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18 Jun 2001

Volume 78, Issue 25, pp. 3927-4046

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Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Toshio Nishida, Hisao Saito, and Naoki Kobayashi

Appl. Phys. Lett. 78, 3927 (2001); http://dx.doi.org/10.1063/1.1377854 (2 pages)

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By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341–343 nm. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.72.Bj Visible and ultraviolet sources
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
78.60.Fi Electroluminescence

Femtosecond switching with semiconductor-optical-amplifier-based Symmetric Mach–Zehnder-type all-optical switch

Shigeru Nakamura, Yoshiyasu Ueno, and Kazuhito Tajima

Appl. Phys. Lett. 78, 3929 (2001); http://dx.doi.org/10.1063/1.1379790 (3 pages) | Cited 18 times

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We investigate the effect of intraband carrier dynamics on a nonlinear phase shift induced in a semiconductor optical amplifier (SOA) in terms of its applicability to the Symmetric Mach–Zehnder (SMZ) all-optical switch. Nonlinear phase shifts in an SOA and a passive semiconductor waveguide are compared under control-pulse durations ranging from 3.2 to 0.4 ps. The results show that femtosecond switching with higher efficiency is still possible by using the SOA. We experimentally achieve femtosecond (670 fs), femtojoule (140 fJ) switching with the SOA-based SMZ all-optical switch. © 2001 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
07.60.Ly Interferometers
42.65.Wi Nonlinear waveguides

Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure

A. Kiraz, P. Michler, C. Becher, B. Gayral, A. Imamoğlu, Lidong Zhang, E. Hu, W. V. Schoenfeld, and P. M. Petroff

Appl. Phys. Lett. 78, 3932 (2001); http://dx.doi.org/10.1063/1.1379987 (3 pages) | Cited 80 times

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We investigate cavity-quantum electrodynamics (QED) effects in an all-semiconductor nanostructure by tuning a single self-assembled InAs quantum dot (QD) into resonance with a high quality factor microdisk whispering gallery mode (WGM). The stronger temperature dependence of the QD single-exciton (1X) resonance allows us to change the relative energy of the WGM and the 1X transitions by varying the sample temperature. The two coupled resonances exhibit crossing behavior due to the weak coupling cavity-QED regime. We demonstrate exciton lifetime reduction by 6 due to the Purcell effect by tuning the QD into resonance with the WGM. Our experiments also show that single-exciton lifetime is independent of temperature up to 50 K. © 2001 American Institute of Physics.
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78.67.Hc Quantum dots
78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.21.La Quantum dots

Room-temperature operation of photopumped monolithic InP vertical-cavity laser with two air-gap Bragg reflectors

N. Chitica and M. Strassner

Appl. Phys. Lett. 78, 3935 (2001); http://dx.doi.org/10.1063/1.1379983 (3 pages) | Cited 5 times

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We demonstrate a long wavelength (λ = 1.56 μm) vertical-cavity laser built on a low-loss resonator formed by two InP/air-gap Bragg reflectors. The monolithic, InP-based structure uses a periodic gain active region with six strain-compensated quantum wells. The photopumped vertical-cavity laser requires record low power density of only 370 W/cm2 to reach threshold at 25 °C. The equivalent threshold current density is estimated to be as low as 400 A/cm2. Continuous-wave operation is demonstrated up to 32 °C despite the low heat conductivity of the reflectors. The emission is single mode and a power of up to 110 μW has been coupled into a single-mode fiber. © 2001 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Pk Continuous operation
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Chirp reduction in semiconductor lasers through injection current patterning

N. Dokhane and G. L. Lippi

Appl. Phys. Lett. 78, 3938 (2001); http://dx.doi.org/10.1063/1.1379060 (3 pages) | Cited 4 times

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The introduction of patterned current fronts that modulate the transition between directly modulated optical bits allows for a strong reduction of the optical chirp in a single-mode semiconductor laser, as shown in the numerical integration of a standard model. Hence, optical transmission of information over much longer distances without signal deterioration and a substantial increase in data transmission speed are possible. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Large-signal coherent control of normal modes in quantum-well semiconductor microcavity

Y.-S. Lee, T. B. Norris, A. Maslov, D. S. Citrin, J. Prineas, G. Khitrova, and H. M. Gibbs

Appl. Phys. Lett. 78, 3941 (2001); http://dx.doi.org/10.1063/1.1378316 (3 pages) | Cited 7 times

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We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π produces a differential reflectivity (ΔR/R) of up to 20%. The maximum nonlinear signal is obtained for cocircular pump and probe polarization. Excitation-induced dephasing is responsible for the incoherent nonlinear response, and limits the contrast ratio of the optical switching. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Fg Quantum wells
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.35.-y Excitons and related phenomena
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.55.Sa Microcavity and microdisk lasers

High diffraction efficiency polarization gratings recorded by biphotonic holography in an azobenzene liquid crystalline polyester

C. Sánchez, R. Alcalá, S. Hvilsted, and P. S. Ramanujam

Appl. Phys. Lett. 78, 3944 (2001); http://dx.doi.org/10.1063/1.1379791 (3 pages) | Cited 14 times

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High diffraction efficiencies have been achieved with polarization gratings recorded in thin films of an azobenzene side-chain liquid crystalline polyester by means of biphotonic processes. Efficiency values up to 30% have been reached after an induction period of 300 s and subsequent evolution with the sample in darkness. These values are at least two orders of magnitude higher than those previously reported for biphotonic recording. The gratings can be erased with unpolarized blue light and partial recovery of the diffraction efficiency has been observed after the erasure process when the sample is kept in darkness. Red light illumination of the erased film increases the recovered efficiency value and the recovery rate. © 2001 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Dj Gratings
42.79.Kr Display devices, liquid-crystal devices

White light emission from exciplex using tris-(8-hydroxyquinoline)aluminum as chromaticity-tuning layer

Jing Feng, Feng Li, Wenbao Gao, Shiyong Liu, Yu Liu, and Yue Wang

Appl. Phys. Lett. 78, 3947 (2001); http://dx.doi.org/10.1063/1.1379788 (3 pages) | Cited 46 times

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We demonstrate efficient organic white light-emitting devices (LEDs), using N,N′-diphenyl-N,N′-bis(1-naphthyl)–(1,1′-biphenyl)-4,4′-diamine (NPB) as the hole-transporting layer, 1,6-bis(2-hydroxyphenyl)pyridine boron complex [(dppy)BF)] as the emitting layer, tris-(8-hydroxyquinoline)aluminum (Alq) as the electron-transporting and chromaticity-tuning layer. The white light comes from exciplex emission at the solid-state interface between (dppy)BF and NPB in addition to the exciton emission from NPB and (dppy)BF, respectively. The chromaticity of white emission can be tuned by adjusting the thickness of the Alq layer. The white LEDs with an Alq thickness of 15 nm exhibit a maximum luminescence of 2000 cd/m2 and efficiency of 0.58 lm/W, and the Commission Internationale De l’Eclairage coordinates of resulting emission vary from (0.29,0.33) to (0.31,0.35) with increasing forward bias from 10 to 25 V. The region is very close to the equienergy white point (0.33,0.33). © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials

Injectorless quantum-cascade lasers

Michael C. Wanke, Federico Capasso, Claire Gmachl, Alessandro Tredicucci, Deborah L. Sivco, Albert L. Hutchinson, S.-N. George Chu, and Alfred Y. Cho

Appl. Phys. Lett. 78, 3950 (2001); http://dx.doi.org/10.1063/1.1378805 (3 pages) | Cited 25 times

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An “injectorless” quantum-cascade (QC) laser is presented. The requirement of using injector regions to transport electrons from the lower laser level and other low-lying energy levels of one active region to the upper laser level of the next electron-downstream active region was eliminated by using an appropriately designed double-quantum-well “chirped” superlattice active region. The major advantage of the “injectorless” QC laser is the close packing of the active regions and the concomitant large optical confinement factor. Using a cascade of 75 consecutive active regions, designed for emission at λ = 11.5 μm, a pulsed peak output power of 270 mW is achieved at 7 K and approximately 10 mW at the maximum operating temperature of 195 K. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Z-scan study on the nonlinear refractive index of copper nanocluster composite silica glass

G. Battaglin, P. Calvelli, E. Cattaruzza, F. Gonella, R. Polloni, G. Mattei, and P. Mazzoldi

Appl. Phys. Lett. 78, 3953 (2001); http://dx.doi.org/10.1063/1.1380243 (3 pages) | Cited 31 times

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We used the Z-scan technique for measuring the nonlinear refractive index n2 of a thin composite film formed by copper nanoparticles embedded in silica glass. By varying the number of pulses of the laser shot, we evidenced heating effects induced by the laser during measurements. We were able to estimate the nonthermal refractive-index value, n2 = (3.0±0.3)×10−12 cm2/W. © 2001 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.66.Sq Composite materials
81.07.Bc Nanocrystalline materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Efficient tunable luminescence of SiGe alloy sheet polymers

G. Vogg, A. J.-P. Meyer, C. Miesner, M. S. Brandt, and M. Stutzmann

Appl. Phys. Lett. 78, 3956 (2001); http://dx.doi.org/10.1063/1.1378315 (3 pages) | Cited 1 time

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Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si1−xGex)2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. © 2001 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics

Structural properties of a GaNxP1−x alloy: Raman studies

I. A. Buyanova, W. M. Chen, E. M. Goldys, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 78, 3959 (2001); http://dx.doi.org/10.1063/1.1380244 (3 pages) | Cited 9 times

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Raman measurements in backscattering configuration are employed to characterize the effect of nitrogen on the structural properties of a GaNxP1−x alloy with x ⩽ 3%. The following effects of N incorporation on the vibrational spectra of GaNP are observed. First, frequencies of GaP-like and GaN-like longitudinal optical phonons exhibit strong compositional dependence, due to a combined effect of alloying and biaxial strain. Second, a dramatic quenching of two-phonon Raman scattering and an emergence of zone-edge GaP-like vibrations are observed. These effects are tentatively attributed to a local distortion of the GaNP lattice and/or compositional disorder in the alloy. © 2001 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
63.20.K- Phonon interactions
68.55.-a Thin film structure and morphology

Determination of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry

Y. Hayashi, G. Yu, M. M. Rahman, K. M. Krishna, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 78, 3962 (2001); http://dx.doi.org/10.1063/1.1374501 (3 pages) | Cited 6 times

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Nitrogen-doped hydrogenated amorphous carbon films have been deposited on silicon substrates by radio-frequency plasma-enhanced chemical vapor deposition using different N2/CH4 gas ratios from 0 to 3. The real and imaginary parts, n and k, of the complex index of refraction of these films have been determined for wavelengths between 300 and 830 nm by spectroscopic ellipsometry. Excellent agreement has been found between measured and modeled spectra, in which an empirical dielectric function based on classical Lorentz oscillator and Tauc joint density of states, and a linear void distribution along the thickness of the films have been assumed. Decrease in the optical energy gap and increase in the extinction coefficient, k, with increase in nitrogen concentration have been observed. Refractive index, n, increases rapidly with increase in nitrogen concentration up to 6.8 at. % (∼7.0 at. %) and then increases slowly with further increase in nitrogen concentration. For all the samples, n is found to be highest at the film-substrate interface which gradually decreases towards the film surface. © 2001 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Ultrafast carrier and phonon dynamics in ion-irradiated graphite

K. Ishioka, M. Hase, M. Kitajima, and K. Ushida

Appl. Phys. Lett. 78, 3965 (2001); http://dx.doi.org/10.1063/1.1379782 (3 pages) | Cited 13 times

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The effect of defects on the dynamics of photoexcited carriers and coherent acoustic phonon in graphite is investigated by means of reflectivity measurements with femtosecond time resolution. Point defects are introduced by irradiating graphite with 5 keV He+ ions. Introduction of the defects enhances the carrier relaxation by opening a decay channel via vacancy states, which competes efficiently with carrier–phonon scattering. The coherent phonon relaxation is also accelerated due to an additional scattering by defects. The linear fluence dependence of the decay rate is understood as scattering of propagating acoustic phonon by single vacancies. © 2001 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.82.Ms Insulators
78.47.-p Spectroscopy of solid state dynamics
63.20.K- Phonon interactions
61.72.J- Point defects and defect clusters
72.40.+w Photoconduction and photovoltaic effects

Photocatalysis of sculptured thin films of TiO2

Motofumi Suzuki, Tadayoshi Ito, and Yasunori Taga

Appl. Phys. Lett. 78, 3968 (2001); http://dx.doi.org/10.1063/1.1380730 (3 pages) | Cited 50 times

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Enhanced surface reaction efficiency has been demonstrated in the photocatalysis of obliquely deposited TiO2 thin films with variously shaped columns such as zigzag, cylinder, and helix. The columnar thickness and spacing play an important role in the enhancement of the effective surface area, while the columnar shape is less important. The optimum morphology for a surface reaction has been obtained at the deposition angle α = 70°, where the photocatalytic activity is 2.5 times larger than that at α = 0°. The morphology controlled obliquely deposited thin films are applicable for solar cell, electro- and photochromic devices besides photocatalyst. © 2001 American Institute of Physics.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.Hp Processes caused by visible and UV light
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Theory of lithographically-induced self-assembly

Z. Suo and J. Liang

Appl. Phys. Lett. 78, 3971 (2001); http://dx.doi.org/10.1063/1.1380728 (3 pages) | Cited 26 times

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Recent experiments show that, when a two-phase fluid confined between parallel substrates is subject to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. It is well known that the total interface energy reduces when the island diameter increases. We show that, under certain conditions, the electrostatic free energy reduces when the island diameter decreases. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. We describe the conditions for electrostatic field to stabilize the island lattice, and analyze an idealized model. The theory suggests considerable experimental control over stable island size. © 2001 American Institute of Physics.
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81.16.Dn Self-assembly
81.16.Nd Micro- and nanolithography
68.55.-a Thin film structure and morphology
85.40.Hp Lithography, masks and pattern transfer
81.15.Aa Theory and models of film growth
68.03.Cd Surface tension and related phenomena
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

Peide Han, Zhanguo Wang, Xiaofeng Duan, and Ze Zhang

Appl. Phys. Lett. 78, 3974 (2001); http://dx.doi.org/10.1063/1.1380731 (3 pages) | Cited 11 times

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GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the c-Al2O3 whose c face is backward to its crystal seed has [000math] polarity. © 2001 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Theoretical study of sulfur–hydrogen–vacancy complex in diamond

Takehide Miyazaki, Hideyo Okushi, and Tsuyoshi Uda

Appl. Phys. Lett. 78, 3977 (2001); http://dx.doi.org/10.1063/1.1381041 (3 pages) | Cited 13 times

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We present an ab initio study of sulfur (S)–hydrogen (H)–vacancy (V) complexes in diamond. An S–H–V defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the S-doped crystal, preferential formation of other deep-level defects would deactivate the shallow S-complex donors. © 2001 American Institute of Physics.
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71.55.Cn Elemental semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.72.J- Point defects and defect clusters
61.72.Bb Theories and models of crystal defects
61.72.Yx Interaction between different crystal defects; gettering effect

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer, and R. J. Molnar

Appl. Phys. Lett. 78, 3980 (2001); http://dx.doi.org/10.1063/1.1379789 (3 pages) | Cited 57 times

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The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.66.Bi Elemental solids
61.66.Dk Alloys

Normal-incidence spectroscopic ellipsometry for critical dimension monitoring

Hsu-Ting Huang, Wei Kong, and Fred Lewis Terry

Appl. Phys. Lett. 78, 3983 (2001); http://dx.doi.org/10.1063/1.1378807 (3 pages) | Cited 16 times

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In this letter, we show that normal-incidence spectroscopic ellipsometry can be used for high-accuracy topography measurements on surface relief gratings. We present both experimental and theoretical results which show that spectroscopic ellipsometry or reflectance-difference spectroscopy at near-normal incidence coupled with vector diffraction theory for data analysis is capable of high-accuracy critical dimension (CD), feature height, and sidewall angle measurements in the extreme submicron regime. Quantitative comparisons of optical and cross-sectional scanning electron microscopy (SEM) topography measurements from a number of 350 nm line/space reactive-ion-etched Si gratings demonstrate the strong potential for in situ etching monitoring. This technique can be used for both ex situ and in situ applications and has the potential to replace the use of CD-SEM measurements in some applications. © 2001 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.60.Fs Polarimeters and ellipsometers

Specular reflection enhancement and reduction from the surface of a photorefractive crystal in the presence of a “pump” beam

Jiasen Zhang, Shin Yoshikado, and Tadashi Aruga

Appl. Phys. Lett. 78, 3986 (2001); http://dx.doi.org/10.1063/1.1381411 (3 pages)

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We demonstrate the enhancement and reduction of the specular reflection from the surface of a photorefractive crystal in the presence of a “pump” beam. The pump beam could be the phase conjugate beam of the input beam or another laser beam. The contribution of the reflection grating is also demonstrated in a 45°-cut crystal. The change of the specular reflection with respect to the intensity ratio of the input beam to the pump beam is measured. © 2001 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.68.+m Optical properties of surfaces
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation

K. Li, S. Y. Chen, and Z. X. Shen

Appl. Phys. Lett. 78, 3989 (2001); http://dx.doi.org/10.1063/1.1378309 (3 pages) | Cited 6 times

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A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222 (180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600–700 °C). This observation suggests that pulsed-laser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © 2001 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
85.30.Tv Field effect devices
85.40.Ls Metallization, contacts, interconnects; device isolation

Electroluminescence from a forward-biased Schottky barrier diode on modulation Si δ-doped GaAs/InGaAs/AlGaAs heterostructure

Adam Babiński, P. Witczak, A. Twardowski, and J. M. Baranowski

Appl. Phys. Lett. 78, 3992 (2001); http://dx.doi.org/10.1063/1.1380397 (3 pages) | Cited 4 times

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Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. © 2001 American Institute of Physics.
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78.60.Fi Electroluminescence
78.67.De Quantum wells
73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

Direct measurement of sub-10 nm-level lateral distribution in tunneling-electron luminescence intensity on a cross-sectional 50-nm-thick AlAs layer by using a conductive transparent tip

Tooru Murashita and Kouta Tateno

Appl. Phys. Lett. 78, 3995 (2001); http://dx.doi.org/10.1063/1.1380404 (3 pages) | Cited 8 times

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Tunneling-electron luminescence (TL) from nanometer-sized regions can be effectively collected with a conductive transparent (CT) tip that injects tunneling electrons and simultaneously collects luminescence. By using the CT tip, the lateral distribution of TL intensities has been directly measured on a cleaved 50-nm-thick AlAs layer in AlAs/GaAs multiple quantum wells. The TL intensity distribution measured on the AlAs layer agree fairly well with the sum of the exponential decay functions from each GaAs/AlAs interface with a decay length of 8 nm with an accuracy as high as a one-pixel interval of 3 nm. This decay length is close to the thermalization length of tunneling electrons in the AlAs layer. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
78.60.Hk Cathodoluminescence, ionoluminescence

Imaging of trapped charge in SiO2 and at the SiO2–Si interface

R. Ludeke and E. Cartier

Appl. Phys. Lett. 78, 3998 (2001); http://dx.doi.org/10.1063/1.1380396 (3 pages) | Cited 17 times

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Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. © 2001 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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