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NANOSCALE SCIENCE AND DESIGN

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Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition

Kazuhiko Matsumoto, Seizo Kinosita, Yoshitaka Gotoh, Tetsuo Uchiyama, Scott Manalis, and Calvin Quate

Appl. Phys. Lett. 78, 539 (2001); http://dx.doi.org/10.1063/1.1343470 (2 pages) | Cited 27 times

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A carbon-nanotube field emitter which has single-wall carbon nanotubes with a diameter of 1–2 nm grown directly onto the Si tips by thermal chemical vapor deposition was developed. Owing to the 10–20 times smaller diameter of the nanotube than the conventional silicon (Si) tip, the fabricated carbon-nanotube field emitter showed an ultralow threshold voltage of 10 V for the field emission of electrons, which is more than ten times smaller value than the conventional Si emitter. © 2001 American Institute of Physics.

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81.07.De	Nanotubes
85.35.Kt	Nanotube devices
85.65.+h	Molecular electronic devices
73.61.Wp	Fullerenes and related materials
79.70.+q	Field emission, ionization, evaporation, and desorption
68.55.-a	Thin film structure and morphology
81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

DEVICE PHYSICS

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Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers

Laura M. Giovane, Hsin-Chiao Luan, Anuradha M. Agarwal, and Lionel C. Kimerling

Appl. Phys. Lett. 78, 541 (2001); http://dx.doi.org/10.1063/1.1341230 (3 pages) | Cited 48 times

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A correlation between bulk leakage current density and threading dislocation density in silicon–germanium mesa-isolated diodes fabricated on relaxed graded buffer layers is presented. Si_0.75Ge_0.25 p-i-n diodes were grown on SiGe graded buffers with different grading rates. Graded buffers with different grading rates yielded “virtual substrates” with varying densities of threading dislocations. Bulk leakage current densities were differentiated from surface leakage currents by using p-i-n diodes with different areas. We demonstrate that the increase in bulk leakage current density in SiGe p-i-n diodes can be modeled by generation processes assisted by deep levels related to threading dislocations. © 2001 American Institute of Physics.

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85.30.Kk	Junction diodes
61.72.Ff	Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.30.De	Semiconductor-device characterization, design, and modeling

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Application of an ultrathin LiF/Al bilayer in organic surface-emitting diodes

L. S. Hung, C. W. Tang, M. G. Mason, P. Raychaudhuri, and J. Madathil

Appl. Phys. Lett. 78, 544 (2001); http://dx.doi.org/10.1063/1.1327273 (3 pages) | Cited 173 times

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Organic surface-emitting diodes have been constructed with a multilayer stacked cathode consisting of (1) an ultrathin LiF/Al bilayer acting as an effective electron injector, (2) an optically low-loss and electrically conducting silver intermediate layer for sheet resistance reduction, and (3) a transparent and nonconducting capping layer for refractive index matching to optimize optical transmission. The entire cathode structure is prepared by conventional thermal evaporation without incurring radiation damage, and the resulting organic surface-emitting diodes exhibit superior electrical and optical characteristics. © 2001 American Institute of Physics.

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85.60.Jb	Light-emitting devices
42.79.Wc	Optical coatings
78.60.Fi	Electroluminescence
78.66.-w	Optical properties of specific thin films

INTERDISCIPLINARY AND GENERAL PHYSICS

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Optically driven micromachine elements

M. E. J. Friese, H. Rubinsztein-Dunlop, J. Gold, P. Hagberg, and D. Hanstorp

Appl. Phys. Lett. 78, 547 (2001); http://dx.doi.org/10.1063/1.1339995 (3 pages) | Cited 62 times

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We report on a proof of principle demonstration of an optically driven micromachine element. Optical angular momentum is transferred from a circularly polarized laser beam to a birefringent particle confined in an optical tweezers trap. The optical torque causes the particle to spin at up to 350 Hz, and this torque is harnessed to drive an optically trapped microfabricated structure. We describe a photolithographic method for producing the microstructures and show how a light driven motor could be used in a micromachine system. © 2001 American Institute of Physics.

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42.82.Cr	Fabrication techniques; lithography, pattern transfer
37.10.Vz	Mechanical effects of light on atoms, molecules, and ions
85.85.+j	Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

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Thermally stimulated current method applied on diodes with high concentration of deep trapping levels

I. Pintilie, L. Pintilie, M. Moll, E. Fretwurst, and G. Lindstroem

Appl. Phys. Lett. 78, 550 (2001); http://dx.doi.org/10.1063/1.1335852 (3 pages) | Cited 11 times

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We propose an improved method of thermally stimulated currents (TSC) spectra analysis in the case of diodes having a concentration of traps higher than that of doping impurities. Beside the calculation of trap concentrations from TSC peaks analysis, the method allows us to evaluate the density and the type of the very deep trapping level which, due to the contribution of leakage current, can not be detected in a real TSC experiment. The proposed method is applied to a p⁺-n Silicon diode irradiated with 1.82×10¹³neutrons/cm². © 2001 American Institute of Physics.

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85.30.Kk	Junction diodes
73.50.Gr	Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.80.Hg	Neutron radiation effects

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Acoustic imaging by second harmonic of phase-conjugate wave in inhomogeneous medium

Yu. Pyl’nov, P. Pernod, and V. Preobrazhensky

Appl. Phys. Lett. 78, 553 (2001); http://dx.doi.org/10.1063/1.1342205 (3 pages) | Cited 9 times

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Application of the supercritical magnetoelastic wave phase conjugation to harmonic imaging in acoustic C-scan microscopy is demonstrated. Second-harmonic generation by phase-conjugate wave is used for improvement of resolution of an imaging system. Possibility to compensate phase aberrations introduced in harmonic image by inhomogeneity of propagation medium is shown experimentally and explained theoretically. © 2001 American Institute of Physics.

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43.58.Ls	Acoustical lenses and microscopes
43.25.Ba	Parameters of nonlinearity of the medium
43.80.Qf	Medical diagnosis with acoustics
43.35.Rw	Magnetoacoustic effect; oscillations and resonance
46.25.Hf	Thermoelasticity and electromagnetic elasticity (electroelasticity, magnetoelasticity)
87.57.C-	Image quality
87.63.D-	Ultrasonography

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Performance of cryogenic microbolometers and calorimeters with on-chip coolers

D. V. Anghel, A. Luukanen, and J. P. Pekola

Appl. Phys. Lett. 78, 556 (2001); http://dx.doi.org/10.1063/1.1339261 (3 pages) | Cited 8 times

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Astronomical observations of cosmic sources in the far-infrared and x-ray bands require extreme sensitivity. The most sensitive detectors are cryogenic bolometers and calorimeters operating typically at about 100 mK. The last stage of cooling (from 300 to 100 mK) often poses significant difficulties in space-borne experiments, both in system complexity and in reliability. We address the possibility of using refrigeration based on normal metal/insulator/superconductor (NIS) tunnel junctions as the last stage cooler for cryogenic thermal detectors. We compare two possible schemes: direct cooling of the electron gas of the detector with the aid of NIS tunnel junctions and the indirect cooling method, when the detector lattice is cooled by the refrigerating system, while the electron gas temperature is decreased by electron–phonon interaction. The latter method is found to allow at least an order of magnitude improvement in detector noise equivalent power compared to direct electron cooling. © 2001 American Institute of Physics.

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07.20.Fw	Calorimeters
07.57.Kp	Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
95.55.Rg	Photoconductors and bolometers
74.45.+c	Proximity effects; Andreev reflection; SN and SNS junctions

ERRATA

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Erratum: “Transport properties of GaAs_1−xN_x thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 77, 3794 (2000)]

R. K. Ahrenkiel, S. W. Johnston, B. M. Keyes, D. J. Friedman, and S. M. Vernon

Appl. Phys. Lett. 78, 559 (2001); http://dx.doi.org/10.1063/1.1346587 (1 page)

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Abstract Unavailable

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73.61.Ey	III-V semiconductors
81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz	Photoconduction and photovoltaic effects
71.20.Nr	Semiconductor compounds
99.10.Cd	Errata

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22 Jan 2001

Volume 78, Issue 4, pp. 393-559

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