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22 Jan 2001

Volume 78, Issue 4, pp. 393-559

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Construction of highly conductive nanowires on a DNA template

Jan Richter, Michael Mertig, Wolfgang Pompe, Ingolf Mönch, and Hans K. Schackert

Appl. Phys. Lett. 78, 536 (2001); http://dx.doi.org/10.1063/1.1338967 (3 pages) | Cited 125 times

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We present measurements of the electrical conductivity of metallic nanowires which have been fabricated by chemical deposition of a thin continuous palladium film onto single DNA molecules to install electrical functionality. The DNA molecules have been positioned between macroscopic Au electrodes and are metallized afterwards. Low-resistance electrical interfacing was obtained by pinning the nanowires at the electrodes with electron-beam-induced carbon lines. The investigated nanowires exhibit ohmic transport behavior at room temperature. Their specific conductivity is only one order of magnitude below that of bulk palladium, confirming that DNA is an ideal template for the production of electric wires, which can be utilized for the bottom-up construction of miniaturized electrical circuits. © 2001 American Institute of Physics.
Show PACS
81.07.Lk Nanocontacts
85.65.+h Molecular electronic devices
81.16.Fg Supramolecular and biochemical assembly
73.63.Rt Nanoscale contacts
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.40.Cg Contact resistance, contact potential
87.14.G- Nucleic acids

Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition

Kazuhiko Matsumoto, Seizo Kinosita, Yoshitaka Gotoh, Tetsuo Uchiyama, Scott Manalis, and Calvin Quate

Appl. Phys. Lett. 78, 539 (2001); http://dx.doi.org/10.1063/1.1343470 (2 pages) | Cited 27 times

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A carbon-nanotube field emitter which has single-wall carbon nanotubes with a diameter of 1–2 nm grown directly onto the Si tips by thermal chemical vapor deposition was developed. Owing to the 10–20 times smaller diameter of the nanotube than the conventional silicon (Si) tip, the fabricated carbon-nanotube field emitter showed an ultralow threshold voltage of 10 V for the field emission of electrons, which is more than ten times smaller value than the conventional Si emitter. © 2001 American Institute of Physics.
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81.07.De Nanotubes
85.35.Kt Nanotube devices
85.65.+h Molecular electronic devices
73.61.Wp Fullerenes and related materials
79.70.+q Field emission, ionization, evaporation, and desorption
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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