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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)

I. Costina and R. Franchy

Appl. Phys. Lett. 78, 4139 (2001); http://dx.doi.org/10.1063/1.1380403 (3 pages) | Cited 30 times

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The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is ∼3.2 and ∼4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. © 2001 American Institute of Physics.
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71.23.-k Electronic structure of disordered solids
68.47.Gh Oxide surfaces
68.55.-a Thin film structure and morphology
71.20.Ps Other inorganic compounds
71.55.Ht Other nonmetals
71.55.Jv Disordered structures; amorphous and glassy solids
79.20.Uv Electron energy loss spectroscopy
68.49.Jk Electron scattering from surfaces
68.43.Mn Adsorption kinetics
81.65.Mq Oxidation
63.20.-e Phonons in crystal lattices
63.50.-x Vibrational states in disordered systems

Positron annihilation study of Pd contacts on impurity-doped GaN

Jong-Lam Lee, Jong Kyu Kim, Marc H. Weber, and Kelvin G. Lynn

Appl. Phys. Lett. 78, 4142 (2001); http://dx.doi.org/10.1063/1.1380395 (3 pages) | Cited 6 times

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Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.70.Bj Positron annihilation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

D. Huang, P. Visconti, K. M. Jones, M. A. Reshchikov, F. Yun, A. A. Baski, T. King, and H. Morkoç

Appl. Phys. Lett. 78, 4145 (2001); http://dx.doi.org/10.1063/1.1380399 (3 pages) | Cited 35 times

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The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaN films grown on high temperature AlN (>890 °C) and GaN (770–900 °C) buffer layers invariably show Ga and N polarity, respectively. However, the films grown using low temperature (∼500 °C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer. © 2001 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning

Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures

K. Ohtani, H. Sakuma, and H. Ohno

Appl. Phys. Lett. 78, 4148 (2001); http://dx.doi.org/10.1063/1.1381034 (3 pages)

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A potential notch in the well region is used to control the emission wavelength of type-II InAs/GaSb/AlSb intersubband light-emitting structures. Intersubband absorption measurements are performed to evaluate the subband structure of the active layers and are compared with theory. Type-II quantum cascade structures using these active layers are fabricated and midinfrared intersubband electroluminescence is observed. Calculation indicates that the active layer structure can emit electromagnetic waves in the THz region without employing a wide alloy well. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies

Bosang S. Kim, Igor L. Kuskovsky, C. Tian, Irving P. Herman, G. F. Neumark, S. P. Guo, and M. C. Tamargo

Appl. Phys. Lett. 78, 4151 (2001); http://dx.doi.org/10.1063/1.1381039 (3 pages) | Cited 3 times

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We have studied undoped Zn1−xBexSe alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn1−xBexSe PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an “effective mass” type. © 2001 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
71.55.Gs II-VI semiconductors
71.35.Gg Exciton-mediated interactions
81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

G. Barillaro, A. Diligenti, F. Pieri, F. Fuso, and M. Allegrini

Appl. Phys. Lett. 78, 4154 (2001); http://dx.doi.org/10.1063/1.1381572 (3 pages) | Cited 5 times

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A fabrication process, compatible with an industrial bipolar+complementary metal–oxide–semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n+/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Rm Porous materials; granular materials
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.60.-q Optoelectronic devices
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Effect of sintering temperature under high pressure on the superconductivity of MgB2

C. U. Jung, Min-Seok Park, W. N. Kang, Mun-Seog Kim, Kijoon H. P. Kim, S. Y. Lee, and Sung-Ik Lee

Appl. Phys. Lett. 78, 4157 (2001); http://dx.doi.org/10.1063/1.1382632 (3 pages) | Cited 43 times

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We report on the effect of sintering temperature on the superconductivity of MgB2 pellets prepared under a high pressure of 3 GPa. The superconducting properties of the nonheated MgB2 were poor. However, as the sintering temperature increased, the superconducting properties were vastly enhanced, which was demonstrated by the narrow transition width for the resistivity and the low-field magnetization. The observed surface morphology using scanning electron microscopy showed that these changes were closely related to changes in the microscopic level such as the connectivity of the grains. © 2001 American Institute of Physics.
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74.62.Fj Effects of pressure
74.72.-h Cuprate superconductors
74.25.F- Transport properties
74.25.Ha Magnetic properties including vortex structures and related phenomena
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Microwave properties of superconducting MgB2

N. Hakim, P. V. Parimi, C. Kusko, S. Sridhar, P. C. Canfield, S. L. Bud’ko, and D. K. Finnemore

Appl. Phys. Lett. 78, 4160 (2001); http://dx.doi.org/10.1063/1.1379366 (3 pages) | Cited 11 times

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Measurements of 10 GHz microwave surface resistance, Rs, of dense MgB2 wire and pellet are reported. Significant improvements are observed in the wire with reduction of porosity. The data lie substantially above the theoretical estimates for a pure Bardeen–Cooper–Schrieffer s-wave superconductor. However, the Rs (20 K) of the wire is an order of magnitude lower than that of polycrystal YBa2Cu3O6.95 and matches with single-crystal YBa2Cu3O6.95. The results show promise for the use of MgB2 in microwave applications. © 2001 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.F- Transport properties
74.25.N- Response to electromagnetic fields

High thermal stability of exchange-biased bilayers and bottom giant magnetoresistive spin valves using an α-Fe2O3 antiferromagnetic layer

Seongtae Bae, Jack H. Judy, P. J. Chen, William F. Egelhoff, and Shayne Zurn

Appl. Phys. Lett. 78, 4163 (2001); http://dx.doi.org/10.1063/1.1381031 (3 pages) | Cited 6 times

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The thermal stability of antiferromagnetic α-Fe2O3 exchange-biased bilayers and bottom giant magnetoresistive (GMR) spin valves has been investigated experimentally at various ambient temperatures. An α-Fe2O3 exchange-biased bilayer exhibited a high blocking temperature, Tb, of 390 °C, and a bottom spin valve showed stable GMR performance above 350 °C. The Tb of α-Fe2O3 exchange-biased bilayers depended strongly on the adjacent ferromagnetic material and the number of measurements. In addition, the increasing mean grain size and enhanced (104) and (110) crystalline texture of α-Fe2O3 increased Tb by up to 23%. © 2001 American Institute of Physics.
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75.47.De Giant magnetoresistance
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.50.Ee Antiferromagnetics
75.30.Et Exchange and superexchange interactions
68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
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Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Veena Misra, Greg P. Heuss, and Huicai Zhong

Appl. Phys. Lett. 78, 4166 (2001); http://dx.doi.org/10.1063/1.1380240 (3 pages) | Cited 29 times

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Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observed with Hf and Zr electrodes when subjected to anneal temperatures as low as 400 °C. The reduction in electrical thickness as observed from the capacitance–voltage measurements was attributed to the combination of (a) physical thinning of the SiO2 and (b) formation of a high-K layer. A severe instability of Zr and Hf electrodes was also observed on ZrSixOy and ZrO2 dielectrics. This behavior of Zr and Hf gates was attributed to high negative enthalpy of oxide formation and high oxygen solubility resulting in the reduction of the gate dielectric and subsequent oxygen diffusion to the gate electrode. © 2001 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

L.-Å. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A. Bojarczuk, and J. Karasinski

Appl. Phys. Lett. 78, 4169 (2001); http://dx.doi.org/10.1063/1.1381566 (3 pages) | Cited 42 times

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We report on high effective mobilities in yttrium-oxide-based n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y2O3 on top of a thin layer of interfacial SiO2. The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO2-based MOSFETs at higher fields with peak mobilities at approximately 210 cm2/V s. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ng Insulators

Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes

G. S. Wang, J. G. Cheng, X. J. Meng, J. Yu, Z. Q. Lai, J. Tang, S. L. Guo, J. H. Chu, G. Li, and Q. H. Lu

Appl. Phys. Lett. 78, 4172 (2001); http://dx.doi.org/10.1063/1.1381416 (3 pages) | Cited 13 times

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Highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures have been grown on Si(100) using chemical solution routes. X-ray diffraction analysis shows that Ba0.9Sr0.1TiO3 thin films are high (100) orientation (α100 = 0.92). Atomic force microscopy investigation shows that they have large grains about 80–200 nm. A Pt/Ba0.9Sr0.1TiO3/LaNiO3 capacitor has been fabricated and showed excellent ferroelectricity, the remnant polarization and coercive field are 10.8 μC/cm2 and 96 kV/cm, respectively. The electric field dependence of capacitance measurement shows that the capacitor has large capacitance tuning ([Cmax−Cmin]/Cmax×100%) of 63%. The Ba0.9Sr0.1TiO3 thin films have high dielectric constant (ε) of 200 at 1 MHz. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes

Y. Ding, J. S. Liu, H. X. Qin, J. S. Zhu, and Y. N. Wang

Appl. Phys. Lett. 78, 4175 (2001); http://dx.doi.org/10.1063/1.1381038 (3 pages) | Cited 57 times

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Bi4Ti3O12, (BTO) a Bi-layered perovskite oxide, shows fatigue after repeated ferroelectric polarization reversals. On the other hand, Bi3.25La0.75Ti3O12 (BLT) is fatigue free. From an extensive transmission electron microscopy study, it was found that there is a high density of antiphase boundaries (APBs) in BLT like in the fatigue-free SrBi2Ta2O9 but not in BTO. It is proposed that the existence of APBs possibly plays a key role in the fatigue-free behavior of Bi-layered perovskite oxides. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
84.32.Tt Capacitors
61.72.Mm Grain and twin boundaries
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Self-organized Cu–Ag nanocomposites synthesized by intermediate temperature ion-beam mixing

Raúl A. Enrique and Pascal Bellon

Appl. Phys. Lett. 78, 4178 (2001); http://dx.doi.org/10.1063/1.1379358 (3 pages) | Cited 11 times

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We perform an investigation of ion-beam mixing in the immiscible system Ag–Cu based on cross-sectional transmission electron microscopy. Multilayered samples consisting of ten periods of (6.7 nm Cu/11.2 nm Ag) are irradiated at temperatures ranging from 25 to 225 °C with normally incident 1 MeV Kr ions to doses in the range 1–2×1016 ion/cm2, enough to reach a nonequilibrium dynamical steady state. Regardless of the irradiation temperature, extensive grain growth takes place. At intermediate temperatures, competition between thermal decomposition and irradiation mixing results in a nanometer-scale phase separation. This spontaneous decomposition demonstrates that ion-beam mixing can be used as a processing tool to synthesize nanocomposite materials. © 2001 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
61.82.Bg Metals and alloys
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.65.Cd Superlattices

Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, and B. Ebersberger

Appl. Phys. Lett. 78, 4181 (2001); http://dx.doi.org/10.1063/1.1382624 (3 pages) | Cited 25 times

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A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. © 2001 American Institute of Physics.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
72.60.+g Mixed conductivity and conductivity transitions
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Si/SiGe electron resonant tunneling diodes with graded spacer wells

D. J. Paul, P. See, R. Bates, N. Griffin, B. P. Coonan, G. Redmond, G. M. Crean, I. V. Zozoulenko, K.-F. Berggren, B. Holländer, and S. Mantl

Appl. Phys. Lett. 78, 4184 (2001); http://dx.doi.org/10.1063/1.1381042 (3 pages) | Cited 6 times

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Resonant tunneling diodes have been fabricated using graded Si1−xGex (x = 0.3→0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells

Resonant tunneling and bistability in a double barrier structure under an intense terahertz laser

C. Zhang

Appl. Phys. Lett. 78, 4187 (2001); http://dx.doi.org/10.1063/1.1381033 (3 pages) | Cited 19 times

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By using exact wave functions of an electron in a terahertz laser field, we calculated the electron resonant tunneling through a double barrier structure. It is found that the laser field has two effects on the current voltage characteristics. First, it introduces additional tunneling states through the structure due to multiple photon processes (emission, absorption, scattering). Second, it reduces the width of the bistable region. At high field strength and low frequencies, the bistability can be completely removed. This can provide a method by which to tune the bistable region in a double barrier structure. © 2001 American Institute of Physics.
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73.40.Gk Tunneling
73.23.-b Electronic transport in mesoscopic systems
72.30.+q High-frequency effects; plasma effects
78.70.Gq Microwave and radio-frequency interactions

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, and E. Muñoz

Appl. Phys. Lett. 78, 4190 (2001); http://dx.doi.org/10.1063/1.1381415 (3 pages) | Cited 11 times

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Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of 2×1010 mHz1/2 W−1 is obtained showing that low-noise devices with high sensitivity have been fabricated. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Image capture array with an organic light sensor

R. A. Street, M. Mulato, R. Lau, J. Ho, J. Graham, Z. Popovic, and J. Hor

Appl. Phys. Lett. 78, 4193 (2001); http://dx.doi.org/10.1063/1.1380733 (3 pages) | Cited 18 times

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A large-area image capture device using an organic sensor is reported. The 512×512 pixel array, with 100×100 micrometer pixel size, combines amorphous silicon matrix addressing with a continuous organic sensor. The bilayer sensor comprises a tetraphenyldiamine hole transport layer on top of a benzimidazole perylene generator layer. This combination provides high sensitivity across the visible with low dark current. We present imaging properties and in particular show that the lateral charge transport between pixels is small, and that the effective fill factor is ∼ 90%. X-ray imaging with a phosphor converter is demonstrated. © 2001 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
85.60.Bt Optoelectronic device characterization, design, and modeling
85.65.+h Molecular electronic devices
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

High-directivity planar antenna using controllable photonic bandgap material at microwave frequencies

A. de Lustrac, F. Gadot, E. Akmansoy, and T. Brillat

Appl. Phys. Lett. 78, 4196 (2001); http://dx.doi.org/10.1063/1.1382853 (3 pages) | Cited 9 times

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In this letter, we experimentally demonstrate the capability of a controllable photonic bandgap (CPBG) material to conform the emitted radiation of a planar antenna at 12 GHz. The CPBG material is a variable conductance lattice fabricated with high-frequency PIN diodes soldered along metallic stripes on dielectric printed boards. Depending on the diode bias, the emitted radiation of the antenna can be either transmitted or totally reflected by the material. In the transmission state, the antenna radiation is spatially filtered by the CPBG material in a sharp beam perpendicular to the surface of the material. © 2001 American Institute of Physics.
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84.40.Ba Antennas: theory, components and accessories
42.70.Qs Photonic bandgap materials
42.82.Gw Other integrated-optical elements and systems
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Erratum: “Robustness of ultrathin aluminum oxide dielectrics on Si(001)” [Appl. Phys. Lett. 78, 2670 (2001)]

M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk, and M. Poppeller

Appl. Phys. Lett. 78, 4199 (2001); http://dx.doi.org/10.1063/1.1380681 (1 page)

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Abstract Unavailable
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing
81.65.Mq Oxidation
68.60.Dv Thermal stability; thermal effects
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
99.10.Cd Errata
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