APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

29 Jan 2001

Volume 78, Issue 5, pp. 563-679

Return to All Sections
back to top
RSS Feeds

Two-dimensional profiling and size effects on the transient enhanced diffusion of ultralow-energy B implants in Si

Filippo Giannazzo, Francesco Priolo, Vito Raineri, and Vittorio Privitera

Appl. Phys. Lett. 78, 598 (2001); http://dx.doi.org/10.1063/1.1343501 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two-dimensional profiles of ultralow-energy B implants in Si after diffusion have been studied in detail by scanning capacitance microscopy in connection with a double beveling technique to enhance depth and lateral resolution. Implants have been made into patterned wafers with different feature sizes ranging from 0.8 to 5 μm. It is demonstrated that the B transient enhanced diffusion is strongly reduced with decreasing feature size below about 2 μm. This effect is related to the increasing effect of interstitial lateral out-diffusion under the SiO2 mask. The implication for the formation of ultrashallow junctions in device structures is discussed. © 2001 American Institute of Physics.
Show PACS
61.72.uf Ge and Si
61.82.Fk Semiconductors
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

Phase transition of Zr41Ti14Cu12.5Ni10Be22.5 bulk amorphous below glass transition temperature under high pressure

Ming Xiang Pan, Jing Guo Wang, Yu Shu Yao, De Qian Zhao, and Wei Hua Wang

Appl. Phys. Lett. 78, 601 (2001); http://dx.doi.org/10.1063/1.1343502 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of high pressure annealing on phase transition of the Zr41Ti14Cu12.5Ni10Be22.5 bulk metallic glass (BMG) is studied on compressed specimens by x-ray diffraction and differential scanning calorimetry (DSC) after annealing treatments at 573 K and under pressures up to 6 GPa. The results of DSC and transmission electron microscope show that the high pressure annealing cannot only promote structural relaxation, but also induce the occurrence of a phase transition at a temperature below the glass transition temperature in the BMG. The role of pressure on structural relaxation and phase transition is discussed. © 2001 American Institute of Physics.
Show PACS
61.43.Fs Glasses
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
62.50.-p High-pressure effects in solids and liquids
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments

X-ray diffraction study of undercooled molten silicon

Hidekazu Kimura, Masahito Watanabe, Koichi Izumi, Taketoshi Hibiya, Dirk Holland-Moritz, Thomas Schenk, Karl Rudolf Bauchspieß, Stephan Schneider, Ivan Egry, Kenichi Funakoshi, and Michael Hanfland

Appl. Phys. Lett. 78, 604 (2001); http://dx.doi.org/10.1063/1.1341220 (3 pages) | Cited 30 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The short-range order of molten silicon was investigated in a wide temperature range from 1893 K down to 1403 K, corresponding to an undercooling of 290 K. Energy-dispersive x-ray diffraction was used in combination with electromagnetic levitation. The structure factor and the pair correlation function were determined as a function of temperature from the experimental data. A small hump on the higher wave vector side of the first peak in the structure factor was observed at all temperatures. The position of the first peak in the pair distribution function shifted to shorter distances and its height increased gradually with decreasing temperature. No discontinuous behavior was observed in the entire temperature range investigated. © 2001 American Institute of Physics.
Show PACS
61.25.-f Studies of specific liquid structures

Velocity angular dispersion of surface and bulk modes in LiTaO3 at hypersonic frequencies

M. H. Kuok, S. C. Ng, V. L. Zhang, and H. J. Fan

Appl. Phys. Lett. 78, 607 (2001); http://dx.doi.org/10.1063/1.1343469 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The existence of two surface acoustic waves, the Rayleigh wave and the second leaky wave, on X-cut LiTaO3 has been detected using Brillouin scattering. Evidence of dispersion between ultrasonic and hypersonic velocities was found for both surface and bulk acoustic waves. Elastic constant values were determined from a simultaneous least-squares fit of the angular dispersion data for the longitudinal and the two transverse bulk acoustic modes. © 2001 American Institute of Physics.
Show PACS
68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids
62.20.D- Elasticity

Electrical conductivity relaxation in thin-film yttria-stabilized zirconia

A. Rivera, J. Santamaría, and C. León

Appl. Phys. Lett. 78, 610 (2001); http://dx.doi.org/10.1063/1.1343852 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on complex admittance measurements on ZrO2:Y2O3 (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations. © 2001 American Institute of Physics.
Show PACS
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Variable-temperature scanning capacitance microscopy: A way to probe charge traps in oxide or semiconductor

C. K. Kim, I. T. Yoon, Y. Kuk, and H. Lim

Appl. Phys. Lett. 78, 613 (2001); http://dx.doi.org/10.1063/1.1339992 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The spatial distribution of carriers and an energy level of charge traps are measured with a newly built variable-temperature scanning capacitance microscope (VTSCM). The system has the spatial resolution of ∼20 nm, and the good energy resolution enough to measure the energy level and the capture cross section of electron or hole traps. By operating the VTSCM in an isothermal transient mode of capacitance spectroscopy, a hole trap that lies about 0.40 eV above the valence band maximum is identified in a SiO2/p-Si sample, and the result is compared to that taken with a conventional deep level transient spectroscopy. © 2001 American Institute of Physics.
Show PACS
07.79.Lh Atomic force microscopes
71.55.-i Impurity and defect levels
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation

Y.-Z. Yoo, Y. Osaka, T. Fukumura, Zhengwu Jin, M. Kawasaki, H. Koinuma, T. Chikyow, P. Ahmet, A. Setoguchi, and S. F. Chichibu

Appl. Phys. Lett. 78, 616 (2001); http://dx.doi.org/10.1063/1.1344572 (3 pages) | Cited 25 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700 °C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700 °C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV. © 2001 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
81.65.Mq Oxidation
82.80.Rt Time of flight mass spectrometry
68.43.Tj Photon stimulated desorption
79.20.La Photon- and electron-stimulated desorption

Ion-assisted deposition of amorphous GaN: Raman and optical properties

A. Bittar, H. J. Trodahl, N. T. Kemp, and A. Markwitz

Appl. Phys. Lett. 78, 619 (2001); http://dx.doi.org/10.1063/1.1345800 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the preparation of amorphous GaN by ion-assisted deposition and studies of the Raman and optical response of the resulting films. The films are transparent across the visible and show an edge whose energy and structure are in close agreement with crystalline material, suggesting a low density of gap states and homopolar bonds. The Raman spectrum is similar to a broadened vibrational density of modes calculated for wurtzite GaN, with a Raman cross section which varies among the vibrational bands. © 2001 American Institute of Physics.
Show PACS
78.66.Jg Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
63.50.-x Vibrational states in disordered systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Network structure in poly(vinylidene fluoride–trifluoroethylene) electrostrictive films

G. S. Buckley and C. M. Roland

Appl. Phys. Lett. 78, 622 (2001); http://dx.doi.org/10.1063/1.1344228 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recent studies of electron-irradiated copolymers of vinylidene fluoride and trifluoroethylene have demonstrated the potential for achieving a large electrostrictive response in these materials. Since the principal effect of the radiation is network formation, alternative methods of achieving improved electromechanical properties are available. In this letter, we use a two-solvent swelling technique to quantify the polymer-solvent interaction parameter for the copolymer networks. This enables determination of their crosslink densities, along with a measure of the degree of degradation accompanying radiolysis. Copolymer networks were then prepared chemically using organic peroxide. These networks were found to be similar to the radiation-crosslinked materials, both in the extent of degradation and with respect to the Curie temperature and crystalline melting behavior. The latter are crucial to the development of better electrostrictive properties. © 2001 American Institute of Physics.
Show PACS
77.84.Jd Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
77.65.Bn Piezoelectric and electrostrictive constants
82.35.Jk Copolymers, phase transitions, structure
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
77.55.-g Dielectric thin films
61.80.Fe Electron and positron radiation effects
61.82.Pv Polymers, organic compounds

Influence of electrode contact on luminescence from alumina ceramic surface under ac electric field in vacuum

G. J. Zhang, Z. Yan, Y. S. Liu, K. Yasuoka, and S. Ishii

Appl. Phys. Lett. 78, 625 (2001); http://dx.doi.org/10.1063/1.1344573 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The luminescence from a planar metal–alumina–metal structure was investigated under ac voltage application in vacuum. Two kinds of electrode contacts, i.e., with/without sputtered gold film, showed quite different optical phenomena. For the nonsputtered alumina samples, no luminescence was detected until extremely irregular light pulses resulted from partial discharges under higher voltage. While for the sputtered samples, from far lower applied voltage, there was faint but stable light emission due to electroluminescence (EL) observed. Based on the band theory of solids, we proposed a model to explain the interesting phenomena qualitatively. Taking account of the sputtering process, a marked reduction of the potential barrier between electrodes and alumina surface would result. Thus, charge carriers can be easily injected from the electrodes into the surface layer of alumina, and EL will emit due to the radiative recombination of electrons and holes. It is considered that EL has a significant influence on the developing process of surface flashover. © 2001 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
52.80.Wq Discharge in liquids and solids
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close