APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Jan 2001

Volume 78, Issue 2, pp. 139-257

Return to All Sections
back to top
RSS Feeds

Electronic structure of cubic silicon–carbide doped by 3d magnetic ions

V. A. Gubanov, C. Boekema, and C. Y. Fong

Appl. Phys. Lett. 78, 216 (2001); http://dx.doi.org/10.1063/1.1336813 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the electronic properties of cubic silicon–carbide (3C-SiC) doped with Cr, Mn, Fe, and Co magnetic atoms using the tight-binding linear combination of muffin-tin orbitals with atomic sphere approximation method. By directly comparing the difference of the total energy between a vacancy and a dopant filling the vacant site, we found that the Mn doped at C site gains the least energy as compared to the other cases. Heavier Fe and Co atoms appear to be nonmagnetic. For lighter Cr and Mn atoms at the Si site, the dopings result in 1.6 μB (Bohr magneton) for Cr and 0.7 μB for Mn, respectively. The magnetic moment for Cr atom substituting a C atom is 0.907 μB. 3d down spin hole states exist, but the mobility associated with these states is not expected to be large. Photoluminescence measurements are suggested to probe the narrow 3d structures in the gap. © 2001 American Institute of Physics.
Show PACS
71.55.Ht Other nonmetals
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities
78.55.Hx Other solid inorganic materials

X-ray analysis of spontaneous lateral modulation in (InAs)n/(AlAs)m short-period superlattices

J. H. Li, V. Holý, Z. Zhong, J. Kulik, S. C. Moss, A. G. Norman, A. Mascarenhas, J. L. Reno, and D. M. Follstaedt

Appl. Phys. Lett. 78, 219 (2001); http://dx.doi.org/10.1063/1.1338499 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lateral composition modulation in (InAs)n/(AlAs)m short-period superlattices was studied by means of synchrotron x-ray diffraction. By choosing specific diffraction vectors having a large component closely parallel to the modulation direction, we are able to observe a number of lateral satellite peaks around the zero-order short-period superlattice peak. A model, incorporating both composition and strain, is used to simulate the intensities of these satellites. Our results provide a quantitative fit and permit the evaluation of the composition amplitude. © 2001 American Institute of Physics.
Show PACS
68.65.Cd Superlattices
61.05.cp X-ray diffraction
68.60.Bs Mechanical and acoustical properties

Electrical properties of p-type GaN:Mg codoped with oxygen

R. Y. Korotkov, J. M. Gregie, and B. W. Wessels

Appl. Phys. Lett. 78, 222 (2001); http://dx.doi.org/10.1063/1.1335542 (3 pages) | Cited 33 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to 2×1018 cm−3 at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ω cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from 170±5 meV in Mg-doped films to 135±5 meV upon oxygen doping. The higher hole concentration results in part from a decrease in the ionization energy of the acceptor. © 2001 American Institute of Physics.
Show PACS
72.80.Ey III-V and II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Eq III-V semiconductors

Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2 films

Enrique Miranda and Jordi Suñé

Appl. Phys. Lett. 78, 225 (2001); http://dx.doi.org/10.1063/1.1339259 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an analytic model for the soft breakdown failure mode in ultrathin SiO2 films based on the conduction theory through quantum point contacts. The breakdown path across the oxide is represented by a three-dimensional constriction in which, due to the lateral confinement of the electron wave functions, discrete transverse energy levels arise. In the longitudinal direction, such levels are viewed by the incoming electrons as effective potential barriers, which can be treated using the one-dimensional tunneling formalism. In addition, it is shown that our mesoscopic approach is also consistent with the hard breakdown conduction mode. © 2001 American Institute of Physics.
Show PACS
73.61.Ng Insulators
73.23.-b Electronic transport in mesoscopic systems

Ion-modulated ambipolar electrical conduction in thin-film transistors based on amorphous conjugated polymers

X. Linda Chen, Zhenan Bao, J. Hendrik Schön, Andrew J. Lovinger, Yen-Yi Lin, Brian Crone, Ananth Dodabalapur, and Bertram Batlogg

Appl. Phys. Lett. 78, 228 (2001); http://dx.doi.org/10.1063/1.1339849 (3 pages) | Cited 20 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Through gate-modulated electrochemical doping, ambipolar operation in thin-film transistors (TFTs) can be realized in air with solution processable conjugated polymers. Unlike other typical organic TFTs, which rely on high crystallinity for better charge transport, these electrochemically-doped transistors operate under a different mechanism and show very high current output even with completely amorphous polymers. © 2001 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

T. Henkel, Y. Tanaka, N. Kobayashi, H. Tanoue, and S. Hishita

Appl. Phys. Lett. 78, 231 (2001); http://dx.doi.org/10.1063/1.1335850 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500–1700 °C. Beryllium is suggested to diffuse via interstitial sites. © 2001 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.up Other materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close