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19 Feb 2001

Volume 78, Issue 8, pp. 1023-1163

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Temperature dependence of polarization and charge dynamics on the BaTiO3(100) surface by scanning probe microscopy

Sergei V. Kalinin and Dawn A. Bonnell

Appl. Phys. Lett. 78, 1116 (2001); http://dx.doi.org/10.1063/1.1348303 (3 pages) | Cited 36 times

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Variable-temperature atomic force microscopy, piezoresponse force microscopy (PFM), and scanning surface potential microscopy were combined to determine the temperature response of polarization and screening charge on BaTiO3(100) surfaces. The ferroelectric-domain induced surface corrugations and piezoelectric response decrease with temperature and disappear at the Curie temperature. The temperature dependence of the PFM contrast is explained within the framework of the Ginzburg–Devonshire theory with the effect of a dielectric tip-surface gap taken into account. The temperature dependence of the surface potential contrast is ascribed to the interplay between the release of the screening charges with temperature and their slow relaxation. The results indicate that surface potential polarity is reversed relative to that expected from polarization orientation on BaTiO3 in ambient. © 2001 American Institute of Physics.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.37.Ps Atomic force microscopy (AFM)
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation

Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si

Kazumi Kato, Kazuyuki Suzuki, Kaori Nishizawa, and Takeshi Miki

Appl. Phys. Lett. 78, 1119 (2001); http://dx.doi.org/10.1063/1.1349871 (3 pages) | Cited 40 times

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CaBi4Ti4O15 (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 °C and reached full crystallinity of a single phase of layered perovskite at 650 °C via rapid thermal annealing in oxygen. The 650 °C annealed CBTi144 thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (Pr) and coercive electric field (Ec) were 9.4 μC/cm2 and 106 kV/cm, respectively, at 11 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Thickness dependence of ferroelectric polarization switching in poly(vinylidene fluoride–trifluoroethylene) spin cast films

Feng Xia, Haisheng Xu, Fei Fang, B. Razavi, Z.-Y. Cheng, Yu Lu, Baomin Xu, and Q. M. Zhang

Appl. Phys. Lett. 78, 1122 (2001); http://dx.doi.org/10.1063/1.1351848 (3 pages) | Cited 46 times

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In poly(vinylidene fluoride–trifluoroethylene) copolymer spin cast films, it has been observed that the polarization switching time increases as the film thickness is reduced to below 1 μm. We will show that this change with film thickness can be divided into two thickness regimes, i.e., those above 120–150 nm and those below that thickness. For films thicker than 120–150 nm, the change in the switching behavior is due to interface effects that can be modeled by an effective interface layer with lower dielectric constant that is in series with the film. For films below 120–150 nm thickness, there is an additional and very large increase of the switching time with reduced film thickness. This additional effect is caused by the precipitous drop of the crystallinity in films at this thickness range. © 2001 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
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