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29 Jan 2001

Volume 78, Issue 5, pp. 563-679

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Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode

Alexei A. Erchak, Daniel J. Ripin, Shanhui Fan, Peter Rakich, John D. Joannopoulos, Erich P. Ippen, Gale S. Petrich, and Leslie A. Kolodziejski

Appl. Phys. Lett. 78, 563 (2001); http://dx.doi.org/10.1063/1.1342048 (3 pages) | Cited 118 times

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Enhanced coupling to vertical radiation is obtained from a light-emitting diode using a two-dimensional photonic crystal that lies entirely inside the upper cladding layer of an asymmetric quantum well structure. A sixfold enhancement in light extraction in the vertical direction is obtained without the photonic crystal penetrating the active material. The photonic crystal is also used to couple pump light at normal incidence into the structure, providing strong optical excitation. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.82.Fv Hybrid systems

ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

J. H. Chang, J. S. Song, K. Godo, T. Yao, M. Y. Shen, and T. Goto

Appl. Phys. Lett. 78, 566 (2001); http://dx.doi.org/10.1063/1.1343475 (3 pages) | Cited 19 times

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A ZnCdTe/ZnTe/ZnMgSeTe quantum-well (QW) structure lattice matched to ZnTe is proposed for the light-emitting devices in the pure-green wavelength region. Thin ZnTe layers are inserted in between the ZnCdTe QW layer and ZnMgSeTe cladding layers, which improve the quality of the QW structure as demonstrated by its narrow photoluminescence line width (6.5 meV at 10 K). Optically pumped lasing at 552 nm at room temperature with a threshold optical power of 215 kW cm−2 is achieved. The present results clearly show the feasibility of ZnTe-based QW structures for the application to light-emitting devices in the pure-green wavelength region. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.67.De Quantum wells
42.55.Px Semiconductor lasers; laser diodes

Characteristics and discussion of self-pumped phase conjugation in a series of BaTiO3 crystals

Xinguang Xu, Zongshu Shao, Xiaodong Mu, Chenlin Du, Zhengping Wang, Haiqing Xu, and Haosu Luo

Appl. Phys. Lett. 78, 569 (2001); http://dx.doi.org/10.1063/1.1343503 (3 pages)

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This letter presents the experimental results of self-pumped phase conjugation (SPPC) in barium titanate (BaTiO3) crystals doped with Rh or Ce. It has been shown that the main parameters of SPPC depend very strongly on the concentration of dopants, the incident angles, and the cut type of the crystals. Some qualitative explanation of the experimental results are also given. © 2001 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Passively Q-switched Ho3+:Y3Al5O12 laser using a PbSe-doped glass

A. M. Malyarevich, P. V. Prokoshin, M. I. Demchuk, K. V. Yumashev, and A. A. Lipovskii

Appl. Phys. Lett. 78, 572 (2001); http://dx.doi.org/10.1063/1.1342213 (2 pages) | Cited 6 times

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Saturable absorber Q switching of Ho3+:Y3Al5O12 laser at 2.1 μm using PbSe-doped phosphate glass was demonstrated. Q-switched pulses of 22 mJ in energy and 85 ns in duration were obtained. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems

Graded doping profiles for reduction of carrier trapping in organic light-emitting devices incorporating doped polymers

Hsin-Hua Chang, Chung-Chih Wu, Cheng-Chung Yang, Chieh-Wei Chen, and Cheng-Chung Lee

Appl. Phys. Lett. 78, 574 (2001); http://dx.doi.org/10.1063/1.1344223 (3 pages) | Cited 15 times

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Dispersing emissive dopants into luminescent polymers is an effective approach to enhance luminescence and to tune emission color in organic light-emitting devices incorporating polymer films. However, the carrier trapping effect due to emissive dopants often causes deterioration of electrical characteristics. In this letter, we show that, by introducing a graded doping profile to match the carrier recombination zone in the doped polymer, the carrier trapping, and the deterioration of electrical characteristics can be minimized while the enhancement in efficiency maintains. The finite-source dye-diffusion thermal transfer is used to produce graded doping profiles into a luminescent polymer. The effectiveness of this approach has been demonstrated in both single-layer and heterostructure devices incorporating doped polymers. © 2001 American Institute of Physics.
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42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds

Optical harmonic generation in a quasi-phase-matched three-component Fibonacci superlattice LiTaO3

Y. B. Chen, C. Zhang, Y. Y. Zhu, S. N. Zhu, H. T. Wang, and N. B. Ming

Appl. Phys. Lett. 78, 577 (2001); http://dx.doi.org/10.1063/1.1344226 (3 pages) | Cited 24 times

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Optical harmonic generation in a three-component Fibonacci optical superlattice (3CFOS) is studied experimentally. Quasi-phase-matched second-harmonic spectrum and third-harmonic generation have been measured in a LiTaO3 3CFOS. Results show that the structure of the spectrum in a 3CFOS is richer than that in a two-component Fibonacci optical superlattice. The intrinsic self-similarity is shown in its Fourier spectrum. © 2001 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators

Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices

R. Akimoto, Y. Kinpara, K. Akita, F. Sasaki, and S. Kobayashi

Appl. Phys. Lett. 78, 580 (2001); http://dx.doi.org/10.1063/1.1343843 (3 pages) | Cited 29 times

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We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 μm, covering the 1.55 μm optical communication wavelengths within its absorption band width ( ∼ 250 nm), is achieved in the ZnSe/BeTe SLs with 4.5 ML-thick ZnSe layers. The intensity in photoinduced intersubband absorption increases sublinearly with pump intensity, reflecting the characteristic recombination processes of electron-hole pairs in a heterostructure with type-II band alignment. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.Cd Superlattices

Newton’s rings in near-field optics

Lori S. Goldner, Jeeseong Hwang, Garnett W. Bryant, Michael J. Fasolka, P. P. Absil, J. V. Hryniewicz, F. G. Johnson, H. Shen, and P.-T. Ho

Appl. Phys. Lett. 78, 583 (2001); http://dx.doi.org/10.1063/1.1343850 (3 pages) | Cited 2 times

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We show how Newton’s rings manifest themselves in near-field scanning optical microscopy and discuss how this effect can be used with topographic imaging to measure correlated roughness of thin films. In conventional optics, transmission through a thin nonabsorbing film depends on film thickness when multiple reflections from the film boundaries are coherent. Measurements and modeling of the transmission through thin films illuminated by a near-field probe show that these oscillations are present despite the large distribution of transverse wave vectors needed to describe light from the probe. © 2001 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Uv Near-field scanning microscopy and spectroscopy
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Analysis of longitudinal mode wave guiding in vertical-cavity surface-emitting lasers with long monolithic cavity

S. W. Z. Mahmoud, H. J. Unold, W. Schmid, R. Jäger, R. Michalzik, and K. J. Ebeling

Appl. Phys. Lett. 78, 586 (2001); http://dx.doi.org/10.1063/1.1344569 (3 pages) | Cited 6 times

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Lasing mode switching between two longitudinal modes is observed in transverse single mode vertical-cavity surface-emitting lasers with an extended cavity. Near- and far-field analyses carried out on devices with 2, 4, and 8 μm cavity spacers show an inherent relation between the transverse mode diameter and the calculated oxide- or thermally induced index guiding for the oscillating modes. Depending on the designed alignment of the optical longitudinal standing wave patterns relative to the oxide layer, mode switching can either be promoted or suppressed. Record-high single mode output powers up to 5.5 mW obtained from devices with 8 μm spacers and 8μm active diameter indicate the potential of the given device concept for low-divergence fundamental mode emission as required for many applications. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical shortpass filters based on macroporous silicon

Volker Lehmann, Reinhard Stengl, Hans Reisinger, Ralf Detemple, and Wolfgang Theiss

Appl. Phys. Lett. 78, 589 (2001); http://dx.doi.org/10.1063/1.1334943 (3 pages) | Cited 29 times

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A promising class of optical filters is introduced, based on diffraction at small apertures. The filters consist of straight pores with diameters in the micrometer regime and a length of up to one millimeter through a silicon wafer. In contrast to Bragg, Woods, or glass filters, the light is not transmitted in matter but in the medium inside the pores. The filters therefore show a true shortpass characteristic. Due to constructive interference between the high number of pores in an array, macropore filters are of high optical quality and may replace conventional filters in imaging systems. © 2001 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
81.05.Rm Porous materials; granular materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.25.Fx Diffraction and scattering
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