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21 May 2001

Volume 78, Issue 21, pp. 3163-3363

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Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x)S/Si(100) interfaces

Y. Hotta, E. Rokuta, H. Tabata, H. Kobayashi, and T. Kawai

Appl. Phys. Lett. 78, 3283 (2001); http://dx.doi.org/10.1063/1.1356724 (3 pages) | Cited 15 times

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We have obtained ferroelectric characteristics from nonoxide (ZnxCd1−x)S (x = 0.1–0.3) thin films. On the basis of x-ray photoelectron and visible–ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (ZnxCd1−x)S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10−6 A/cm2 at a gate voltage of 4 V. © 2001 American Institute of Physics.
Show PACS
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.40.Fy Semiconductors
78.66.Hf II-VI semiconductors
78.66.Db Elemental semiconductors and insulators
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films

Improved electrical properties of (Pb, La)TiO3 thin films using compositionally and structurally compatible LaNiO3 thin films as bottom electrodes

Dinghua Bao, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani, and Xi Yao

Appl. Phys. Lett. 78, 3286 (2001); http://dx.doi.org/10.1063/1.1375831 (3 pages) | Cited 22 times

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Homogeneous LaNiO3 thin films were grown on thermally oxidized silicon (SiO2/Si) substrates by a sol-gel technique, for the subsequent sol-gel deposition of (Pb, La)TiO3 thin films, under the assumption that the structural and compositional compatibility between ferroelectric films and bottom electrodes could lead to enhanced electrical properties of ferroelectric thin films. In this work, the LaNiO3 films served three functions: the first was used as bottom electrodes for the fabrication of integrated ferroelectric devices on Si due to their low resistivity; the second was used as a seeding layer, promoting perovskite phase formation due to their structural compatibility with ferroelectric films; and the third was to suppress the composition diffusion between ferroelectric films and bottom electrodes due to their composition compatibility. The experimental results demonstrated that (Pb, La)TiO3 films prepared on the LaNiO3/SiO2/Si substrates had excellent electrical properties. The dielectric constant and dielectric loss were 1468 and 0.033, respectively. The dielectric constant is rather high among the values reported for (Pb, La)TiO3 thin films. The remanent polarization and coercive field were 4.24 μC/cm2 and 23.2 kV/cm, respectively. © 2001 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model

M. Houssa, A. Stesmans, R. J. Carter, and M. M. Heyns

Appl. Phys. Lett. 78, 3289 (2001); http://dx.doi.org/10.1063/1.1375003 (3 pages) | Cited 24 times

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The time dependence of the current density variation ΔJ(t) observed during constant gate voltage stress of metal–oxide–semiconductor capacitors with ultrathin gate oxide and oxynitride layers is investigated. The generation of bulk neutral defects in the SiO2 layer is calculated within a dispersive transport model, assuming that these defects are induced by the random hopping of H+ ions in the gate oxide layer. It is shown that the stress–voltage and gate-oxide-thickness dependence of ΔJ(t) can be quite well explained by this dispersive hydrogen transport model. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
66.30.H- Self-diffusion and ionic conduction in nonmetals

Epitaxial growth of the first five members of the Srn+1TinO3n+1 Ruddlesden–Popper homologous series

J. H. Haeni, C. D. Theis, D. G. Schlom, W. Tian, X. Q. Pan, H. Chang, I. Takeuchi, and X.-D. Xiang

Appl. Phys. Lett. 78, 3292 (2001); http://dx.doi.org/10.1063/1.1371788 (3 pages) | Cited 53 times

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The first five members of the Srn+1TinO3n+1 Ruddlesden–Popper homologous series, i.e., Sr2TiO4, Sr3Ti2O7, Sr4Ti3O10, Sr5Ti4O13, and Sr6Ti5O16, have been grown by reactive molecular beam epitaxy. A combination of atomic absorption spectroscopy and reflection high-energy electron diffraction intensity oscillations were used for the strict composition control necessary for the synthesis of these phases. X-ray diffraction and high-resolution transmission electron microscope images confirm that these films are epitaxially oriented and nearly free of intergrowths. Dielectric measurements indicate that the dielectric constant tensor coefficient ϵ33 increases from a minimum of 44±4 in the n = 1(Sr2TiO4) film to a maximum of 263±2 in the n = ∞(SrTiO3) film. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
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