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22 Jan 2001

Volume 78, Issue 4, pp. 393-559

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Layered chiral metallic microstructures with inductive coupling

Yuri Svirko, Nikolay Zheludev, and Michail Osipov

Appl. Phys. Lett. 78, 498 (2001); http://dx.doi.org/10.1063/1.1342210 (3 pages) | Cited 40 times

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A bilayered quasiplanar metallic microstructure, comprising an ensemble of fully metallic “molecules” with inductive coupling between two parts of the molecule, is predicted to show strong optical rotatory power. © 2001 American Institute of Physics.
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42.25.Ja Polarization
78.20.Ek Optical activity
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Interfacial capacitance effects in magnetic tunneling junctions

G. Landry, Y. Dong, J. Du, X. Xiang, and John Q. Xiao

Appl. Phys. Lett. 78, 501 (2001); http://dx.doi.org/10.1063/1.1336816 (3 pages) | Cited 18 times

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We have fabricated magnetic tunneling junctions by oxidizing a wedge-shaped aluminum layer to produce junctions with ideal oxidized as well as under and over oxidized junctions on a single wafer. By investigating the capacitance spectra, we are able to study the effects due to interface charge accumulation. The electron–electron interaction among accumulated interface charges leads to a voltage drop inside the magnetic electrodes, resulting in the measured capacitance differing from the geometric capacitance. We have extracted an interfacial capacitance of 16 μF/cm2 per interface and a screening length of 0.55 Å for FeNi electrodes. © 2001 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Enhanced initial susceptibility in small amorphous disks

Amikam Aharoni

Appl. Phys. Lett. 78, 504 (2001); http://dx.doi.org/10.1063/1.1342052 (2 pages) | Cited 3 times

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A highly enhanced initial susceptibility is predicted theoretically for thin, amorphous ferromagnetic films when they are patterned as separate disks of appropriate dimensions. The relation between the required disk radius and the film thickness is given as a function of the exchange constant and the saturation magnetization of the amorphous material. © 2001 American Institute of Physics.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Et Exchange and superexchange interactions

Josephson plasma observed in underdoped (110) YBa2Cu3O7−δ films

X. G. Qiu, H. Koinuma, M. Iwasaki, T. Itoh, A. K. Sarin Kumar, M. Kawasaki, E. Saitoh, Y. Tokura, K. Takehana, G. Kido, and Y. Segawa

Appl. Phys. Lett. 78, 506 (2001); http://dx.doi.org/10.1063/1.1342208 (3 pages) | Cited 4 times

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(110) oriented YBa2Cu3O7−δ thin films have been epitaxially grown on vicinal (110)SrTiO3 substrates by pulsed-laser deposition. Films with different oxygen deficiencies were obtained by annealing under various oxygen ambient. These films have very smooth surface and with their c axis aligned in one direction in the substrate plane. Electronic transport and polarized far-infrared reflectivity measurements reveal the unique features of the c-axis charge dynamics. A c-axis far-infrared reflectivity edge associated with the Josephson plasma in the superconducting state is observed. Our results demonstrate the potential usage of (110) thin films for the investigation of intrinsic interlayer charge dynamics as well as device application of high Tc superconductors. © 2001 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.50.+r Tunneling phenomena; Josephson effects
74.25.F- Transport properties
81.15.Fg Pulsed laser ablation deposition
74.25.Gz Optical properties

Single-crystal magnetotunnel junctions

W. Wulfhekel, M. Klaua, D. Ullmann, F. Zavaliche, J. Kirschner, R. Urban, T. Monchesky, and B. Heinrich

Appl. Phys. Lett. 78, 509 (2001); http://dx.doi.org/10.1063/1.1342778 (3 pages) | Cited 66 times

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We have grown epitaxial single-crystal magnetotunnel junctions using Fe(001) substrates, MgO(001) spacers and Fe top electrodes. We have used scanning tunneling microscopy and atomic force microscopy to measure the tunneling characteristics as a function of position and demonstrated that local tunneling can be obtained such that the buried MgO can be characterized with nm resolution. Local I(V) curves revealed that most of the area had intrinsic tunneling properties corresponding to the proper MgO tunneling barrier. A small fraction of the scanned areas showed localized spikes in the tunneling current which are most likely caused by defects in the MgO. © 2001 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
75.45.+j Macroscopic quantum phenomena in magnetic systems
85.75.Dd Magnetic memory using magnetic tunnel junctions
68.37.Ps Atomic force microscopy (AFM)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.72.-y Defects and impurities in crystals; microstructure
68.35.Ct Interface structure and roughness

Atomic ordering in the LaFe0.5Mn0.5O3 solid solution film

K. Ueda, Y. Muraoka, H. Tabata, and T. Kawai

Appl. Phys. Lett. 78, 512 (2001); http://dx.doi.org/10.1063/1.1343844 (3 pages) | Cited 15 times

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LaFe0.5Mn0.5O3 solid solution films have been formed on SrTiO3 (111) substrates using a pulsed laser deposition technique and their magnetic properties have been examined. The films showed ferromagnetic (or ferromagnetic) behavior with a Curie temperature of 380 K and the saturation magnetization was estimated to be about 1.5μB per magnetic ion site (B site). The x-ray photoemission spectra indicated that this behavior was due to the partial ordering of magnetic ions (Fe and Mn ions) which is caused by the charge disproportion between Fe and Mn ions under the film formation conditions. © 2001 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
68.55.-a Thin film structure and morphology
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Fg Pulsed laser ablation deposition
79.60.Dp Adsorbed layers and thin films
64.75.-g Phase equilibria

Enhanced tunnel magnetoresistance in granular nanobridges

K. Yakushiji, S. Mitani, K. Takanashi, S. Takahashi, S. Maekawa, H. Imamura, and H. Fujimori

Appl. Phys. Lett. 78, 515 (2001); http://dx.doi.org/10.1063/1.1341231 (3 pages) | Cited 50 times

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We have fabricated granular nanobridge structures consisting of electrodes separated by a nanometer-sized gap in which a thin insulating CoAlO granular film is filled, and measured the current–bias voltage characteristics in a magnetic field to investigate the spin-dependent transport. The Coulomb blockade with a clear threshold voltage (Vth) is observed at 4.2 K. Tunnel magnetoresistance (TMR) is enhanced by fabricating nanobridges. TMR shows a maximum exceeding about 30% at the voltage slightly above Vth. This enhancement is explained by the orthodox theory of single electron tunneling in ferromagnetic multiple tunnel junctions. © 2001 American Institute of Physics.
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75.47.De Giant magnetoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.23.Hk Coulomb blockade; single-electron tunneling
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Dd Nonmetallic ferromagnetic materials
75.45.+j Macroscopic quantum phenomena in magnetic systems

Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

A. Oiwa, T. Słupinski, and H. Munekata

Appl. Phys. Lett. 78, 518 (2001); http://dx.doi.org/10.1063/1.1343497 (3 pages) | Cited 46 times

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The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons. © 2001 American Institute of Physics.
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75.60.Jk Magnetization reversal mechanisms
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.70.Kw Domain structure (including magnetic bubbles and vortices)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

Ruihua Cheng, C. N. Borca, P. A. Dowben, Shane Stadler, and Y. U. Idzerda

Appl. Phys. Lett. 78, 521 (2001); http://dx.doi.org/10.1063/1.1343846 (3 pages) | Cited 11 times

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We have used laser-initiated chemical vapor deposition to grow the chromium oxide thin films through the oxidation of Cr(CO)6 in an oxygen environment. While both Cr2O3 and CrO2 are present in the film, the relative weight of each phase depends on the oxygen partial pressure. The Curie temperature of the film increases and approaches the bulk TC of CrO2 (397 K) as the partial oxygen pressure is increased. © 2001 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.50.Dd Nonmetallic ferromagnetic materials
68.55.Nq Composition and phase identification
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
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