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8 Jan 2001

Volume 78, Issue 2, pp. 139-257

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Theoretical investigation of high temperature IV–VI compound continuous wave midinfrared vertical cavity surface emitting lasers

S. Khosravani and Z. Shi

Appl. Phys. Lett. 78, 139 (2001); http://dx.doi.org/10.1063/1.1337626 (3 pages) | Cited 13 times

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Theoretical investigations on the optically pumped IV-VI mid-infrared vertical-cavity surface emitting lasers were made. Key parameters such as Auger recombination and heat dissipation were identified and maximum operating temperature, peak output power, and threshold pumping power were simulated. Unlike other band-to-band mid-IR laser materials, Auger recombination does not limit IV-VI diode lasers to operate at room temperature in continuous wave (cw) mode. However, insufficient heat dissipation is the dominant factor in preventing laser operation at room temperature. The calculated maximum cw operation temperature for a simple active layer design was 282 K and could be further improved for more advanced structures such as quantum well lasers. These results indicate that such lasers are promising for thermoelectrically cooled spectroscopic systems. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Pk Continuous operation

100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

Y. Kanamori, K. Hane, H. Sai, and H. Yugami

Appl. Phys. Lett. 78, 142 (2001); http://dx.doi.org/10.1063/1.1339845 (2 pages) | Cited 107 times

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An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis. © 2001 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
78.40.Fy Semiconductors
81.65.Cf Surface cleaning, etching, patterning

Simultaneous generation of red, green, and blue continuous-wave laser radiation in Nd3+-doped aperiodically poled lithium niobate

J. Capmany

Appl. Phys. Lett. 78, 144 (2001); http://dx.doi.org/10.1063/1.1338495 (3 pages) | Cited 35 times

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Simultaneous generation of red, green, and blue continuous-wave laser radiation in a Nd3+-doped aperiodically poled lithium-niobate crystal is reported. Red (686 nm) and green (542 nm) are obtained by self-frequency-doubling fundamental infrared laser lines at 1084 and 1372 nm oscillating simultaneously. Blue (441 nm) is obtained by self-sum-frequency mixing of end-pump laser radiation at 744 nm and the fundamental laser line at 1084 nm. Other laser lines at 605 nm (orange) and 482 nm (blue) are simultaneously obtained by self-sum-frequency mixing of both infrared fundamentals and by self-sum-frequency mixing of pump laser radiation with the remaining fundamental line at 1372 nm, respectively. A weaker violet (372 nm) laser emission results from frequency doubling of the pump radiation. © 2001 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.60.Pk Continuous operation

Quantum-cascade lasers based on a bound-to-continuum transition

Jérôme Faist, Mattias Beck, Thierry Aellen, and Emilio Gini

Appl. Phys. Lett. 78, 147 (2001); http://dx.doi.org/10.1063/1.1339843 (3 pages) | Cited 88 times

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A quantum-cascade structure combining the advantages of the three-quantum well and superlattice active regions is demonstrated. In these devices, the emission occurs between a state localized close to the injection barrier and a miniband. A low threshold current density (3.6 kA/cm2), large slope efficiency (200 mW/A for 35 periods), and peak power (700 mW) are achieved at 30 °C while a peak power of 90 mW is obtained at temperatures as high as 150 °C. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
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