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29 Jan 2001

Volume 78, Issue 5, pp. 563-679

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Imaging layers for 50 kV electron beam lithography: Selective displacement of noncovalently bound amine ligands from a siloxane host film

W. J. Dressick, M.-S. Chen, S. L. Brandow, K. W. Rhee, L. M. Shirey, and F. K. Perkins

Appl. Phys. Lett. 78, 676 (2001); http://dx.doi.org/10.1063/1.1340860 (3 pages) | Cited 21 times

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Show Abstract
We report the development of an imaging layer technology for 50 kV electron-beam lithography based upon the displacement of noncovalently bound amine ligands from a siloxane host film. The patterned films were used as templates for the selective deposition of an electroless nickel film resulting in a positive tone imaging mechanism. The deposited nickel was sufficiently robust to function as an etch mask for pattern transfer by reactive ion etching. Metallized and etched patterns with linewidths to approximately 40 nm are demonstrated using an exposure dose of 500 μC/cm2. © 2001 American Institute of Physics.
Show PACS
85.40.Hp Lithography, masks and pattern transfer
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
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