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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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Erratum: “Robustness of ultrathin aluminum oxide dielectrics on Si(001)” [Appl. Phys. Lett. 78, 2670 (2001)]

M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk, and M. Poppeller

Appl. Phys. Lett. 78, 4199 (2001); http://dx.doi.org/10.1063/1.1380681 (1 page)

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Show PACS

79.20.Rf	Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc	Kinetics of defect formation and annealing
81.65.Mq	Oxidation
68.60.Dv	Thermal stability; thermal effects
77.55.-g	Dielectric thin films
77.84.Bw	Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.Qq	Microscopic defects (voids, inclusions, etc.)
85.40.-e	Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
99.10.Cd	Errata

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25 Jun 2001

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