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18 Jun 2001

Volume 78, Issue 25, pp. 3927-4046

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Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation

K. Li, S. Y. Chen, and Z. X. Shen

Appl. Phys. Lett. 78, 3989 (2001); http://dx.doi.org/10.1063/1.1378309 (3 pages) | Cited 6 times

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A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222 (180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600–700 °C). This observation suggests that pulsed-laser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © 2001 American Institute of Physics.
Show PACS
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
85.30.Tv Field effect devices
85.40.Ls Metallization, contacts, interconnects; device isolation

Electroluminescence from a forward-biased Schottky barrier diode on modulation Si δ-doped GaAs/InGaAs/AlGaAs heterostructure

Adam Babiński, P. Witczak, A. Twardowski, and J. M. Baranowski

Appl. Phys. Lett. 78, 3992 (2001); http://dx.doi.org/10.1063/1.1380397 (3 pages) | Cited 4 times

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Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. © 2001 American Institute of Physics.
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78.60.Fi Electroluminescence
78.67.De Quantum wells
73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

Direct measurement of sub-10 nm-level lateral distribution in tunneling-electron luminescence intensity on a cross-sectional 50-nm-thick AlAs layer by using a conductive transparent tip

Tooru Murashita and Kouta Tateno

Appl. Phys. Lett. 78, 3995 (2001); http://dx.doi.org/10.1063/1.1380404 (3 pages) | Cited 8 times

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Tunneling-electron luminescence (TL) from nanometer-sized regions can be effectively collected with a conductive transparent (CT) tip that injects tunneling electrons and simultaneously collects luminescence. By using the CT tip, the lateral distribution of TL intensities has been directly measured on a cleaved 50-nm-thick AlAs layer in AlAs/GaAs multiple quantum wells. The TL intensity distribution measured on the AlAs layer agree fairly well with the sum of the exponential decay functions from each GaAs/AlAs interface with a decay length of 8 nm with an accuracy as high as a one-pixel interval of 3 nm. This decay length is close to the thermalization length of tunneling electrons in the AlAs layer. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
78.60.Hk Cathodoluminescence, ionoluminescence

Imaging of trapped charge in SiO2 and at the SiO2–Si interface

R. Ludeke and E. Cartier

Appl. Phys. Lett. 78, 3998 (2001); http://dx.doi.org/10.1063/1.1380396 (3 pages) | Cited 17 times

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Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. © 2001 American Institute of Physics.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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