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29 Jan 2001

Volume 78, Issue 5, pp. 563-679

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Extraordinary magnetoresistance in externally shunted van der Pauw plates

T. Zhou, D. R. Hines, and S. A. Solin

Appl. Phys. Lett. 78, 667 (2001); http://dx.doi.org/10.1063/1.1343472 (3 pages) | Cited 30 times

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We show that extraordinary magnetoresistance (EMR) exhibited by a composite van der Pauw (vdP) disk consisting of a semiconductor with an internal shunt can also be obtained from an electrically equivalent, externally shunted structure that is amenable to fabrication in the mesoscopic sizes required for important magnetic sensor applications. As an example, we use bilinear conformal mapping to transform the composite vdP disk into an externally shunted rectangular plate and calculate its EMR by solving Laplace’s equation with appropriate boundary conditions using no adjustable parameters. The calculations are in good agreement with measurements of InSb plates with Au shunts. Room-temperature EMR values as high as 550% at 0.05 T are obtained. © 2001 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.23.-b Electronic transport in mesoscopic systems

Photoemission study of frontier orbital alignment at a metal–organic interface as a function of conjugation length of oligothiophene derivatives

A. J. Mäkinen, I. G. Hill, T. Noda, Y. Shirota, and Z. H. Kafafi

Appl. Phys. Lett. 78, 670 (2001); http://dx.doi.org/10.1063/1.1343471 (3 pages) | Cited 15 times

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We report an ultraviolet photoemission spectroscopy (UPS) study of solid films of two molecules, 5,5′-bis(dimesitylboryl)-2,2′-bithiophene (BMB-2T) and 5,5′-bis(dimesitylboryl)-2,2′:5′2′terthiophene (BMB-3T) which have been characterized as potential electron transport materials in organic light-emitting devices. Using the frontier orbital positions at a metal-organic interface, determined from the UPS measurements, together with the optical band gaps of the molecules, the electron injection barriers for the two oligothiophene derivatives are found to be significantly different. This barrier is estimated to be ∼ 0.2-0.3 eV lower for BMB-2T than for BMB-3T at a metal–organic interface. © 2001 American Institute of Physics.
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79.60.Fr Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Rv Polymers and organic compounds
78.66.Qn Polymers; organic compounds

Anode modification in organic light-emitting diodes by low-frequency plasma polymerization of CHF3

L. S. Hung, L. R. Zheng, and M. G. Mason

Appl. Phys. Lett. 78, 673 (2001); http://dx.doi.org/10.1063/1.1331639 (3 pages) | Cited 89 times

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Plasma polymerization of CHF3 at low frequencies was utilized for anode modification in organic light-emitting diodes. The polymerized fluorocarbon films have a high ionization potential and a relatively low resistivity. The devices with a polymer-coated anode of indium–tin–oxide exhibited enhanced hole injection and superior operational stability. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
82.35.-x Polymers: properties; reactions; polymerization
52.77.Bn Etching and cleaning
78.60.Fi Electroluminescence
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.61.Ph Polymers; organic compounds
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