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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Interparticle coupling effects in nanofabricated substrates for surface-enhanced Raman scattering

L. Gunnarsson, E. J. Bjerneld, H. Xu, S. Petronis, B. Kasemo, and M. Käll

Appl. Phys. Lett. 78, 802 (2001); http://dx.doi.org/10.1063/1.1344225 (3 pages) | Cited 136 times

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Surface-enhanced Raman scattering (SERS) substrates, consisting of arrays of electromagnetically coupled Ag nanoparticles on Si, were manufactured by electron-beam lithography. Substrate Raman efficiency, evaluated from the relative SERS intensities of the adsorbates rhodamine 6G and thiophenol, was found to increase rapidly with decreasing interparticle separation, signaling the importance of strong interparticle coupling effects in SERS. The observed SERS efficiency variation can be qualitatively explained in terms of electrostatic models of coupled metal structures. © 2001 American Institute of Physics.
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78.30.Jw Organic compounds, polymers
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.Nd Micro- and nanolithography
78.68.+m Optical properties of surfaces
78.30.Er Solid metals and alloys
81.07.Bc Nanocrystalline materials
68.43.Fg Adsorbate structure (binding sites, geometry)

Quantum dot and hole formation in sputter erosion

B. Kahng, H. Jeong, and A.-L. Barabási

Appl. Phys. Lett. 78, 805 (2001); http://dx.doi.org/10.1063/1.1343468 (3 pages) | Cited 59 times

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Recently, it was experimentally demonstrated that sputtering under normal incidence leads to the formation of spatially ordered uniform nanoscale islands or holes. Here, we show that these nanostructures have inherently nonlinear origin, first appearing when the nonlinear terms start to dominate the surface dynamics. Depending on the sign of the nonlinear terms, determined by the shape of the collision cascade, the surface can develop regular islands or holes with identical dynamical features, and while the size of these nanostructures is independent of flux and temperature, it can be modified by tuning the ion energy. © 2001 American Institute of Physics.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Fermi electron wave packet interference images on carbon nanotubes at room temperature

A. Hassanien, M. Tokumoto, P. Umek, D. Mihailovic, and A. Mrzel

Appl. Phys. Lett. 78, 808 (2001); http://dx.doi.org/10.1063/1.1345803 (3 pages) | Cited 12 times

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We report on the structure and electronic properties of single wall carbon nanotubes tips with atomically spatial resolution. Scanning tunneling microscopy shows topographic images of closed tips with a variety of geometrical structure; these include round, conical, as well as tips with a messy shape. Standing wave pattern of the charge density is observed at the tube cap which is formed due to constructive interference between the electronic states and its reflection on the nanotube tips. Atomically resolved images show asymmetry in the charge density that decay out within 6 nm away from the cap. These distinctive tip states do not exist elsewhere on the tube and are related to the presence of topological defects at tube ends. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Conductance of polymer nanowires fabricated by a combined electrodeposition and mechanical break junction method

H. X. He, C. Z. Li, and N. J. Tao

Appl. Phys. Lett. 78, 811 (2001); http://dx.doi.org/10.1063/1.1335551 (3 pages) | Cited 65 times

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We electrochemically deposit conducting polymer to bridge two closely placed electrodes, and then form a polymer nanowire by stretching the polymer bridge with the electrodes. During stretching, the conductance increases initially as the polymer chains are aligned in parallel, and then decreases in a stepwise fashion, due to abrupt changes in the nanowire thickness. We study the current–voltage (IV) characteristics of the nanowire as a function of its electrochemical potential in an analogous fashion to the control of the gate voltage in semiconductor devices. Depending on the potential, the IV curves vary from ohmic to rectifying characteristics. © 2001 American Institute of Physics.
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73.63.Nm Quantum wires
81.07.Nb Molecular nanostructures
81.15.Pq Electrodeposition, electroplating
73.61.Ph Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
82.35.Cd Conducting polymers
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