APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Feb 2001

Volume 78, Issue 8, pp. 1023-1163

Return to All Sections
back to top
RSS Feeds

Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films

Y. T. Tan, T. Kamiya, Z. A. K. Durrani, and H. Ahmed

Appl. Phys. Lett. 78, 1083 (2001); http://dx.doi.org/10.1063/1.1350428 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-electron effects have been observed up to 60 K in a side-gated point contact device fabricated in nanocrystalline silicon films. The films were phosphorus-doped and deposited at 300 °C by plasma enhanced chemical vapor deposition. Using transmission electron microscopy and Raman spectroscopy, the grain size, crystalline volume fraction, and grain boundary thickness are determined. The single-electron effects are associated with islands formed by crystalline silicon grains ∼4 nm in size, isolated by amorphous silicon regions ∼0.5 nm in thickness. The structural characteristics of the nc-Si film are correlated to the electrical behavior. The electrical transport mechanism at high temperatures is attributed to percolation conduction across a distribution of tunnel barriers with a maximum height of 40 meV. © 2001 American Institute of Physics.
Show PACS
85.30.Hi Surface barrier, boundary, and point contact devices
73.61.Cw Elemental semiconductors
73.23.-b Electronic transport in mesoscopic systems
81.05.Cy Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Am Elemental semiconductors and insulators

Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates

S. Ono, M. Takeuchi, and T. Takahashi

Appl. Phys. Lett. 78, 1086 (2001); http://dx.doi.org/10.1063/1.1348318 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface potential measurements on InAs thin films grown on GaAs giant steps were performed by Kelvin probe force microscopy. We found that the removal of the water-related layer from both surfaces on a sample and a tip was very effective to improve the reliability of the surface potential measurements. The measured potential distribution corresponds to the surface corrugation of the InAs thin films. In addition, the InAs layer thickness dependence of the surface InAs Fermi levels is investigated, indicating that the surface Fermi level shifts toward the vacuum level as the increase of the InAs layer thickness. © 2001 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)

Absorption of nonequilibrium acoustic phonons by low-mobility electrons in GaN

N. M. Stanton, A. V. Akimov, A. J. Kent, T. S. Cheng, and C. T. Foxon

Appl. Phys. Lett. 78, 1089 (2001); http://dx.doi.org/10.1063/1.1349869 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report direct phonon absorption experiments in n-type GaN epitaxial layers grown by molecular beam epitaxy. Nonequilibrium phonons with characteristic energies up to 15 meV (3.5 THz) are injected from a constantan heater. They propagate ballistically through the sapphire substrate, reach the GaN layer, and are absorbed by the degenerate three-dimensional electron gas. The phonon absorption is studied as a function of heater temperature through the effects of phonon induced changes of the device resistivity. The experimental results lead us to the conclusion that in low-mobility GaN, the momentum conservation cutoff for electron-phonon transitions is shifted to higher energy than predicted by standard theory. © 2001 American Institute of Physics.
Show PACS
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions

Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates

R. K. Ahrenkiel, S. W. Johnston, J. D. Webb, L. M. Gedvilas, J. J. Carapella, and M. W. Wanlass

Appl. Phys. Lett. 78, 1092 (2001); http://dx.doi.org/10.1063/1.1350432 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High-quality, thin-film, lattice-matched (LM) InAsyP1−y/InxGa1−xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1−xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1−y/InxGa1−xAs DH system attractive for applications in high-performance, infrared-sensitive devices. © 2001 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
78.55.Cr III-V semiconductors
73.25.+i Surface conductivity and carrier phenomena
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close