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15 Jan 2001

Volume 78, Issue 3, pp. 261-388

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High resolution eddy current microscopy

M. A. Lantz, S. P. Jarvis, and H. Tokumoto

Appl. Phys. Lett. 78, 383 (2001); http://dx.doi.org/10.1063/1.1339840 (3 pages) | Cited 8 times

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We describe a sensitive scanning force microscope based technique for measuring local variations in resistivity by monitoring changes in the eddy current induced damping of a cantilever with a magnetic tip oscillating above a conducting sample. To achieve a high sensitivity, we used a cantilever with an FeNdBLa particle mounted on the tip. Resistivity measurements are demonstrated on a silicon test structure with a staircase doping profile. Regions with resistivities of 0.0013, 0.0041, and 0.022 Ω cm are clearly resolved with a lateral resolution of approximately 180 nm. For this range of resistivities, the eddy current induced damping is found to depend linearly on the sample resistivity. © 2001 American Institute of Physics.
Show PACS
07.79.Pk Magnetic force microscopes
81.70.Ex Nondestructive testing: electromagnetic testing, eddy-current testing
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy

Lequn Liu, Jixin Yu, and J. W. Lyding

Appl. Phys. Lett. 78, 386 (2001); http://dx.doi.org/10.1063/1.1339260 (3 pages) | Cited 24 times

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The lack of surface states within the band gap of the perfect Si(100)2×1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this letter, boron-induced features on the Si(100)2×1:H surface are studied by ultrahigh vacuum scanning tunneling microscopy. Filled state images show hillock features while empty state images show local depressions associated with dopants. Furthermore, the amplitudes of these hillock features naturally group such that at least three subsurface layers can be identified. Current image tunneling spectroscopy is performed to study the electronic structure of the boron-induced features, which are explained by a simple model based on tip-induced band bending. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultrasmall electronic device structures. © 2001 American Institute of Physics.
Show PACS
61.72.S- Impurities in crystals
61.72.uf Ge and Si
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
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