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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Cristian Rivas, Roger Lake, Gerhard Klimeck, William R. Frensley, Massimo V. Fischetti, Phillip E. Thompson, Sean L. Rommel, and Paul R. Berger

Appl. Phys. Lett. 78, 814 (2001); http://dx.doi.org/10.1063/1.1343500 (3 pages) | Cited 24 times

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Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current–voltage response of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Electron confinement in the contacts results in weak structure in the current–voltage characteristic. The structure is lost when finite lifetime effects are included. The approach uses the nonequilibrium Green function formalism in a second-neighbor sp3s∗ planar orbital basis. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Cw Elemental semiconductors

Band-edge luminescence in quaternary AlInGaN light-emitting diodes

M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, G. Simin, A. Zakheim, M. Asif Khan, R. Gaska, and M. S. Shur

Appl. Phys. Lett. 78, 817 (2001); http://dx.doi.org/10.1063/1.1343493 (3 pages) | Cited 19 times

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Operation of InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQW LEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQW LEDs, making them attractive for high-power solid-state lighting applications. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Quantitative metrology study of Cu/SiO2 interconnect structures using fluorescence x-ray microscopy

Guangyong Xu, X. Su, C. B. Stagarescu, D. E. Eastman, B. Lai, Z. Cai, I. C. Noyan, and C.-K. Hu

Appl. Phys. Lett. 78, 820 (2001); http://dx.doi.org/10.1063/1.1339996 (3 pages) | Cited 6 times

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We demonstrate the capability of fluorescence x-ray microscopy with a 0.25 μm beam for in situ measurements of Cu-wiring interconnects of submicron dimensions. We are able to measure submicron line widths, lengths, and thicknesses of both Cu and W structures, and a Ta liner in the test vehicle, to the absolute accuracy of 0.03 μm, and a relative accuracy of ∼4% in lateral dimensions, and ∼10% in heights. The shape of a buried electromigration void was also determined. This nanoscale nondestructive characterization technique promises to be powerful for a variety of materials systems. © 2001 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.85.Tt X-ray microscopes

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, K. P. Lee, and S. J. Pearton

Appl. Phys. Lett. 78, 823 (2001); http://dx.doi.org/10.1063/1.1346622 (3 pages) | Cited 34 times

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AlxGa1−xN (x = 0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ⩽ 9.67×105 V cm−1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94–268 MW cm−2 for all the devices. © 2001 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Self-repair of ordered pattern of nanometer dimensions based on self-compensation properties of anodic porous alumina

Hideki Masuda, Masato Yotsuya, Mari Asano, Kazuyuki Nishio, Masashi Nakao, Atsushi Yokoo, and Toshiaki Tamamura

Appl. Phys. Lett. 78, 826 (2001); http://dx.doi.org/10.1063/1.1344575 (3 pages) | Cited 44 times

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The self-repair of an ordered pattern of nanometer dimensions based on the self-compensation properties of anodic porous alumina is demonstrated. In a pretextured pattern formed on Al using the nanoindentation process with an array of convexes, the deficiency sites of the pattern were found to be compensated automatically during the anodization. Combining the self-compensation properties of the pore configuration of the anodic porous alumina with the preparation of a replica of the compensated porous structure allowed us to develop a process which has the capability of self-repairing the imperfections in the starting pattern. It was confirmed that deficiencies in the starting pattern could be repaired automatically in the Ni pattern regenerated using the self-compensated anodic porous alumina as a template. © 2001 American Institute of Physics.
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81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
81.05.Rm Porous materials; granular materials
61.43.Gt Powders, porous materials
81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis
68.35.Gy Mechanical properties; surface strains
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