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5 Feb 2001

Volume 78, Issue 6, pp. 685-846

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Extraction of ions from the matrix sheath in ablation-plasma ion implantation

Bo Qi, Y. Y. Lau, and R. M. Gilgenbach

Appl. Phys. Lett. 78, 706 (2001); http://dx.doi.org/10.1063/1.1343842 (3 pages) | Cited 4 times

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A simple one-dimensional theory is presented to assess the implantation of ions from the ion matrix sheath (IMS) in an ablated plasma plume that is approaching a negatively biased substrate. Under the assumption that the plume geometry, the electron and ion density distributions, and the potential distribution are frozen during the IMS extraction, the implanted ion current is calculated as a function of time for various substrate-plume separations. This model accurately recovers Lieberman’s classic results when the plume front is initially in contact with the substrate. © 2001 American Institute of Physics.
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52.77.Dq Plasma-based ion implantation and deposition
61.80.Jh Ion radiation effects
52.38.Mf Laser ablation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
52.40.Kh Plasma sheaths

Excitation of a microdischarge with a reverse-biased pn junction

C. J. Wagner, S.-J. Park, and J. G. Eden

Appl. Phys. Lett. 78, 709 (2001); http://dx.doi.org/10.1063/1.1345838 (3 pages) | Cited 14 times

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Excitation of cylindrical microdischarges, 300–360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200–700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of 700 Torr, the wavelength-integrated (300–800 nm) output power—emitted into a solid angle of ∼ 6×10−2 sr—of a 360-μm-diam device is 48±1 μW for an operating current and voltage of 5.7±0.1 mA and 134 V, respectively. This hybrid solid state/gas device represents the demonstration of the generation of a gas discharge by a pn junction and lends itself to the fabrication of large arrays. © 2001 American Institute of Physics.
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52.80.Hc Glow; corona
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes
42.72.Bj Visible and ultraviolet sources
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