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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Near-field images of the AgOx-type super-resolution near-field structure

Wei-Chih Liu, Cheng-Yen Wen, Kuei-Hsien Chen, Wei Chih Lin, and Din Ping Tsai

Appl. Phys. Lett. 78, 685 (2001); http://dx.doi.org/10.1063/1.1345832 (3 pages) | Cited 32 times

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As a promising disk structure for ultrahigh density optical data storage, super-resolution near-field structure of AgOx type has been studied by the tapping-mode tuning-fork near-field scanning optical microscope as well as the transmission electron microscope. This structure presents strong near-field intensity enhancement and nonlinear optical effect, compared with the ordinary material. Numerical calculations confirm that the localized surface plasmon and the nonuniform material structures are the main causes for these unusual characteristics. © 2001 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
68.37.Uv Near-field scanning microscopy and spectroscopy
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.68.+m Optical properties of surfaces

Photorefractive chiral smectic A phases

R. Termine, B. C. De Simone, and A. Golemme

Appl. Phys. Lett. 78, 688 (2001); http://dx.doi.org/10.1063/1.1345824 (3 pages) | Cited 6 times

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We present results of the photorefractive properties of a chiral smectic A liquid-crystalline phase. In our approach, the mesophase is sandwiched between two photoconducting layers. In contrast to the effect due to the dielectric anisotropy typical of nematic phases, the refractive-index modulation is due to the electroclinic effect. We measured the grating spacing and the field dependence of the gain coefficient and obtained a net two-beam coupling gain of 600 cm−1 at 35 V/μm. © 2001 American Institute of Physics.
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42.70.Df Liquid crystals
42.70.Ln Holographic recording materials; optical storage media
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
42.40.Ht Hologram recording and readout methods
42.40.Eq Holographic optical elements; holographic gratings

Strong luminescence from Tamm states in modulation-doped superlattices

A. B. Henriques

Appl. Phys. Lett. 78, 691 (2001); http://dx.doi.org/10.1063/1.1346627 (3 pages) | Cited 4 times

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Calculations are presented for the photoluminescence spectrum of InP/In0.53Ga0.47As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute with an optical band at energies higher than the In0.53Ga0.47As band gap. These results are in good agreement with experimental observations. © 2001 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
73.21.Cd Superlattices

Gratings in indium oxide film overlayers on ion-exchanged waveguides by excimer laser micromachining

S. Pissadakis, L. Reekie, M. N. Zervas, J. S. Wilkinson, and G. Kiriakidis

Appl. Phys. Lett. 78, 694 (2001); http://dx.doi.org/10.1063/1.1345836 (3 pages) | Cited 6 times

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Relief Bragg gratings were imprinted by 248 nm interferometric excimer laser ablation on potassium ion-exchanged channel waveguides in BK-7 glass overlaid with a thin high-index InOx film. Using five pulses of energy density 60 mJ/cm2, a spectral transmittance notch of depth 66% and ΔλFWHM<0.1 nm was obtained at 1547 nm in the TE polarization for a waveguide having a nominal width of 8 μm and a 135-nm-thick InOx overlayer. In waveguides coated with 100 nm InOx, with widths increasing from 3 to 8 μm, the reflection wavelength shifted by 0.12 nm/μm and the reflectivity increased monotonically. © 2001 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays
78.66.Li Other semiconductors
42.62.-b Laser applications

Influence of disorder and a parallel magnetic field on a quantum cascade laser

V. M. Apalkov and Tapash Chakraborty

Appl. Phys. Lett. 78, 697 (2001); http://dx.doi.org/10.1063/1.1343495 (3 pages) | Cited 5 times

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The luminescence spectra of a quantum cascade laser (QCL) in a strong magnetic field is influenced significantly by the presence of disorder (charged or neutral) in the system. An externally applied magnetic field parallel to the electron plane causes a redshift of the luminescence peak in the absence of any disorder potential. Our results indicate that the disorder potential tends to cancel that redshift and causes a rapid decrease of the luminescence peak. A similar behavior was observed in a recent experiment on a QCL in a parallel magnetic field by S. Blaser, L. Diehl, M. Beck, and J. Faist [Physica E 7, 33 (2000)]. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.20.Ls Magneto-optical effects
78.55.-m Photoluminescence, properties and materials

Efficient molecular photorefractive materials based on methine dyes

Liming Wang, Man-Kit Ng, and Luping Yu

Appl. Phys. Lett. 78, 700 (2001); http://dx.doi.org/10.1063/1.1347025 (3 pages) | Cited 19 times

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This letter reports a series of molecular materials that shows efficient photorefractive effect. The materials which consist of monolithic methine dye molecules can form amorphous films. A net photorefractive gain of 215 cm−1 and a diffraction efficiency of 87.6% at a semiconductor laser wavelength of 780 nm are observed. These materials are the simplest molecular materials and possess the best photorefractive performances. Due to the large photorefractive effect, optical self-defocusing and instability of the laser beam are observed in these materials when the applied electric field is above a threshold. © 2001 American Institute of Physics.
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42.70.Gi Light-sensitive materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.40.+w Photoconduction and photovoltaic effects

Optically induced pulse delay in a solid-state Raman amplifier

Kijoon Lee and Nabil M. Lawandy

Appl. Phys. Lett. 78, 703 (2001); http://dx.doi.org/10.1063/1.1347009 (3 pages) | Cited 27 times

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The pump-induced group velocity reduction of subnanosecond pulses is calculated and measured in a Ba(NO3)2 solid-state Raman amplifier. 1.197 μm probe pulses with 90 ps duration were generated using a Raman-shifted mode-locked and Q-switched Nd:YAG laser, and propagated through a Ba(NO3)2 crystal synchronously pumped by 7-ns-long 1.06 μm pulses. The time delay of the pulse peak was measured with varying pump intensity and was compared with theoretical calculation up to the point where amplified spontaneous Raman emission becomes dominant. The maximum time delay was found to be 105 ps. © 2001 American Institute of Physics.
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42.55.Ye Raman lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
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