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18 Jun 2001

Volume 78, Issue 25, pp. 3927-4046

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Comment on “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing” [Appl. Phys. Lett. 76, 1585 (2000)]

V. V. Afanas’ev, A. Stesmans, M. Bassler, G. Pensl, and M. J. Schulz

Appl. Phys. Lett. 78, 4043 (2001); http://dx.doi.org/10.1063/1.1379978 (2 pages) | Cited 4 times

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Abstract Unavailable
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
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Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

K. Fukuda, K. Arai, S. Suzuki, and T. Tanaka

Appl. Phys. Lett. 78, 4045 (2001); http://dx.doi.org/10.1063/1.1379979 (1 page) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
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