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25 Jun 2001

Volume 78, Issue 26, pp. 4065-4199

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Self-organized Cu–Ag nanocomposites synthesized by intermediate temperature ion-beam mixing

Raúl A. Enrique and Pascal Bellon

Appl. Phys. Lett. 78, 4178 (2001); http://dx.doi.org/10.1063/1.1379358 (3 pages) | Cited 11 times

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We perform an investigation of ion-beam mixing in the immiscible system Ag–Cu based on cross-sectional transmission electron microscopy. Multilayered samples consisting of ten periods of (6.7 nm Cu/11.2 nm Ag) are irradiated at temperatures ranging from 25 to 225 °C with normally incident 1 MeV Kr ions to doses in the range 1–2×1016 ion/cm2, enough to reach a nonequilibrium dynamical steady state. Regardless of the irradiation temperature, extensive grain growth takes place. At intermediate temperatures, competition between thermal decomposition and irradiation mixing results in a nanometer-scale phase separation. This spontaneous decomposition demonstrates that ion-beam mixing can be used as a processing tool to synthesize nanocomposite materials. © 2001 American Institute of Physics.
Show PACS
81.07.Bc Nanocrystalline materials
61.82.Bg Metals and alloys
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.65.Cd Superlattices

Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, and B. Ebersberger

Appl. Phys. Lett. 78, 4181 (2001); http://dx.doi.org/10.1063/1.1382624 (3 pages) | Cited 25 times

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A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. © 2001 American Institute of Physics.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
72.60.+g Mixed conductivity and conductivity transitions
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