The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800 °C in N2. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO2 films was 65.0 μΩ cm after 800 °C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO2 was ∼ 5.1 eV, compatible with PMOS devices. Post-RuO2 gate annealing up to 800 °C, resulted in only a 1.4 Å equivalent oxide thickness (Tox-eq) change and 0.2 V flatband voltage change for Zr silicate and a 4 Å Tox-eq change for ZrO2 dielectrics. Tantalum electrodes were also studied on ZrO2 as a comparison of the stability of RuO2 electrodes. © 2001 American Institute of Physics.