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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP

A. Marceaux, S. Loualiche, O. Dehaese, and B. Lambert

Appl. Phys. Lett. 78, 4065 (2001); http://dx.doi.org/10.1063/1.1381410 (3 pages) | Cited 3 times

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Excitonic saturable absorption on iron-doped InGaAs/InP multiple-quantum-well structures is studied by Fourier transform infrared spectroscopy and pump-probe measurement in the 1.55 μm wavelength range. The recovery time of the excitonic absorption bleaching is improved by iron doping and is found to vary from 7 ns on the undoped sample to 7 ps on the highest doped sample. The samples exhibit high optical switching with a differential optical transmission coefficient of more than 20% and a saturation fluence smaller than 47 μJ/cm2. Furthermore, we notice no degradation of the contrast ratio due to iron doping. © 2001 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.21.Fg Quantum wells
78.30.Fs III-V and II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy

X. Yang, J. B. Héroux, L. F. Mei, and W. I. Wang

Appl. Phys. Lett. 78, 4068 (2001); http://dx.doi.org/10.1063/1.1379787 (3 pages) | Cited 47 times

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InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N2 radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 μm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 μm InGaAsNSb/GaAs QW lasers for long-haul applications. © 2001 American Institute of Physics.
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81.07.St Quantum wells
78.67.De Quantum wells
68.65.Fg Quantum wells
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

High spatial resolution subsurface microscopy

S. B. Ippolito, B. B. Goldberg, and M. S. Ünlü

Appl. Phys. Lett. 78, 4071 (2001); http://dx.doi.org/10.1063/1.1381574 (3 pages) | Cited 68 times

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We present a high-spatial-resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited spatial resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral spatial resolution of better than 0.23 μm in subsurface inspection of Si integrated circuits at near infrared wavelengths. © 2001 American Institute of Physics.
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07.60.Pb Conventional optical microscopes
42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors

M. Kamp, J. Hofmann, A. Forchel, and S. Lourdudoss

Appl. Phys. Lett. 78, 4074 (2001); http://dx.doi.org/10.1063/1.1377623 (2 pages) | Cited 4 times

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We have fabricated short cavity lasers with deeply etched Bragg mirrors based on 1.55 μm emitting InGaAsP/InP laser structures. Continuous-wave operation has been obtained for devices with a length of 40 μm, showing threshold currents of 12 mA. The dynamic properties of the lasers were studied by measurements of the relative intensity noise (RIN). A maximum modulation frequency of 8.4 GHz was extracted from the RIN data. © 2001 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors

Ionic and electronic dark decay of holograms in LiNbO3:Fe crystals

Yunping Yang, Ingo Nee, Karsten Buse, and Demetri Psaltis

Appl. Phys. Lett. 78, 4076 (2001); http://dx.doi.org/10.1063/1.1380247 (3 pages) | Cited 16 times

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The lifetimes of nonfixed holograms in LiNbO3:Fe crystals with doping levels of 0.05, 0.138, and 0.25 wt % Fe2O3 have been measured in the temperature range from 30 to 180 °C. The time constants of the dark decay of holograms stored in crystals with doping levels of 0.05 and 0.25 wt % Fe2O3 obey an Arrhenius-type dependence on absolute temperature T, but yield two activation energies: 1.0 and 0.28 eV, respectively. For these crystals, two different dark decay mechanisms are prevailing, one of which is identified as proton compensation and the other is due to electron tunneling between sites of Fe2+ and Fe3+. The dark decay of holograms stored in crystals with the doping level of 0.138 wt % Fe2O3 is the result of a combination of both effects. © 2001 American Institute of Physics.
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42.40.Ht Hologram recording and readout methods
42.70.Ln Holographic recording materials; optical storage media
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials

Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection

J.-N. Fehr, M.-A. Dupertuis, T. P. Hessler, L. Kappei, D. Marti, P. E. Selbmann, B. Deveaud, J. L. Pleumeekers, J.-Y. Emery, and B. Dagens

Appl. Phys. Lett. 78, 4079 (2001); http://dx.doi.org/10.1063/1.1382623 (3 pages) | Cited 10 times

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Measurements of spontaneous emission from InGaAsP semiconductor optical amplifiers provide information on both the carrier density and temperature. By spatially resolving the light emitted along the active layer of the device, we find evidence of longitudinal spatial hole burning which results from amplified spontaneous emission in the structure and is modified by the injected optical signal. Under injection, we also observe pronounced asymmetry of the amplified spontaneous emission intensity from the two facets which we relate to the carrier density profile. The experimental results are in good agreement with numerical simulations. An analysis of the measured spectra reveals an unexpected very high temperature (400 K) and its decrease by at least 35 K in the middle of the device when light is injected. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Amplified spontaneous emission in active channel waveguides produced by electron-beam lithography in LiF crystals

R. M. Montereali, M. Piccinini, and E. Burattini

Appl. Phys. Lett. 78, 4082 (2001); http://dx.doi.org/10.1063/1.1381568 (3 pages) | Cited 22 times

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In this letter we report the observation of amplified spontaneous emission of the red light from LiF:F2 centers in active channel waveguides realized by electron-beam lithography in lithium fluoride crystals. Low pumping power densities have been used in quasi-continuous-wave regime at room temperature; the appreciable values of the gain coefficients, 4.67 cm−1 with an exciting power density of 0.31 W/cm2 at 458 nm, make this material a good candidate for the realization of active integrated optical devices. © 2001 American Institute of Physics.
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78.45.+h Stimulated emission
42.79.Gn Optical waveguides and couplers
61.72.J- Point defects and defect clusters

Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice

V. G. Litovchenko, D. V. Korbutyak, A. I. Bercha, Yu. V. Kryuchenko, S. G. Krylyuk, H. T. Grahn, R. Hey, and K. H. Ploog

Appl. Phys. Lett. 78, 4085 (2001); http://dx.doi.org/10.1063/1.1379985 (3 pages) | Cited 5 times

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Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T = 80 K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.55.Cr III-V semiconductors
78.67.De Quantum wells
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Surface-emitting, single-lobe operation from second-order distributed-reflector lasers with central grating phaseshift

Gunawan Witjaksono and Dan Botez

Appl. Phys. Lett. 78, 4088 (2001); http://dx.doi.org/10.1063/1.1382633 (3 pages) | Cited 12 times

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Surface-emitting diode lasers containing a second-order Bragg grating with a central phaseshift, Δϕ, of values around π are found to fundamentally favor lasing in a mode of symmetric near-field amplitude profile, which in turn provides emission in a single-lobed beam orthonormal to the surface. Devices of 500 μm long distributed-feedback (DFB) active region (λ = 0.98 μm) and 500 μm long distributed feedback reflector passive regions provide, for Δϕ = π, a surface-emitted beam pattern with 88% central-lobe power content, and external differential quantum efficiency, ηD, of 51%. Since the guided field is antisymmetric to start with, and a central π phaseshift causes two grating-outcoupled beams to be out-of-phase with each other, the net result is a single-lobed far-field pattern. The guided-field peak-to-valley (intensity) ratio, R, in the active (i.e., DFB) region is only 2, which insures single-mode operation to high powers, since the intermodal discrimination is high (⩾100 cm−1). Over a wide range in Δϕ:60°; ηD remains high (>50%) and the degree of guided-field uniformity remains low (R<2). © 2001 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Dj Gratings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

J. H. Ryou, R. D. Dupuis, G. Walter, D. A. Kellogg, N. Holonyak, D. T. Mathes, R. Hull, C. V. Reddy, and V. Narayanamurti

Appl. Phys. Lett. 78, 4091 (2001); http://dx.doi.org/10.1063/1.1382622 (3 pages) | Cited 16 times

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We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In0.5Al0.3Ga0.2P layers have a high density on the order of 1010 cm−2 and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer “equivalent growth.” These InP/In0.5Al0.3Ga0.2P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In0.5Al0.3Ga0.2P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Opal photonic crystals infiltrated with chalcogenide glasses

V. N. Astratov, A. M. Adawi, M. S. Skolnick, V. K. Tikhomirov, V. Lyubin, D. G. Lidzey, M. Ariu, and A. L. Reynolds

Appl. Phys. Lett. 78, 4094 (2001); http://dx.doi.org/10.1063/1.1380729 (3 pages) | Cited 7 times

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Composite opal structures for nonlinear applications are obtained by infiltration with chalcogenide glasses As2S3 and AsSe by precipitation from solution. Analysis of spatially resolved optical spectra reveals that the glass aggregates into submillimeter areas inside the opal. These areas exhibit large shifts in the optical stop bands by up to 80 nm, and by comparison with modelling are shown to have uniform glass filling factors of opal pores up to 40%. Characterization of the domain structure of the opals prior to infiltration by large area angle-resolved spectroscopy is an important step in the analysis of the properties of the infiltrated regions. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.40.Pg Disordered solids
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.70.Ce Glasses, quartz

Fast modulation scheme for a two laterally coupled laser diode array

G. Carpintero, H. Lamela, M. Leonés, C. Simmendinger, and O. Hess

Appl. Phys. Lett. 78, 4097 (2001); http://dx.doi.org/10.1063/1.1378806 (3 pages) | Cited 1 time

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The present letter reports a modulation scheme that takes advantage of the unique characteristics of a two laterally coupled laser diode (also known as twin stripe array) to overcome the limit on the modulation imposed by the laser’s relaxation oscillation frequency. Through the use of the rate equation description of the device we uncover the device dynamics behind the modulation scheme generating 35 ps (full width at half maximum) laser pulses at 8 Gb/s modulation rate. Our scheme relies on the fast dynamics of the phase difference, controlled by means of the current injection on each stripe. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain

W. W. Chow and H. C. Schneider

Appl. Phys. Lett. 78, 4100 (2001); http://dx.doi.org/10.1063/1.1379784 (3 pages) | Cited 12 times

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A microscopic laser theory is used to investigate gain and threshold properties in a GaAsSb quantum-well laser. Depending on the geometry of the type-II quantum-well gain region, there may be appreciable band distortions due to electron–hole charge separation. The charge separation and accompanying band distortions lead to interesting optical behaviors, such as excitation-dependent oscillator strength and band edge energies. Implications to laser operation include significant blueshift of the gain peak with increasing injection current, and inhibition of spontaneous emission, which may result in threshold current reduction. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.Fg Quantum wells
78.67.De Quantum wells

Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect

J. F. Lampin, L. Desplanque, and F. Mollot

Appl. Phys. Lett. 78, 4103 (2001); http://dx.doi.org/10.1063/1.1381030 (3 pages) | Cited 14 times

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We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz–Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling (EAS). This all-optical method does not require any external sampling probe. A typical rise time of 1.1 ps has been measured. EAS is a good candidate for use in THz characterization of ultrafast devices. © 2001 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Jq Electro-optical effects
84.40.Az Waveguides, transmission lines, striplines
06.60.Jn High-speed techniques (microsecond to femtosecond)
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Nonreciprocal transmission in a direct-bonded photorefractive Fe:LiNbO3 buried waveguide

Corin B. E. Gawith, Ping Hua, Peter G. R. Smith, and Gary Cook

Appl. Phys. Lett. 78, 4106 (2001); http://dx.doi.org/10.1063/1.1381028 (3 pages) | Cited 1 time

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We report the fabrication of a 20-μm-thick photorefractive Fe:LiNbO3 planar waveguide buried in MgO:LiNbO3 by direct bonding of precision polished surfaces. Nonreciprocal transmission measurements were performed in a 3-mm-long device with a continuous wave 532 nm frequency-doubled YAG laser source. A Fresnel-reflection-based counterpropagating beam arrangement was used to measure a relative change in optical density of approximately 2 within the waveguide, with a photorefractive response time of 4.9 ms. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.82.Et Waveguides, couplers, and arrays

Small-signal impedance characteristics of quantum-well laser structures

G. E. Giudice, D. V. Kuksenkov, and H. Temkin

Appl. Phys. Lett. 78, 4109 (2001); http://dx.doi.org/10.1063/1.1382651 (3 pages)

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Small-signal impedance characteristics of quantum-well laser structures are analyzed. A simple analytical expression for the frequency dependence of below-threshold small-signal impedance is derived and verified experimentally. It is shown that the differential carrier lifetime and quantum-well transport and capture times can be extracted from electrical impedance measurements. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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