APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Feb 2001

Volume 78, Issue 7, pp. 853-1016

Return to All Sections
back to top
RSS Feeds

Enhanced copper K-alpha radiation from a low-energy plasma focus

M. Zakaullah, K. Alamgir, M. Shafiq, S. M. Hassan, M. Sharif, and A. Waheed

Appl. Phys. Lett. 78, 877 (2001); http://dx.doi.org/10.1063/1.1347008 (3 pages) | Cited 36 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A low-energy (2.3 kJ) plasma focus is operated in an enhanced Cu Kα line emission mode. The emission is dominated by the interaction of electrons in the current sheath with the anode tip. The Cu Kα line radiation of 0.4 J/sr is recorded in the side-on direction, which steadily increases in the end-on direction and attains the value of 0.8 J/sr. It is estimated about 40 J of energy is radiated as x rays, out of which 8 J is in the form of Cu Kα lines in 4π geometry. The radiation yield represents a system efficiency of 1.7% for overall x-ray emission, and 0.35% for the Cu Kα line. © 2001 American Institute of Physics.
Show PACS
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.58.Lq Z-pinches, plasma focus, and other pinch devices
52.59.Hq Dense plasma focus
52.75.-d Plasma devices
52.40.Kh Plasma sheaths
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
52.70.La X-ray and γ-ray measurements

Resonant energy transfer from argon dimers to atomic oxygen in microhollow cathode discharges

M. Moselhy, R. H. Stark, K. H. Schoenbach, and U. Kogelschatz

Appl. Phys. Lett. 78, 880 (2001); http://dx.doi.org/10.1063/1.1336547 (3 pages) | Cited 36 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The emission of atomic oxygen lines at 130.2 and 130.5 nm from a microhollow cathode discharge in argon with oxygen added indicates resonant energy transfer from argon dimers to oxygen atoms. The internal efficiency of the vacuum-ultraviolet (VUV) radiation was measured as 0.7% for a discharge in 1100 Torr argon with 0.1% oxygen added. The direct current VUV point source operates at voltages below 300 V and at current levels of milliamperes. © 2001 American Institute of Physics.
Show PACS
34.50.-s Scattering of atoms and molecules
52.80.Hc Glow; corona
33.20.Lg Ultraviolet spectra
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio

Jun Matsui, Nobuhiko Nakano, Zoran Lj. Petrović, and Toshiaki Makabe

Appl. Phys. Lett. 78, 883 (2001); http://dx.doi.org/10.1063/1.1347021 (3 pages) | Cited 37 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson’s equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion–ion plasma in an afterglow phase. © 2001 American Institute of Physics.
Show PACS
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close