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29 Jan 2001

Volume 78, Issue 5, pp. 563-679

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Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode

Alexei A. Erchak, Daniel J. Ripin, Shanhui Fan, Peter Rakich, John D. Joannopoulos, Erich P. Ippen, Gale S. Petrich, and Leslie A. Kolodziejski

Appl. Phys. Lett. 78, 563 (2001); http://dx.doi.org/10.1063/1.1342048 (3 pages) | Cited 120 times

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Enhanced coupling to vertical radiation is obtained from a light-emitting diode using a two-dimensional photonic crystal that lies entirely inside the upper cladding layer of an asymmetric quantum well structure. A sixfold enhancement in light extraction in the vertical direction is obtained without the photonic crystal penetrating the active material. The photonic crystal is also used to couple pump light at normal incidence into the structure, providing strong optical excitation. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.82.Fv Hybrid systems

ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

J. H. Chang, J. S. Song, K. Godo, T. Yao, M. Y. Shen, and T. Goto

Appl. Phys. Lett. 78, 566 (2001); http://dx.doi.org/10.1063/1.1343475 (3 pages) | Cited 19 times

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A ZnCdTe/ZnTe/ZnMgSeTe quantum-well (QW) structure lattice matched to ZnTe is proposed for the light-emitting devices in the pure-green wavelength region. Thin ZnTe layers are inserted in between the ZnCdTe QW layer and ZnMgSeTe cladding layers, which improve the quality of the QW structure as demonstrated by its narrow photoluminescence line width (6.5 meV at 10 K). Optically pumped lasing at 552 nm at room temperature with a threshold optical power of 215 kW cm−2 is achieved. The present results clearly show the feasibility of ZnTe-based QW structures for the application to light-emitting devices in the pure-green wavelength region. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.67.De Quantum wells
42.55.Px Semiconductor lasers; laser diodes

Characteristics and discussion of self-pumped phase conjugation in a series of BaTiO3 crystals

Xinguang Xu, Zongshu Shao, Xiaodong Mu, Chenlin Du, Zhengping Wang, Haiqing Xu, and Haosu Luo

Appl. Phys. Lett. 78, 569 (2001); http://dx.doi.org/10.1063/1.1343503 (3 pages)

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This letter presents the experimental results of self-pumped phase conjugation (SPPC) in barium titanate (BaTiO3) crystals doped with Rh or Ce. It has been shown that the main parameters of SPPC depend very strongly on the concentration of dopants, the incident angles, and the cut type of the crystals. Some qualitative explanation of the experimental results are also given. © 2001 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Passively Q-switched Ho3+:Y3Al5O12 laser using a PbSe-doped glass

A. M. Malyarevich, P. V. Prokoshin, M. I. Demchuk, K. V. Yumashev, and A. A. Lipovskii

Appl. Phys. Lett. 78, 572 (2001); http://dx.doi.org/10.1063/1.1342213 (2 pages) | Cited 6 times

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Saturable absorber Q switching of Ho3+:Y3Al5O12 laser at 2.1 μm using PbSe-doped phosphate glass was demonstrated. Q-switched pulses of 22 mJ in energy and 85 ns in duration were obtained. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems

Graded doping profiles for reduction of carrier trapping in organic light-emitting devices incorporating doped polymers

Hsin-Hua Chang, Chung-Chih Wu, Cheng-Chung Yang, Chieh-Wei Chen, and Cheng-Chung Lee

Appl. Phys. Lett. 78, 574 (2001); http://dx.doi.org/10.1063/1.1344223 (3 pages) | Cited 15 times

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Dispersing emissive dopants into luminescent polymers is an effective approach to enhance luminescence and to tune emission color in organic light-emitting devices incorporating polymer films. However, the carrier trapping effect due to emissive dopants often causes deterioration of electrical characteristics. In this letter, we show that, by introducing a graded doping profile to match the carrier recombination zone in the doped polymer, the carrier trapping, and the deterioration of electrical characteristics can be minimized while the enhancement in efficiency maintains. The finite-source dye-diffusion thermal transfer is used to produce graded doping profiles into a luminescent polymer. The effectiveness of this approach has been demonstrated in both single-layer and heterostructure devices incorporating doped polymers. © 2001 American Institute of Physics.
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42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds

Optical harmonic generation in a quasi-phase-matched three-component Fibonacci superlattice LiTaO3

Y. B. Chen, C. Zhang, Y. Y. Zhu, S. N. Zhu, H. T. Wang, and N. B. Ming

Appl. Phys. Lett. 78, 577 (2001); http://dx.doi.org/10.1063/1.1344226 (3 pages) | Cited 24 times

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Optical harmonic generation in a three-component Fibonacci optical superlattice (3CFOS) is studied experimentally. Quasi-phase-matched second-harmonic spectrum and third-harmonic generation have been measured in a LiTaO3 3CFOS. Results show that the structure of the spectrum in a 3CFOS is richer than that in a two-component Fibonacci optical superlattice. The intrinsic self-similarity is shown in its Fourier spectrum. © 2001 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators

Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices

R. Akimoto, Y. Kinpara, K. Akita, F. Sasaki, and S. Kobayashi

Appl. Phys. Lett. 78, 580 (2001); http://dx.doi.org/10.1063/1.1343843 (3 pages) | Cited 29 times

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We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 μm, covering the 1.55 μm optical communication wavelengths within its absorption band width ( ∼ 250 nm), is achieved in the ZnSe/BeTe SLs with 4.5 ML-thick ZnSe layers. The intensity in photoinduced intersubband absorption increases sublinearly with pump intensity, reflecting the characteristic recombination processes of electron-hole pairs in a heterostructure with type-II band alignment. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.Cd Superlattices

Newton’s rings in near-field optics

Lori S. Goldner, Jeeseong Hwang, Garnett W. Bryant, Michael J. Fasolka, P. P. Absil, J. V. Hryniewicz, F. G. Johnson, H. Shen, and P.-T. Ho

Appl. Phys. Lett. 78, 583 (2001); http://dx.doi.org/10.1063/1.1343850 (3 pages) | Cited 3 times

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We show how Newton’s rings manifest themselves in near-field scanning optical microscopy and discuss how this effect can be used with topographic imaging to measure correlated roughness of thin films. In conventional optics, transmission through a thin nonabsorbing film depends on film thickness when multiple reflections from the film boundaries are coherent. Measurements and modeling of the transmission through thin films illuminated by a near-field probe show that these oscillations are present despite the large distribution of transverse wave vectors needed to describe light from the probe. © 2001 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Uv Near-field scanning microscopy and spectroscopy
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Analysis of longitudinal mode wave guiding in vertical-cavity surface-emitting lasers with long monolithic cavity

S. W. Z. Mahmoud, H. J. Unold, W. Schmid, R. Jäger, R. Michalzik, and K. J. Ebeling

Appl. Phys. Lett. 78, 586 (2001); http://dx.doi.org/10.1063/1.1344569 (3 pages) | Cited 6 times

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Lasing mode switching between two longitudinal modes is observed in transverse single mode vertical-cavity surface-emitting lasers with an extended cavity. Near- and far-field analyses carried out on devices with 2, 4, and 8 μm cavity spacers show an inherent relation between the transverse mode diameter and the calculated oxide- or thermally induced index guiding for the oscillating modes. Depending on the designed alignment of the optical longitudinal standing wave patterns relative to the oxide layer, mode switching can either be promoted or suppressed. Record-high single mode output powers up to 5.5 mW obtained from devices with 8 μm spacers and 8μm active diameter indicate the potential of the given device concept for low-divergence fundamental mode emission as required for many applications. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical shortpass filters based on macroporous silicon

Volker Lehmann, Reinhard Stengl, Hans Reisinger, Ralf Detemple, and Wolfgang Theiss

Appl. Phys. Lett. 78, 589 (2001); http://dx.doi.org/10.1063/1.1334943 (3 pages) | Cited 29 times

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A promising class of optical filters is introduced, based on diffraction at small apertures. The filters consist of straight pores with diameters in the micrometer regime and a length of up to one millimeter through a silicon wafer. In contrast to Bragg, Woods, or glass filters, the light is not transmitted in matter but in the medium inside the pores. The filters therefore show a true shortpass characteristic. Due to constructive interference between the high number of pores in an array, macropore filters are of high optical quality and may replace conventional filters in imaging systems. © 2001 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
81.05.Rm Porous materials; granular materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.25.Fx Diffraction and scattering
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Influence of secondary electron emission on breakdown voltage in a plasma display panel

Han S. Uhm, Eun H. Choi, and Guang S. Cho

Appl. Phys. Lett. 78, 592 (2001); http://dx.doi.org/10.1063/1.1343492 (3 pages) | Cited 22 times

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A measurement of the secondary electron-emission coefficient γ from MgO film in a plasma display panel is carried out. The influence of the secondary electron emission on the breakdown voltage in microdischarges on the plasma display panel is investigated by making use of the Townsend sparking criterion. Experimental data agree well with theoretical results, verifying the previous theoretical model. © 2001 American Institute of Physics.
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85.60.Pg Display systems
52.75.-d Plasma devices
52.80.Dy Low-field and Townsend discharges
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
79.20.Hx Electron impact: secondary emission

Laser-triggered ion acceleration and table top isotope production

K. Nemoto, A. Maksimchuk, S. Banerjee, K. Flippo, G. Mourou, D. Umstadter, and V. Yu. Bychenkov

Appl. Phys. Lett. 78, 595 (2001); http://dx.doi.org/10.1063/1.1343845 (3 pages) | Cited 104 times

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We have observed deuterons accelerated to energies of about 2 MeV in the interaction of relativistically intense 10 TW, 400 fs laser pulse with a thin layer of deuterated polystyrene deposited on Mylar film. These high-energy deuterons were directed to the boron sample, where they produced ∼ 105 atoms of positron active isotope 11C from the reaction 10B(d,n)11C. The activation results suggest that deuterons were accelerated from the front surface of the target. © 2001 American Institute of Physics.
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29.20.-c Accelerators
41.75.Jv Laser-driven acceleration
29.27.Eg Beam handling; beam transport
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Two-dimensional profiling and size effects on the transient enhanced diffusion of ultralow-energy B implants in Si

Filippo Giannazzo, Francesco Priolo, Vito Raineri, and Vittorio Privitera

Appl. Phys. Lett. 78, 598 (2001); http://dx.doi.org/10.1063/1.1343501 (3 pages) | Cited 8 times

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Two-dimensional profiles of ultralow-energy B implants in Si after diffusion have been studied in detail by scanning capacitance microscopy in connection with a double beveling technique to enhance depth and lateral resolution. Implants have been made into patterned wafers with different feature sizes ranging from 0.8 to 5 μm. It is demonstrated that the B transient enhanced diffusion is strongly reduced with decreasing feature size below about 2 μm. This effect is related to the increasing effect of interstitial lateral out-diffusion under the SiO2 mask. The implication for the formation of ultrashallow junctions in device structures is discussed. © 2001 American Institute of Physics.
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61.72.uf Ge and Si
61.82.Fk Semiconductors
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

Phase transition of Zr41Ti14Cu12.5Ni10Be22.5 bulk amorphous below glass transition temperature under high pressure

Ming Xiang Pan, Jing Guo Wang, Yu Shu Yao, De Qian Zhao, and Wei Hua Wang

Appl. Phys. Lett. 78, 601 (2001); http://dx.doi.org/10.1063/1.1343502 (3 pages) | Cited 8 times

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The effect of high pressure annealing on phase transition of the Zr41Ti14Cu12.5Ni10Be22.5 bulk metallic glass (BMG) is studied on compressed specimens by x-ray diffraction and differential scanning calorimetry (DSC) after annealing treatments at 573 K and under pressures up to 6 GPa. The results of DSC and transmission electron microscope show that the high pressure annealing cannot only promote structural relaxation, but also induce the occurrence of a phase transition at a temperature below the glass transition temperature in the BMG. The role of pressure on structural relaxation and phase transition is discussed. © 2001 American Institute of Physics.
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61.43.Fs Glasses
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
62.50.-p High-pressure effects in solids and liquids
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments

X-ray diffraction study of undercooled molten silicon

Hidekazu Kimura, Masahito Watanabe, Koichi Izumi, Taketoshi Hibiya, Dirk Holland-Moritz, Thomas Schenk, Karl Rudolf Bauchspieß, Stephan Schneider, Ivan Egry, Kenichi Funakoshi, and Michael Hanfland

Appl. Phys. Lett. 78, 604 (2001); http://dx.doi.org/10.1063/1.1341220 (3 pages) | Cited 30 times

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The short-range order of molten silicon was investigated in a wide temperature range from 1893 K down to 1403 K, corresponding to an undercooling of 290 K. Energy-dispersive x-ray diffraction was used in combination with electromagnetic levitation. The structure factor and the pair correlation function were determined as a function of temperature from the experimental data. A small hump on the higher wave vector side of the first peak in the structure factor was observed at all temperatures. The position of the first peak in the pair distribution function shifted to shorter distances and its height increased gradually with decreasing temperature. No discontinuous behavior was observed in the entire temperature range investigated. © 2001 American Institute of Physics.
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61.25.-f Studies of specific liquid structures

Velocity angular dispersion of surface and bulk modes in LiTaO3 at hypersonic frequencies

M. H. Kuok, S. C. Ng, V. L. Zhang, and H. J. Fan

Appl. Phys. Lett. 78, 607 (2001); http://dx.doi.org/10.1063/1.1343469 (3 pages) | Cited 7 times

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The existence of two surface acoustic waves, the Rayleigh wave and the second leaky wave, on X-cut LiTaO3 has been detected using Brillouin scattering. Evidence of dispersion between ultrasonic and hypersonic velocities was found for both surface and bulk acoustic waves. Elastic constant values were determined from a simultaneous least-squares fit of the angular dispersion data for the longitudinal and the two transverse bulk acoustic modes. © 2001 American Institute of Physics.
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68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids
62.20.D- Elasticity

Electrical conductivity relaxation in thin-film yttria-stabilized zirconia

A. Rivera, J. Santamaría, and C. León

Appl. Phys. Lett. 78, 610 (2001); http://dx.doi.org/10.1063/1.1343852 (3 pages) | Cited 18 times

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We report on complex admittance measurements on ZrO2:Y2O3 (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations. © 2001 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Variable-temperature scanning capacitance microscopy: A way to probe charge traps in oxide or semiconductor

C. K. Kim, I. T. Yoon, Y. Kuk, and H. Lim

Appl. Phys. Lett. 78, 613 (2001); http://dx.doi.org/10.1063/1.1339992 (3 pages) | Cited 5 times

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The spatial distribution of carriers and an energy level of charge traps are measured with a newly built variable-temperature scanning capacitance microscope (VTSCM). The system has the spatial resolution of ∼20 nm, and the good energy resolution enough to measure the energy level and the capture cross section of electron or hole traps. By operating the VTSCM in an isothermal transient mode of capacitance spectroscopy, a hole trap that lies about 0.40 eV above the valence band maximum is identified in a SiO2/p-Si sample, and the result is compared to that taken with a conventional deep level transient spectroscopy. © 2001 American Institute of Physics.
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07.79.Lh Atomic force microscopes
71.55.-i Impurity and defect levels
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

Y.-Z. Yoo, Y. Osaka, T. Fukumura, Zhengwu Jin, M. Kawasaki, H. Koinuma, T. Chikyow, P. Ahmet, A. Setoguchi, and S. F. Chichibu

Appl. Phys. Lett. 78, 616 (2001); http://dx.doi.org/10.1063/1.1344572 (3 pages) | Cited 25 times

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ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700 °C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700 °C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV. © 2001 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
81.65.Mq Oxidation
82.80.Rt Time of flight mass spectrometry
68.43.Tj Photon stimulated desorption
79.20.La Photon- and electron-stimulated desorption

Ion-assisted deposition of amorphous GaN: Raman and optical properties

A. Bittar, H. J. Trodahl, N. T. Kemp, and A. Markwitz

Appl. Phys. Lett. 78, 619 (2001); http://dx.doi.org/10.1063/1.1345800 (3 pages) | Cited 23 times

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We report the preparation of amorphous GaN by ion-assisted deposition and studies of the Raman and optical response of the resulting films. The films are transparent across the visible and show an edge whose energy and structure are in close agreement with crystalline material, suggesting a low density of gap states and homopolar bonds. The Raman spectrum is similar to a broadened vibrational density of modes calculated for wurtzite GaN, with a Raman cross section which varies among the vibrational bands. © 2001 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
63.50.-x Vibrational states in disordered systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Network structure in poly(vinylidene fluoride–trifluoroethylene) electrostrictive films

G. S. Buckley and C. M. Roland

Appl. Phys. Lett. 78, 622 (2001); http://dx.doi.org/10.1063/1.1344228 (3 pages) | Cited 7 times

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Recent studies of electron-irradiated copolymers of vinylidene fluoride and trifluoroethylene have demonstrated the potential for achieving a large electrostrictive response in these materials. Since the principal effect of the radiation is network formation, alternative methods of achieving improved electromechanical properties are available. In this letter, we use a two-solvent swelling technique to quantify the polymer-solvent interaction parameter for the copolymer networks. This enables determination of their crosslink densities, along with a measure of the degree of degradation accompanying radiolysis. Copolymer networks were then prepared chemically using organic peroxide. These networks were found to be similar to the radiation-crosslinked materials, both in the extent of degradation and with respect to the Curie temperature and crystalline melting behavior. The latter are crucial to the development of better electrostrictive properties. © 2001 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
77.65.Bn Piezoelectric and electrostrictive constants
82.35.Jk Copolymers, phase transitions, structure
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
77.55.-g Dielectric thin films
61.80.Fe Electron and positron radiation effects
61.82.Pv Polymers, organic compounds

Influence of electrode contact on luminescence from alumina ceramic surface under ac electric field in vacuum

G. J. Zhang, Z. Yan, Y. S. Liu, K. Yasuoka, and S. Ishii

Appl. Phys. Lett. 78, 625 (2001); http://dx.doi.org/10.1063/1.1344573 (3 pages) | Cited 5 times

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The luminescence from a planar metal–alumina–metal structure was investigated under ac voltage application in vacuum. Two kinds of electrode contacts, i.e., with/without sputtered gold film, showed quite different optical phenomena. For the nonsputtered alumina samples, no luminescence was detected until extremely irregular light pulses resulted from partial discharges under higher voltage. While for the sputtered samples, from far lower applied voltage, there was faint but stable light emission due to electroluminescence (EL) observed. Based on the band theory of solids, we proposed a model to explain the interesting phenomena qualitatively. Taking account of the sputtering process, a marked reduction of the potential barrier between electrodes and alumina surface would result. Thus, charge carriers can be easily injected from the electrodes into the surface layer of alumina, and EL will emit due to the radiative recombination of electrons and holes. It is considered that EL has a significant influence on the developing process of surface flashover. © 2001 American Institute of Physics.
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78.60.Fi Electroluminescence
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
52.80.Wq Discharge in liquids and solids
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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Growth and optical properties of type-II InP/GaAs self-organized quantum dots

Benzhong Wang and Soo-Jin Chua

Appl. Phys. Lett. 78, 628 (2001); http://dx.doi.org/10.1063/1.1342204 (3 pages) | Cited 22 times

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Self-organized InP quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix by metalorganic chemical vapor deposition. Strong photoluminescence centered at 986 nm is observed for the sample of InP grown at 490 °C, which can be attributed to radiative recombination of zero-dimensional (0D) electrons located in the InP dots and holes located in the surrounding regions. The indirect recombination of photogenerated carriers has been confirmed by the measurement of luminescence at different excitation densities and temperatures. If the InP is grown at 600 °C, experimental results show that a thicker and much smoother wetting layer is formed which results in much stronger and narrower luminescence located at 875 nm. In addition, state filling of the 0D electrons is also observed for the type-II quantum dots. © 2001 American Institute of Physics.
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78.67.Hc Quantum dots
73.21.La Quantum dots
81.07.Ta Quantum dots
78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films

Jin-Koog Shin, Churl Seung Lee, Kwang-Ryeol Lee, and Kwang Yong Eun

Appl. Phys. Lett. 78, 631 (2001); http://dx.doi.org/10.1063/1.1343840 (3 pages) | Cited 49 times

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Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1±0.5 cm−1/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp2 bond content shifts the G-peak position to higher frequency. © 2001 American Institute of Physics.
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61.43.Er Other amorphous solids
68.60.Bs Mechanical and acoustical properties
78.66.Nk Insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.05.U- Carbon/carbon-based materials

Single-electron charging in a parallel dot structure

T. H. Wang and Y. Aoyagi

Appl. Phys. Lett. 78, 634 (2001); http://dx.doi.org/10.1063/1.1344576 (3 pages) | Cited 2 times

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A parallel dot structure, which is not conductively coupled but capacitively coupled, is fabricated. Both of the respective single dots show clear Coulomb blockade oscillations (CBOs) as their gate voltages are scanned. Single-electron charging in one dot causes oscillations of the current through another dot, even in the regime of more negative gate voltages where the CBOs cannot be observed due to a too weak current. In addition, information on the energy levels in one dot can be obtained. © 2001 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.21.La Quantum dots
73.63.Kv Quantum dots
85.35.Gv Single electron devices
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