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12 Feb 2001

Volume 78, Issue 7, pp. 853-1016

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High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films

X. H. Zhu, A. D. Li, D. Wu, T. Zhu, Z. G. Liu, and N. B. Ming

Appl. Phys. Lett. 78, 973 (2001); http://dx.doi.org/10.1063/1.1332106 (3 pages) | Cited 7 times

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Structural planar defects in the SrBi2Ta2O9 (SBT) films with 10 mol % excess Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have been observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi–O planes normal to the c axis. These structural defects are expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra Bi–O planes having higher strucutral flexibility and alleviating the mechanical stresses and strains as well as injected-charge problems. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects

Langasite for high-temperature bulk acoustic wave applications

H. Fritze and H. L. Tuller

Appl. Phys. Lett. 78, 976 (2001); http://dx.doi.org/10.1063/1.1345797 (2 pages) | Cited 40 times

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Langasite (La3Ga5SiO14) and related compounds are promising candidates for high-temperature piezoelectric applications. To determine the stable operation of langasite as a high-temperature bulk acoustic wave (BAW) resonator, we characterized electrical conductivity [σel = 1.56×exp(−1.07 eV/kT)S/cm] and oxygen diffusivity [DoxT = 5×10−5 exp(−1.45 eV/kT)cm2/s] up to elevated temperatures. Langasite was successfully operated up to 900 °C as a BAW resonator with an average mass sensitivity of about 0.17 μg Hz−1 cm−2. This enables, in principle, high-temperature monitoring of deposition rates and thermogravimetry with high sensitivity. © 2001 American Institute of Physics.
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77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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