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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Self-assembled Fe nanowires using organometallic chemical vapor deposition and CaF2 masks on stepped Si(111)

J.-L. Lin, D. Y. Petrovykh, A. Kirakosian, H. Rauscher, F. J. Himpsel, and P. A. Dowben

Appl. Phys. Lett. 78, 829 (2001); http://dx.doi.org/10.1063/1.1345830 (3 pages) | Cited 37 times

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Linear arrays of 3 nm wide Fe stripes with 15 nm spacing are fabricated by self-assembly. They are formed by photolysis of ferrocene that is selectively adsorbed between CaF2 stripes. An ultraviolet nitrogen laser removes the organic ligands from ferrocene. Arrays of CaF2 stripes serve as masks, which are self-assembled on a stepped Si(111) surface. Scanning tunneling microscopy is used to investigate the surface morphology during growth. A generalization of this method to other wire materials is discussed. © 2001 American Institute of Physics.
Show PACS
81.16.Dn Self-assembly
81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.75.-c Magnetic properties of nanostructures
68.65.La Quantum wires (patterned in quantum wells)
68.43.Mn Adsorption kinetics
82.50.Hp Processes caused by visible and UV light
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Bundle structure and sliding of single-walled carbon nanotubes observed by frictional-force microscopy

K. Miura, M. Ishikawa, R. Kitanishi, M. Yoshimura, K. Ueda, Y. Tatsumi, and N. Minami

Appl. Phys. Lett. 78, 832 (2001); http://dx.doi.org/10.1063/1.1334359 (3 pages) | Cited 8 times

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The bundle structure and the sliding of single-walled carbon nanotubes (SWNTs) have been observed by frictional-force microscopy. The diameter of the nanotube and the nearest distance between any two nanotubes were estimated to be 1.4 and 0.3 nm, respectively. The frictional force required to move SWNTs on a KCl(001) surface and its energy dissipation were estimated to be 11 nN and 0.75×10−16 J, respectively. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
62.20.Qp Friction, tribology, and hardness

Enhanced depth resolution in terahertz imaging using phase-shift interferometry

Jon L. Johnson, Timothy D. Dorney, and Daniel M. Mittleman

Appl. Phys. Lett. 78, 835 (2001); http://dx.doi.org/10.1063/1.1346626 (3 pages) | Cited 36 times

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We describe an imaging technique for few-cycle optical pulses. An object to be imaged is placed at the focus of a lens in one arm of a Michaelson interferometer. This introduces a phase shift of approximately π between the two arms of the interferometer, via the Gouy phase shift. The resulting destructive interference provides a nearly background-free measurement, and a dramatic enhancement in depth resolution. We demonstrate this using single-cycle pulses of terahertz radiation, and show that it is possible to resolve features thinner than 2% of the coherence length of the radiation. This technique could have important applications in low-coherence optical tomographic measurements. © 2001 American Institute of Physics.
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07.60.Ly Interferometers
42.30.Wb Image reconstruction; tomography
42.25.Kb Coherence
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment

Scaling properties and electromigration resistance of sputtered Ag metallization lines

M. Hauder, J. Gstöttner, W. Hansch, and D. Schmitt-Landsiedel

Appl. Phys. Lett. 78, 838 (2001); http://dx.doi.org/10.1063/1.1345801 (3 pages) | Cited 43 times

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Resistivity and electromigration were investigated for thin sputtered Ag films and microstructured Ag lines. Resistivities of thin films were found to be lower compared to copper and follow the prediction of the size effect. Microstructured Ag lines show a high electromigration resistance at accelerated stress measurements. Considering joule heating of the lines, the activation energy for electromigration was found to be 0.58 eV. The extrapolated median lifetime of Ag lines was found to be similar or higher than for Cu lines. © 2001 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
73.61.At Metal and metallic alloys

2.5% efficient organic plastic solar cells

Sean E. Shaheen, Christoph J. Brabec, N. Serdar Sariciftci, Franz Padinger, Thomas Fromherz, and Jan C. Hummelen

Appl. Phys. Lett. 78, 841 (2001); http://dx.doi.org/10.1063/1.1345834 (3 pages) | Cited 986 times

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We show that the power conversion efficiency of organic photovoltaic devices based on a conjugated polymer/methanofullerene blend is dramatically affected by molecular morphology. By structuring the blend to be a more intimate mixture that contains less phase segregation of methanofullerenes, and simultaneously increasing the degree of interactions between conjugated polymer chains, we have fabricated a device with a power conversion efficiency of 2.5% under AM1.5 illumination. This is a nearly threefold enhancement over previously reported values for such a device, and it approaches what is needed for the practical use of these devices for harvesting energy from sunlight. © 2001 American Institute of Physics.
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84.60.Jt Photoelectric conversion
61.41.+e Polymers, elastomers, and plastics
78.66.Qn Polymers; organic compounds

Holographic scattering as a technique to determine the activation energy for thermal fixing in photorefractive materials

M. A. Ellabban, G. Mandula, M. Fally, R. A. Rupp, and L. Kovács

Appl. Phys. Lett. 78, 844 (2001); http://dx.doi.org/10.1063/1.1346623 (3 pages) | Cited 9 times

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We introduce holographic scattering as a technique to determine the activation energy for thermal fixing of refractive index patterns in photorefractive crystals. After recording a parasitic hologram at ambient temperature, we measured the time dependence of the transmitted intensity at the fixing temperature, to determine the time constant. The temperature dependence of the latter allowed us to evaluate the thermal activation energy. For comparison, we performed an equivalent experiment employing the standard two-wave mixing method. The values obtained using the two techniques agree very well. © 2001 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.40.My Applications
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
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