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12 Feb 2001

Volume 78, Issue 7, pp. 853-1016

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Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers

Tien-chang Lu, Richard Fu, H. M. Shieh, K. J. Huang, and S. C. Wang

Appl. Phys. Lett. 78, 853 (2001); http://dx.doi.org/10.1063/1.1347019 (3 pages) | Cited 2 times

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A two-wavelength integrated laser diode (TWINLD) with aluminum-free active areas (AAA) has been realized by monolithically combining two different laser material structures in a single chip utilizing the metalorganic chemical vapor deposition growth and regrowth techniques. The single TWINLD chip comprises two ridge wave-guide lasers, one is an InGaP/InGaAlP material structure for a 650 nm red laser, and another is an InGaAsP/AlGaAs material structure with AAA for a 780 nm infrared laser. The chip geometry is 300 μm long and 300 μm wide with a separation of 150 μm between two laser emission spots. The ridge widths are 3.5 and 2 μm for the red and IR laser, respectively, and both lasers emit a single transverse mode with a threshold current of 12 mA for a 650 nm laser and 14 mA for a 780 nm laser under continuous wave operation condition. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology

Direct observation of self-focusing near the diffraction limit in polycrystalline silicon film

Yunjin Choi, June-H. Park, Myong R. Kim, Wonho Jhe, and Bum Ku Rhee

Appl. Phys. Lett. 78, 856 (2001); http://dx.doi.org/10.1063/1.1335845 (3 pages) | Cited 28 times

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We present direct observation of self-focusing near the diffraction limit by measuring the beam-spot size with a scanning fiber probe tip. We have used the polycrystalline silicon film, which exhibits a reverse-saturation (Im χ(3) ≈ 8×10−3 esu) and self-focusing (Re χ(3) ≈ 2×10−2 esu), as measured by the conventional z-scan method with He–Ne laser. It is observed that the beam radius of about its wavelength becomes smaller as the input laser intensity is increased, which indicates that the self-focusing effect dominates over the reverse saturation in the 300-nm-thick sample. © 2001 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Fx Diffraction and scattering

Combined formation of a self-pumped phase-conjugate mirror and spatial subharmonics in photorefractive sillenites

Ervin Nippolainen, Alexei A. Kamshilin, Victor V. Prokofiev, and Timo Jaaskelainen

Appl. Phys. Lett. 78, 859 (2001); http://dx.doi.org/10.1063/1.1344570 (3 pages) | Cited 6 times

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We found that the formation of self-pumped phase-conjugate mirrors (SPPCM) in photorefractive Bi12TiO20 crystals under external alternating electric field is accompanied by strong enhancement of spatial subharmonics. This combined formation of the fundamental grating and its spatial subharmonics results in an expansion of the spatial-frequency band allowed for SPPCM recording. © 2001 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Ln Holographic recording materials; optical storage media
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.40.Eq Holographic optical elements; holographic gratings
42.40.Ht Hologram recording and readout methods

Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers

W. Heiss, T. Schwarzl, G. Springholz, K. Biermann, and K. Reimann

Appl. Phys. Lett. 78, 862 (2001); http://dx.doi.org/10.1063/1.1347404 (3 pages) | Cited 18 times

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Above-room-temperature operation of vertical-cavity surface-emitting lasers emitting in the mid-infrared is reported. The stimulated emission is generated in PbTe quantum wells embedded in two-wavelength microcavities by optically pumping with fs laser pulses. The spectrum of the laser modes is broadened and blue-shifted due to dynamic band filling. The intensity of the mid-infrared emission and the laser threshold depends on the energy of the microcavity resonance. At a wavelength of 3.1 μm, laser operation is obtained up to a temperature of 65 °C, limited by nonradiative recombination processes. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.67.De Quantum wells
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.Fg Quantum wells

Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques

Stephen J. Sweeney, Gareth Knowles, and Terry E. Sale

Appl. Phys. Lett. 78, 865 (2001); http://dx.doi.org/10.1063/1.1342049 (3 pages) | Cited 5 times

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By measuring visible AlGaAs/AlGaInP vertical-cavity surface-emitting lasers (VCSELs) and similar edge-emitting lasers (EELs) as a function of temperature and pressure, we study the contributions of electron leakage and gain-cavity detuning on the threshold current, Ith, of VCSELs. In the EELs, leakage accounts for ∼ 20%Ith at room temperature, rising to ∼ 70%Ith at 80 °C. Similarly, leakage accounts for almost all of the increase in the VCSEL Ith above −100 °C and limits the cw output power. At low temperature or high pressure, however, the VCSEL Ith increases sharply due to misalignment of the gain peak to the high-energy side of the cavity mode. Under normal operating conditions, carrier leakage has the greatest effect on the VCSELs with gain-cavity detuning only becoming important at very low temperatures. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Laser printing of active optical microstructures

G. Koundourakis, C. Rockstuhl, D. Papazoglou, A. Klini, I. Zergioti, N. A. Vainos, and C. Fotakis

Appl. Phys. Lett. 78, 868 (2001); http://dx.doi.org/10.1063/1.1348321 (3 pages) | Cited 5 times

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Optically activated indium oxide diffractive optical microstructures are demonstrated through a two step laser based fabrication method. Nonstoichiometric indium oxide thin film material grown by reactive pulsed laser deposition has been selectively transferred onto glass substrates by ultrashort pulse laser microprinting to form surface relief microstructures. Subsequent ultraviolet illumination has induced dynamic refractive index changes, which result in all optical control of the grating diffraction efficiency. The direct materials transfer process enables reproduction of the structural and physical properties of the oxide. © 2001 American Institute of Physics.
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42.70.-a Optical materials
81.15.Fg Pulsed laser ablation deposition
61.66.Bi Elemental solids
61.66.Dk Alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.62.Cf Industrial applications

Continuous-wave pump-enhanced singly resonant optical parametric oscillator pumped by an extended-cavity diode laser

I. D. Lindsay, C. Petridis, M. H. Dunn, and M. Ebrahimzadeh

Appl. Phys. Lett. 78, 871 (2001); http://dx.doi.org/10.1063/1.1345833 (3 pages) | Cited 8 times

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A continuous-wave pump-enhanced singly resonant optical parametric oscillator (OPO) directly pumped by a grating-stabilized external-cavity diode laser operating at ≈810 nm is described. The OPO was based on periodically poled LiNbO3 and could be tuned over 1.06–1.19 μm at the signal and 2.58–3.44 μm at the idler. The OPO threshold was typically 25–30 mW over the observed tuning range. Up to 4 mW of one-directional idler output was obtained for 62 mW of external-cavity diode laser pump power. The high stability of the external-cavity diode-laser pump source allowed locked, single-mode OPO operation for periods of greater than 1 h. © 2001 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Enhancing type-II optical second-harmonic generation by the use of a laser beam with a rotating azimuth of polarization

A. V. Kir’yanov, V. Aboites, and I. V. Mel’nikov

Appl. Phys. Lett. 78, 874 (2001); http://dx.doi.org/10.1063/1.1342211 (3 pages) | Cited 4 times

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We propose a frequency converter which exploits laser pulses with changing state of polarization. The use of such pulses as a pump source for an extracavity doubling crystal is shown to result in the large conversion efficiency. These pulses can also provide a fairly good tool of monitoring the shape of the harmonic pulse. It is shown that temporal variations of the polarization direction experienced by the pump pulse in this system may cause considerable shortening of the harmonic pulse. © 2001 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.25.Ja Polarization
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