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19 Feb 2001

Volume 78, Issue 8, pp. 1023-1163

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Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Huicai Zhong, Greg Heuss, Veena Misra, Hongfa Luan, Choong-Ho Lee, and Dim-Lee Kwong

Appl. Phys. Lett. 78, 1134 (2001); http://dx.doi.org/10.1063/1.1347402 (3 pages) | Cited 33 times

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The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800 °C in N2. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO2 films was 65.0 μΩ cm after 800 °C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO2 was ∼ 5.1 eV, compatible with PMOS devices. Post-RuO2 gate annealing up to 800 °C, resulted in only a 1.4 Å equivalent oxide thickness (Tox-eq) change and 0.2 V flatband voltage change for Zr silicate and a 4 Å Tox-eq change for ZrO2 dielectrics. Tantalum electrodes were also studied on ZrO2 as a comparison of the stability of RuO2 electrodes. © 2001 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Cd Deposition by sputtering
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
68.60.Dv Thermal stability; thermal effects
84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions

Josephson-junction arrays as high-efficiency sources of coherent millimeter-wave radiation

B. Vasilić, S. V. Shitov, C. J. Lobb, and P. Barbara

Appl. Phys. Lett. 78, 1137 (2001); http://dx.doi.org/10.1063/1.1350431 (3 pages) | Cited 11 times

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Recent experiments have indicated that Josephson-junction arrays can radiate coherently in a laser-like fashion, as predicted by theoretical work in the 1970s. We present results from measurements of high-efficiency Josephson-junction arrays coupled to resonant cavities. In one of our samples with four columns and 36 rows, the dc to ac (180 GHz) conversion efficiency reaches an asymptotic value of about 32%. Using a simple circuit model we show that we have achieved optimal dc to ac conversion in this sample. © 2001 American Institute of Physics.
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85.25.Cp Josephson devices
84.40.-x Radiowave and microwave (including millimeter wave) technology

Single-electron inverter

C. P. Heij, P. Hadley, and J. E. Mooij

Appl. Phys. Lett. 78, 1140 (2001); http://dx.doi.org/10.1063/1.1345822 (3 pages) | Cited 17 times

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A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the inverter must exhibit voltage gain. Voltage gain was achieved by fabricating a combination of parallel-plate gate capacitors and small tunnel junctions in a two-layer circuit. Voltage gain of 2.6 was attained at 25 mK and remained larger than one for temperatures up to 140 mK. The temperature dependence of the gain agrees with the orthodox theory of single-electron tunneling. © 2001 American Institute of Physics.
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85.35.Gv Single electron devices
84.30.Jc Power electronics; power supply circuits
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.35.Ds Quantum interference devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
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