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18 Jun 2001

Volume 78, Issue 25, pp. 3927-4046

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Rapid ordering of Zr-doped FePt alloy films

Seong-Rae Lee, Sanghyun Yang, Young Keun Kim, and Jong Gab Na

Appl. Phys. Lett. 78, 4001 (2001); http://dx.doi.org/10.1063/1.1379591 (3 pages) | Cited 36 times

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The magnetic properties and microstructural evolution of Zr-doped FePt alloy films prepared by dc-magnetron sputtering were investigated. Compared to an undoped Fe59Pt41 binary film, Zr-doped FePt alloy films showed accelerated ordering transformation kinetics accompanying smaller grains: we were able to fabricate a Zr-doped FePt film [e.g., (Fe59Pt41)97Zr3] possessing very fine grain size (5 nm in average) and high coercivity (7.3 kOe) within 10 min annealing at 500 °C. It is thought that the point defects and lattice strain introduced by Zr-doping activated the nucleation rate of the ordered phase. In particular, for Zr-doped FePt films containing less than 45 at. % Pt, the ordered L10 phase was decomposed into a disordered phase after excessive annealing due to the formation of a Pt–Zr compound, most likely Pt3Zr, that reduces the effective Pt content in the ordered phase. © 2001 American Institute of Physics.
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75.50.Ss Magnetic recording materials
64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
75.50.Bb Fe and its alloys
75.70.Ak Magnetic properties of monolayers and thin films

Thermal activation-induced sweep-rate dependence of magnetic switching astroid

J. Z. Sun, J. C. Slonczewski, P. L. Trouilloud, D. Abraham, Ian Bacchus, W. J. Gallagher, J. Hummel, Yu Lu, G. Wright, S. S. P. Parkin, and R. H. Koch

Appl. Phys. Lett. 78, 4004 (2001); http://dx.doi.org/10.1063/1.1379596 (3 pages) | Cited 15 times

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We examine the sweep-rate dependence of magnetic switching field, Hs, in submicron magnetic tunnel junctions where shape anisotropy is dominant. Experimental data support the use of a single-domain thermal activation model for description of activated magnetic reversal in junctions 0.2 by 0.5 μm or less in size. A scaling law is obtained for the thermal activation energy which varies as the cube of junction size. © 2001 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.45.+j Macroscopic quantum phenomena in magnetic systems
75.30.Gw Magnetic anisotropy

Study of dipole interaction in micron-width NiFe/Cu/NiFe/NiO wire using exchange anisotropy

Takashi Kimura, Yoshio Itagaki, Fujio Wakaya, and Kenji Gamo

Appl. Phys. Lett. 78, 4007 (2001); http://dx.doi.org/10.1063/1.1380238 (3 pages) | Cited 4 times

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The dipole interaction between a NiFe layer pinned by a NiO and a free NiFe layer in a micron-wide NiFe/Cu/NiFe/NiO wire was studied by changing the direction of the exchange bias from the NiO layer. The effect of the dipole interaction when the exchange bias was perpendicular to the wire axis was larger than that when the exchange bias was parallel to the wire axis, and was consistently explained by the stray field caused by the magnetic charges of the pinned layer. It was demonstrated that this method, using exchange anisotropy, is useful for investigating the dipole interaction between ferromagnetic materials separated by a nonmagnetic material in small-scale magnetic multilayers. © 2001 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Bb Fe and its alloys
75.30.Et Exchange and superexchange interactions
75.47.De Giant magnetoresistance

Stacks of intrinsic Josephson junctions singled out from inside Bi2Sr2CaCu2O8+x single crystals

H. B. Wang, P. H. Wu, and T. Yamashita

Appl. Phys. Lett. 78, 4010 (2001); http://dx.doi.org/10.1063/1.1379065 (3 pages) | Cited 6 times

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Using a double-side fabrication method, a stack of intrinsic Josephson junctions plus a bow-tie antenna and chokes were made in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. Potentially it would be possible to use this method to fabricate integrated circuits based on intrinsic Josephson junctions in high TC superconductors. © 2001 American Institute of Physics.
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85.25.Cp Josephson devices
74.72.-h Cuprate superconductors
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