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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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Si/SiGe electron resonant tunneling diodes with graded spacer wells

D. J. Paul, P. See, R. Bates, N. Griffin, B. P. Coonan, G. Redmond, G. M. Crean, I. V. Zozoulenko, K.-F. Berggren, B. Holländer, and S. Mantl

Appl. Phys. Lett. 78, 4184 (2001); http://dx.doi.org/10.1063/1.1381042 (3 pages) | Cited 6 times

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Resonant tunneling diodes have been fabricated using graded Si1−xGex (x = 0.3→0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells

Resonant tunneling and bistability in a double barrier structure under an intense terahertz laser

C. Zhang

Appl. Phys. Lett. 78, 4187 (2001); http://dx.doi.org/10.1063/1.1381033 (3 pages) | Cited 19 times

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By using exact wave functions of an electron in a terahertz laser field, we calculated the electron resonant tunneling through a double barrier structure. It is found that the laser field has two effects on the current voltage characteristics. First, it introduces additional tunneling states through the structure due to multiple photon processes (emission, absorption, scattering). Second, it reduces the width of the bistable region. At high field strength and low frequencies, the bistability can be completely removed. This can provide a method by which to tune the bistable region in a double barrier structure. © 2001 American Institute of Physics.
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73.40.Gk Tunneling
73.23.-b Electronic transport in mesoscopic systems
72.30.+q High-frequency effects; plasma effects
78.70.Gq Microwave and radio-frequency interactions

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, and E. Muñoz

Appl. Phys. Lett. 78, 4190 (2001); http://dx.doi.org/10.1063/1.1381415 (3 pages) | Cited 11 times

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Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of 2×1010 mHz1/2 W−1 is obtained showing that low-noise devices with high sensitivity have been fabricated. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Image capture array with an organic light sensor

R. A. Street, M. Mulato, R. Lau, J. Ho, J. Graham, Z. Popovic, and J. Hor

Appl. Phys. Lett. 78, 4193 (2001); http://dx.doi.org/10.1063/1.1380733 (3 pages) | Cited 18 times

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A large-area image capture device using an organic sensor is reported. The 512×512 pixel array, with 100×100 micrometer pixel size, combines amorphous silicon matrix addressing with a continuous organic sensor. The bilayer sensor comprises a tetraphenyldiamine hole transport layer on top of a benzimidazole perylene generator layer. This combination provides high sensitivity across the visible with low dark current. We present imaging properties and in particular show that the lateral charge transport between pixels is small, and that the effective fill factor is ∼ 90%. X-ray imaging with a phosphor converter is demonstrated. © 2001 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
85.60.Bt Optoelectronic device characterization, design, and modeling
85.65.+h Molecular electronic devices
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

High-directivity planar antenna using controllable photonic bandgap material at microwave frequencies

A. de Lustrac, F. Gadot, E. Akmansoy, and T. Brillat

Appl. Phys. Lett. 78, 4196 (2001); http://dx.doi.org/10.1063/1.1382853 (3 pages) | Cited 9 times

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In this letter, we experimentally demonstrate the capability of a controllable photonic bandgap (CPBG) material to conform the emitted radiation of a planar antenna at 12 GHz. The CPBG material is a variable conductance lattice fabricated with high-frequency PIN diodes soldered along metallic stripes on dielectric printed boards. Depending on the diode bias, the emitted radiation of the antenna can be either transmitted or totally reflected by the material. In the transmission state, the antenna radiation is spatially filtered by the CPBG material in a sharp beam perpendicular to the surface of the material. © 2001 American Institute of Physics.
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84.40.Ba Antennas: theory, components and accessories
42.70.Qs Photonic bandgap materials
42.82.Gw Other integrated-optical elements and systems
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