APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

22 Jan 2001

Volume 78, Issue 4, pp. 393-559

Return to All Sections
back to top
RSS Feeds

Origin of the “up,” “down” hysteresis offsets observed from polarization-graded ferroelectric materials

Whitney Fellberg, Joseph Mantese, Norman Schubring, and Adolph Micheli

Appl. Phys. Lett. 78, 524 (2001); http://dx.doi.org/10.1063/1.1342045 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
“Up” and “down” hysteresis offsets were observed in polarization-graded ferroelectrics. The polarization gradients were achieved by imposing temperature gradients across a bulk ferroelectric material near its Curie temperature. In the absence of temperature gradients, no hysteresis offsets were observed, ruling out extraneous sources as the cause of the aberrant behavior, thereby establishing the origin of the offsets in the class of polarization-graded ferroelectric devices. © 2001 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point

Dielectric nonlinearities in ferroelectric thin-film heterostructures

M. Tyunina, J. Levoska, S. Leppävuori, and A. Sternberg

Appl. Phys. Lett. 78, 527 (2001); http://dx.doi.org/10.1063/1.1342051 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The influence of the film–electrode interface on the ac-electric field dependence of the dielectric permittivity in ferroelectric thin-film heterostructures has been studied. The dielectric nonlinearities in epitaxial thin-film heterostructures of ferroelectric PbZr0.65Ti0.35O3 and relaxor ferroelectric (PbMg1/3Nb2/3O3)0.68–(PbTiO3)0.32 were measured at subswitching fields. A dramatic difference between the dielectric nonlinearities possessed by ferroelectric films and those exhibited by the corresponding heterostructures was revealed both by model evaluations and experimental observations. In the heterostructures, due to the presence of an interface layer the dielectric nonlinearities can be considerably suppressed and their type can be changed compared to those in the films. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.Fm Switching phenomena

In-plane polarization states and their instabilities in polydomain epitaxial ferroelectric thin films

V. G. Koukhar, N. A. Pertsev, and R. Waser

Appl. Phys. Lett. 78, 530 (2001); http://dx.doi.org/10.1063/1.1338960 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A Landau–Ginsburg–Devonshire-type thermodynamic theory is used to describe epitaxial ferroelectric films with dense laminar domain structures, where spontaneous polarizations in both domains are oriented in the film plane. For PbTiO3 films, it is found that, at positive misfit strains, the domain patterning transforms the orthorhombic aa phase, which is stable in single-domain films, into a pseudotetragonal a1/a2/a1/a2 polydomain state. In BaTiO3 films, the latter is further replaced at low temperatures by a polydomain aa1/aa2/aa1/aa2 state. With decreasing misfit strain, both a1/a2/a1/a2 and aa1/aa2/aa1/aa2 patterns become unstable with respect to the appearance of polarization component orthogonal to film surfaces. This results in the formation of polydomain states in BaTiO3 films, which do not exist in bulk crystals. The stability ranges of various states in the misfit strain-temperature phase diagram are determined. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films

B. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, X. Zeng, W. Si, and X. X. Xi

Appl. Phys. Lett. 78, 533 (2001); http://dx.doi.org/10.1063/1.1340863 (3 pages) | Cited 96 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1−xSrxTiO3 (x = 0.1–0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D = in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability. © 2001 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close