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22 Jan 2001

Volume 78, Issue 4, pp. 393-559

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Erratum: “Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 77, 3794 (2000)]

R. K. Ahrenkiel, S. W. Johnston, B. M. Keyes, D. J. Friedman, and S. M. Vernon

Appl. Phys. Lett. 78, 559 (2001); http://dx.doi.org/10.1063/1.1346587 (1 page)

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Abstract Unavailable
Show PACS
73.61.Ey III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
71.20.Nr Semiconductor compounds
99.10.Cd Errata
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