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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Infrared optical properties of LaNiO3–platinized silicon and PbZrχTi1−χO3–LaNiO3–platinized silicon heterostructures

J. Yu, Z. M. Huang, X. J. Meng, J. L. Sun, J. H. Chu, and D. Y. Tang

Appl. Phys. Lett. 78, 793 (2001); http://dx.doi.org/10.1063/1.1347403 (3 pages) | Cited 7 times

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Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)–Ti–SiO2–Si substrates are obtained in the 2.5–12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZrχTi1−χO3(PZT) thin films with χ = 0.3 and 0.5 on LaNiO3–Pt–Ti–SiO2–Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni–PZT–LaNiO3–Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors. © 2001 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
85.60.Gz Photodetectors (including infrared and CCD detectors)

Local probing of the polarization state in thin Pb(ZrTi)O3 films during polarization reversal

E. D. Mishina, N. E. Sherstyuk, E. Ph. Pevtsov, K. A. Vorotilov, A. S. Sigov, M. P. Moret, S. A. Rössinger, P. K. Larsen, and Th. Rasing

Appl. Phys. Lett. 78, 796 (2001); http://dx.doi.org/10.1063/1.1329332 (3 pages) | Cited 10 times

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The polarization state of a thin Pb(ZrTi)O3 film is probed by optical second-harmonic generation (SHG) while applying an external voltage (a sine wave). A hysteresis in the SHG intensity is observed that corresponds to the dielectric hysteresis and is analyzed using a phenomenological relation between the SHG intensity and the dielectric polarization. Based on this model, the polarization state of the film during polarization reversal is mapped. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators

Domain structures and planar defects in SrBi2Ta2O9 single crystals observed by transmission electron microscopy

Xinhua Zhu, Jianmin Zhu, Shunhua Zhou, Qi Li, Zhiguo Liu, and Naiben Ming

Appl. Phys. Lett. 78, 799 (2001); http://dx.doi.org/10.1063/1.1347383 (3 pages) | Cited 4 times

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In this work, the domain structures and structural planar defects in SrBi2Ta2O9 (SBT) single crystals with (001) orientation were investigated by transmission electron microscopy. The 90° domain walls are identified by the 90° rotation relationship of the electron diffraction pattern about the [001] zone axis, and which exhibit irregular configurations. Antiphase boundaries (APBs) in SBT single crystals are also observed, which exhibit ribbon-like morphologies. Fourfold vertices formed by four APBs meeting together are observed as predominant singularities, and are explained by a four-state clock model, in which the four states are considered as the TaO6 octahedra tilting left, right, forward, or backward along the crystallographic directions. Some threefold vertices are also observed since both threefold and fourfold vertices are energetically allowed in the present model. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
61.72.Nn Stacking faults and other planar or extended defects
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