wurtzite alloys remains poor. Chemical ordering along the [0001] direction in strained alloys is found to decrease their band gaps considerably, reducing the discrepancy with measurements. We discuss our results with regard to the current understanding of InGaN alloys. © 2001 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.66.Fn Inorganic compounds

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

M. Schreck, F. Hörmann, H. Roll, J. K. N. Lindner, and B. Stritzker

Appl. Phys. Lett. 78, 192 (2001); http://dx.doi.org/10.1063/1.1337648 (3 pages) | Cited 45 times

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It is shown that diamond nucleation on iridium buffer layers followed by an appropriate textured-growth step offers a viable way to realize single-crystal diamond films. Bias-enhanced nucleation on iridium layers results in heteroepitaxial diamond films with highly improved alignment. By a subsequent textured-growth step, the mosaicity can be further reduced for tilt as well as for twist in sharp contrast to former experiments using silicon substrates. Minimum values of 0.17° and 0.38° have been measured for tilt and twist, respectively. Plan view transmission electron microscopy of these films shows that, for low thicknesses (0.6 μm and 8 μm), the films are polycrystalline, consisting of a closed network of grain boundaries. In contrast, at the highest thickness (34 μm) most of the remaining structural defects are concentrated in bands of limited extension. The absence of an interconnected network of grain boundaries shows that the latter films are no longer polycrystalline. © 2001 American Institute of Physics.
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81.05.U- Carbon/carbon-based materials
68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Cy Elemental semiconductors
52.77.Dq Plasma-based ion implantation and deposition

Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains

A. Kreuter, G. Wagner, K. Otte, G. Lippold, A. Schindler, and M. Schubert

Appl. Phys. Lett. 78, 195 (2001); http://dx.doi.org/10.1063/1.1334354 (3 pages) | Cited 10 times

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The anisotropic optical constants of slightly In-rich CuInSe2 are determined on the (112) surface of a naturally grown single-crystal sample with orientation domains using generalized spectroscopic ellipsometry for photon energies between 0.8 and 4.5 eV. Orientation domains within the sample, revealed by electron diffraction investigation, cause biaxial response of the sample surface. The CuInSe2 dielectric functions are extracted at each wavelength rigorously considering orientation domains and surface roughness effects, and improve previous results. © 2001 American Institute of Physics.
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71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Temperature and pressure dependence of Mg local modes in GaN

G. Kaczmarczyk, A. Kaschner, A. Hoffmann, and C. Thomsen

Appl. Phys. Lett. 78, 198 (2001); http://dx.doi.org/10.1063/1.1339848 (3 pages) | Cited 3 times

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The temperature and pressure dependence of the zone-center phonons and of the local vibrational modes of magnesium in the hexagonal modification of GaN was studied within a valence-force model. The contribution caused by thermal expansion was calculated and compared with the experiment. We find that the frequency shift of the local vibrational modes arises to a much larger extent from anharmonic decay into lower energy phonons than the shift of the GaN host modes. © 2001 American Institute of Physics.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
65.40.De Thermal expansion; thermomechanical effects

Multiscale modeling of stress-mediated diffusion in silicon: Ab initio to continuum

Matthew Laudon, Neil N. Carlson, Michael P. Masquelier, Murray S. Daw, and Wolfgang Windl

Appl. Phys. Lett. 78, 201 (2001); http://dx.doi.org/10.1063/1.1336158 (3 pages) | Cited 20 times

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In this letter, we present the development of a complete methodology to simulate the effects of general anisotropic nonuniform stress on dopant diffusion in silicon. The macroscopic diffusion equation is derived from microscopic transition-state theory; the microscopic parameters are calculated from first principles; a feature-scale stress-prediction methodology based on stress measurements in the relevant materials as a function of temperature has been developed. The developed methodology, implemented in a continuum solver, is used to investigate a TiN metal gate system. A compressive stress field is predicted in the substrate, resulting in an enhancement in lateral boron diffusion. This enhancement, which our model attributes mostly to solubility effects, is in good agreement with experiment. © 2001 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si

Experimental measurement of microwave-induced electron spin-flip time

C. Y. Hu, P. H. Tan, W. Ossau, T. Wojtowicz, G. Karczewski, and J. Kossut

Appl. Phys. Lett. 78, 204 (2001); http://dx.doi.org/10.1063/1.1338961 (3 pages) | Cited 3 times

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The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X−) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X− emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 μs, which is much longer than the recombination time of X and X−. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. © 2001 American Institute of Physics.
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76.70.Hb Optically detected magnetic resonance (ODMR)
73.21.Fg Quantum wells
78.67.De Quantum wells
71.35.Gg Exciton-mediated interactions
78.55.Et II-VI semiconductors

Annealing behavior of implanted helium in indium phosphide

Todd W. Simpson and Ian V. Mitchell

Appl. Phys. Lett. 78, 207 (2001); http://dx.doi.org/10.1063/1.1337643 (3 pages) | Cited 5 times

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The thermal stability of 3He implanted into single crystal indium phosphide has been studied as a function of postimplant annealing temperature between 150 and 600 °C and annealing temperature ramp rate in the range 0.1–20 ° C/s. Retention of implanted helium (implant energy 1.0 MeV and fluence 1.0×1016 cm−2) is measured via the 3He(d,p)4He nuclear reaction. Helium is shown to be a facile diffuser unless trapped by implantation induced defects. The temperature ramp rate is shown to be a dominant parameter in determining the fraction of implanted helium that becomes trapped in voids. © 2001 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.Qq Microscopic defects (voids, inclusions, etc.)
82.80.-d Chemical analysis and related physical methods of analysis
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities

Excitation efficiency of electrons and holes in forward and reverse biased epitaxially grown Er-doped Si diodes

M. Markmann, E. Neufeld, A. Sticht, K. Brunner, and G. Abstreiter

Appl. Phys. Lett. 78, 210 (2001); http://dx.doi.org/10.1063/1.1338955 (3 pages) | Cited 13 times

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In this letter, we report on the excitation efficiency of erbium ions by hot electrons and holes in Si:Er:O and Si1−yCy:Er pn diodes at 10 K. In forward bias, a higher electroluminescence efficiency at 1.54 μm is observed for incorporating the erbium ions in the p region of the diode, where enough holes are present to form bound excitons for erbium excitation. In reverse bias, electrons turn out to be 5000 times more efficient in impact exciting of Er3+ than holes at equal space-charge region widths. A dark region of 45 nm for electrons and about 70 nm for holes is present where no erbium excitation is possible. Impact excitation of Er codoped by C is much less efficient than for O codoping. © 2001 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.61.Cw Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
71.55.Cn Elemental semiconductors
73.50.Fq High-field and nonlinear effects
71.35.Gg Exciton-mediated interactions
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