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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Veena Misra, Greg P. Heuss, and Huicai Zhong

Appl. Phys. Lett. 78, 4166 (2001); http://dx.doi.org/10.1063/1.1380240 (3 pages) | Cited 29 times

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Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observed with Hf and Zr electrodes when subjected to anneal temperatures as low as 400 °C. The reduction in electrical thickness as observed from the capacitance–voltage measurements was attributed to the combination of (a) physical thinning of the SiO2 and (b) formation of a high-K layer. A severe instability of Zr and Hf electrodes was also observed on ZrSixOy and ZrO2 dielectrics. This behavior of Zr and Hf gates was attributed to high negative enthalpy of oxide formation and high oxygen solubility resulting in the reduction of the gate dielectric and subsequent oxygen diffusion to the gate electrode. © 2001 American Institute of Physics.
Show PACS
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

L.-Å. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A. Bojarczuk, and J. Karasinski

Appl. Phys. Lett. 78, 4169 (2001); http://dx.doi.org/10.1063/1.1381566 (3 pages) | Cited 42 times

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We report on high effective mobilities in yttrium-oxide-based n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y2O3 on top of a thin layer of interfacial SiO2. The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO2-based MOSFETs at higher fields with peak mobilities at approximately 210 cm2/V s. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ng Insulators

Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes

G. S. Wang, J. G. Cheng, X. J. Meng, J. Yu, Z. Q. Lai, J. Tang, S. L. Guo, J. H. Chu, G. Li, and Q. H. Lu

Appl. Phys. Lett. 78, 4172 (2001); http://dx.doi.org/10.1063/1.1381416 (3 pages) | Cited 13 times

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Highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures have been grown on Si(100) using chemical solution routes. X-ray diffraction analysis shows that Ba0.9Sr0.1TiO3 thin films are high (100) orientation (α100 = 0.92). Atomic force microscopy investigation shows that they have large grains about 80–200 nm. A Pt/Ba0.9Sr0.1TiO3/LaNiO3 capacitor has been fabricated and showed excellent ferroelectricity, the remnant polarization and coercive field are 10.8 μC/cm2 and 96 kV/cm, respectively. The electric field dependence of capacitance measurement shows that the capacitor has large capacitance tuning ([Cmax−Cmin]/Cmax×100%) of 63%. The Ba0.9Sr0.1TiO3 thin films have high dielectric constant (ε) of 200 at 1 MHz. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes

Y. Ding, J. S. Liu, H. X. Qin, J. S. Zhu, and Y. N. Wang

Appl. Phys. Lett. 78, 4175 (2001); http://dx.doi.org/10.1063/1.1381038 (3 pages) | Cited 57 times

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Bi4Ti3O12, (BTO) a Bi-layered perovskite oxide, shows fatigue after repeated ferroelectric polarization reversals. On the other hand, Bi3.25La0.75Ti3O12 (BLT) is fatigue free. From an extensive transmission electron microscopy study, it was found that there is a high density of antiphase boundaries (APBs) in BLT like in the fatigue-free SrBi2Ta2O9 but not in BTO. It is proposed that the existence of APBs possibly plays a key role in the fatigue-free behavior of Bi-layered perovskite oxides. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
84.32.Tt Capacitors
61.72.Mm Grain and twin boundaries
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