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18 Jun 2001

Volume 78, Issue 25, pp. 3927-4046

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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Y. T. Hou, M. F. Li, W. H. Lai, and Y. Jin

Appl. Phys. Lett. 78, 4034 (2001); http://dx.doi.org/10.1063/1.1379786 (3 pages) | Cited 8 times

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We report the calculation of hole direct tunneling (DT) current from the inversion layer in a p-metal–oxide–semiconductor field-effect transistor based on a solid physical background. Our results are in good agreement with those obtained from carrier separation measurements over a wide range of oxide thicknesses in the ultrathin regime. The effect of valence band mixing on hole quantization in an inversion layer in a Si substrate is properly accounted for by an improved one-band effective mass approximation. A modified Wentzel–Kramers–Brillouin approximation to calculate the hole transmission probability is used by adopting a more accurate dispersion equation in the oxide gap. Our method is general, simple, and computationally efficient. It may even be used to calculate the hole DT current in other gate dielectric materials. © 2001 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Broadening the potential bandwidth of piezoelectric transducers by partial depolarization

Sid Ahmed Hariti, Stéphane Holé, and Jacques Lewiner

Appl. Phys. Lett. 78, 4037 (2001); http://dx.doi.org/10.1063/1.1379590 (3 pages) | Cited 2 times

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Elastic waves are used more and more in a nondestructive way to probe the physical properties of materials. The resolution of the images or the accuracy of the measurements is directly associated with the ultrasonic signal bandwidth and amplitude a system can generate or detect. The authors propose a technique to broaden the potential bandwidth of piezoelectric generators and sensors, which is based on utilizing a nonuniformly-polarized piezoelectric material. Both simulated and experimental responses are shown. They are in good agreement and exhibit a useful bandwidth over several natural harmonics of the piezoelectric transducer. © 2001 American Institute of Physics.
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43.38.Fx Piezoelectric and ferroelectric transducers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
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