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22 Jan 2001

Volume 78, Issue 4, pp. 393-559

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Monolithic integration of a quantum-well infrared photodetector array with a read-out circuit

D. Mandelik, M. Schniederman, V. Umansky, and I. Bar-Joseph

Appl. Phys. Lett. 78, 472 (2001); http://dx.doi.org/10.1063/1.1340862 (3 pages) | Cited 2 times

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We demonstrate the feasibility of monolithic integration of a quantum-well infrared detector and a read-out circuit on the same GaAs/AlGaAs crystal. Charge storage capability of 2×107 electrons in a 50×50 μm2 pixel is obtained. The operation of a 5×5 test array is reported, performing all the basic functions of a practical focal plane array. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.63.Hs Quantum wells
78.67.De Quantum wells
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Large and abrupt optical band gap variation in In-doped ZnO

Kwang Joo Kim and Young Ran Park

Appl. Phys. Lett. 78, 475 (2001); http://dx.doi.org/10.1063/1.1342042 (3 pages) | Cited 63 times

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Optical absorption properties of n-type In-doped ZnO films were investigated by spectroscopic ellipsometry for varying carrier concentration. The fundamental optical band gap (E0) edge of the compound showed a blueshift below the carrier concentration n0 = 5×1019 cm−3, which can be explained in terms of the Burstein–Moss band-filling effect. An abrupt jump of the E0 edge from blue- to redshift was observed as the carrier concentration increased beyond n0. It is interpreted as due to a merging of the donor and conduction bands of the compound near n0. The redshift increases quite linearly with the carrier concentration, reaching 600 meV for n = 1.2×1020 cm−3. Such linear increase is interpreted as mainly due to a band gap narrowing caused by impurity-induced potential fluctuations. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
71.20.Nr Semiconductor compounds
73.61.Ga II-VI semiconductors
78.40.Fy Semiconductors
71.55.Gs II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Nuo Fu Chen, Xingru Zhong, Lanying Lin, Mian Zhang, Yunsheng Wang, Xiwei Bai, and Jing Zhao

Appl. Phys. Lett. 78, 478 (2001); http://dx.doi.org/10.1063/1.1342201 (2 pages)

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Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. © 2001 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
81.10.Mx Growth in microgravity environments
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
85.30.Tv Field effect devices

Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

Ph. Ebert, C. Domke, and K. Urban

Appl. Phys. Lett. 78, 480 (2001); http://dx.doi.org/10.1063/1.1341219 (3 pages) | Cited 16 times

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We demonstrate the possibility of simultaneous determination of the type and electrical charge state of dislocations in GaAs by cross-sectional scanning tunneling microscopy (STM). The methodology is demonstrated for a dissociated perfect dislocation in highly Si-doped GaAs(110) surfaces. The STM images of the dislocation penetrating GaAs cleavage surface show that both partial dislocation cores as well as the stacking fault between the two partial dislocation cores are negatively charged. © 2001 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.35.Dv Composition, segregation; defects and impurities
61.72.Nn Stacking faults and other planar or extended defects

Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base

Tohru Oka, Tomoyoshi Mishima, and Makoto Kudo

Appl. Phys. Lett. 78, 483 (2001); http://dx.doi.org/10.1063/1.1343853 (3 pages) | Cited 10 times

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We have developed GaAs heterojunction bipolar transistors (HBTs) with low turn-on voltage by using pseudomorphic GaAsSb as the base layer. The turn-on voltage of GaAs/GaAs0.91Sb0.09 HBT is 0.10 V lower than that of InGaP/GaAs HBT. The lower turn-on voltage is attributed to the smaller band gap of the GaAsSb base layer, indicating that GaAsSb is useful material for reducing turn-on voltage of GaAs HBTs. The current gain of 20 is obtained for GaAs/GaAs0.91Sb0.09 HBT, which is larger than those of previously reported GaAs/GaAsSb HBTs owing to the pseudomorphic, fully strained GaAsSb with no misfit dislocations. The knee voltage of 0.47 V is attained at the collector current density of 5×104 A/cm2. These results indicate that GaAs/GaAsSb HBTs have a great potential for reducing operating voltage and power dissipation. © 2001 American Institute of Physics.
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85.30.Pq Bipolar transistors
81.05.Ea III-V semiconductors

Enhanced tunnel current through thin oxide due to single-defect scattering

Y. Fu, M. Willander, P. Lundgren, and E. Aderstedt

Appl. Phys. Lett. 78, 486 (2001); http://dx.doi.org/10.1063/1.1338958 (3 pages) | Cited 1 time

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We have studied the conduction current from an n-silicon substrate to n+-polycrystalline-silicon gate through an ultrathin oxide layer. Carrier transmission through the thin oxide layer is enhanced by the presence of an ionized impurity in the oxide layer. In addition to the normal direct tunnel current, the Coulomb potential of the ionized impurity provides extra conduction channels for carriers in the n-silicon substrate to transmit to the polycrystalline-silicon gate. It has been found that the ratio between the conduction current through the extra conduction channels and the direct tunnel current can be as large as 1.9. The exact value of the ratio depends on the location of the charge in the oxide layer. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
71.55.Ht Other nonmetals
72.20.Dp General theory, scattering mechanisms

Microwave transmission through a two-dimensional, isotropic, left-handed metamaterial

R. A. Shelby, D. R. Smith, S. C. Nemat-Nasser, and S. Schultz

Appl. Phys. Lett. 78, 489 (2001); http://dx.doi.org/10.1063/1.1343489 (3 pages) | Cited 351 times

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We present experimental data, numerical simulations, and analytical transfer-matrix calculations for a two-dimensionally isotropic, left-handed metamaterial (LHM) at X-band microwave frequencies. A LHM is one that has a frequency band with simultaneously negative εeff(ω) and μeff(ω), thereby having real values of index of refraction and wave vectors, and exhibiting extended wave propagation over that band. Our physical demonstration of a two-dimensional isotropic LHM will now permit experiments to verify some of the explicit predictions of reversed electromagnetic-wave properties including negative index of refraction as analyzed by Veselago [Usp. Fiz. Nauk 92, 517 (1964), Sov. Phys. Usp. 10, 509 (1968)]. © 2001 American Institute of Physics.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation

Snapback behavior of the postbreakdown I–V characteristics in ultrathin SiO2 films

T. P. Chen, M. S. Tse, and X. Zeng

Appl. Phys. Lett. 78, 492 (2001); http://dx.doi.org/10.1063/1.1342214 (3 pages) | Cited 16 times

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With the I–V measurement technique that forced a current to an ultrathin gate oxide and measured the voltage drop, a snapback phenomenon, i.e., the gate oxide was switched from a higher-impedance state to a lower-impedance state suddenly, was observed during the postbreakdown I–V measurement. The snapback could be triggered at a very low measurement current. Single or multiple snapbacks have been observed, and it was found that the occurrence of snapback was a random event. The snapback is explained in terms of the formation of an additional percolation path due to the neutralization of negatively charged traps or the generation of neutral electron traps at certain strategic positions during the measurement. © 2001 American Institute of Physics.
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73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Infrared multispectral detection using Si/SixGe1−x quantum well infrared photodetectors

D. Krapf, B. Adoram, J. Shappir, A. Sa’ar, S. G. Thomas, J. L. Liu, and K. L. Wang

Appl. Phys. Lett. 78, 495 (2001); http://dx.doi.org/10.1063/1.1343498 (3 pages) | Cited 10 times

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A modified p-type Si/SiGe quantum well infrared photodetector for multispectral infrared imaging applications is demonstrated. In order to improve the detector’s performances we have used a SiGe emitter and a low-temperature wet passivation process that give rise to a reduced dark current, even at relatively high bias voltages. Multispectral photoresponse at the long, mid and short wavelength infrared atmospheric windows was observed. The response peaks are assigned to the various classes of intervalence band transitions in the quantum wells and in the SiGe emitter layers. © 2001 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.21.Fg Quantum wells
81.07.St Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.65.Rv Passivation
72.40.+w Photoconduction and photovoltaic effects
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