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Applied Physics Letters / Volume 78 / Issue 6 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 78, 712 (2001); http://dx.doi.org/10.1063/1.1337632 (3 pages)

Molecular-beam epitaxial growth and surface characterization of GaAs(311)B

Z. M. Wang, L. Däweritz, and K. H. Ploog

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

(Received 19 July 2000; accepted 13 November 2000)

Reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) are used to study the surface and growth of GaAs (311)B. The RHEED pattern reveals a lateral periodicity of 3.2 nm along the [01math] direction, which is confirmed in real space by STM images. Pronounced RHEED intensity oscillations during the homoepitaxial growth on GaAs(311)B were observed in a wide substrate temperature range. © 2001 American Institute of Physics.

© 2001 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, surface structure, reflection high energy electron diffraction, scanning tunnelling microscopy, semiconductor growth

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 61.05.jh

    Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

  • 68.55.A-

    Nucleation and growth

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

  • 81.05.Ea

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1337632

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    W. I. Wang, E. E. Mendez, T. S. Kuan, and L. Esaki, Appl. Phys. Lett. 47, 826 (1985)APPLAB000047000008000826000001.

    K. Nishi, T. Anan, A. Gomyo, S. Kohmoto, and S. Sugou, Appl. Phys. Lett. 70, 3579 (1997)APPLAB000070000026003579000001.

    K. Akahane, T. Kawamura, K. Okino, H. Koyama, S. Lan, Y. Okada, M. Kawabe, and M. Tosa, Appl. Phys. Lett. 73, 3411 (1998)APPLAB000073000023003411000001.

    A. Polimeni, M. Henini, A. Patane, L. Eaves, P. C. Main, and G. Hill, Appl. Phys. Lett. 73, 1415 (1998)APPLAB000073000010001415000001.

    K. Nishi, R. Mirin, D. Leonard, G. Medeiros-Ribeiro, P. M. Petroff, and A. C. Gossard, J. Appl. Phys. 80, 3466 (1996)JAPIAU000080000006003466000001.

    R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett. 67, 3812 (1991).

    M. Wassermeier, J. Sudijono, M. D. Johnson, K. T. Leung, B. G. Orr, L. Däweritz, and K. Ploog, Phys. Rev. B 51, 14721 (1995).

    J. Platen, A. Kley, C. Setzer, K. Jacobi, P. Ruggerone, and M. Scheffler, J. Appl. Phys. 85, 3597 (1999)JAPIAU000085000007003597000001.

    K. Lee, J. Y. Lee, and Y. Chang, J. Appl. Phys. 73, 3291 (1993)JAPIAU000073000007003291000001.


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